Abstract: Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. A gas mixture containing a fluorine source and an oxygen source is pre-treated to contain active fluorine species. The pre-treated mixture is stored for a time in a gas storage device, and then introduced to a semiconductor processing chamber. Prior to introduction of the pre-treated gas, the temperature in the chamber is lowered to a temperature equal to or lower than the normal operating temperature. Undesired substances are removed or cleaned through chemical reaction with the pre-treated gas mixture, without the generation of a plasma or a high temperature condition in the chamber.

Abstract: Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. A gas mixture containing a fluorine source and an oxygen source is pre-treated to contain active fluorine species. The pre-treated mixture is stored for a time in a gas storage device, and then introduced to a semiconductor processing chamber. Prior to introduction of the pre-treated gas, the temperature in the chamber is lowered to a temperature equal to or lower than the normal operating temperature. Undesired substances are removed or cleaned through chemical reaction with the pre-treated gas mixture, without the generation of a plasma or a high temperature condition in the chamber.

Abstract: To provide an efficient method for cleaning film-forming apparatuses in order to remove a ruthenium-type deposit residing on a constituent member of a film-forming apparatus after said apparatus has been used to form a film comprising ruthenium or solid ruthenium oxide, wherein at least the surface region of the ruthenium-type deposit comprises solid ruthenium oxide. A ruthenium-type deposit, at least the surface region of which is solid ruthenium oxide, is brought into contact with reducing gas that contains a reducing species comprising hydrogen or hydrogen radical and the solid ruthenium oxide is thereby converted into ruthenium metal. This ruthenium metal is subsequently converted into volatile ruthenium oxide by bringing the ruthenium metal into contact with an oxidizing gas that contains an oxidizing species comprising an oxygenated compound, and this volatile ruthenium oxide is removed from the film-forming apparatus.

Abstract: A method and device for the preparation of a gas or mixture of gases containing molecular fluorine from a gas or mixture of gases derived from fluorine, wherein the fluorinated gas or mixture of gases, particularly nitrogen trifluoride NF2, is decomposed by cracking in a plasma of molecules of fluorinated gases in order to produce a mixture of atomic fluorine and other species resulting form said cracking, whereupon said mixture is subsequently cooled in a rapid manner (24), if necessary at a temperature of less than 500° C., in order to result in the formation of molecular fluorine of rat least 50% atomic fluorine thus formed and to minimize the recombination of fluorine atoms with other products arising from said cracking and to reform a fluorinated gas or mixture of gases, wherein the gaseous mixture containing F2 is recovered.

Abstract: Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removing at least one chemical precursor from a semiconductor fabrication system comprises forcing a solvent containing at least one alkylsilane through the semiconductor fabrication system and dissolving the at least one chemical precursor in the solvent. The solvent may also contain mixtures of different alkylsilanes and other organic solvents.

Abstract: Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.

Abstract: To provide a CVD-based method for the relatively low temperature production of silicon nitride films and silicon oxynitride films that exhibit excellent film properties wherein said method is not accompanied by the production of ammonium chloride. Gaseous aminosilane such as tris(isopropylamino)silane and a gaseous hydrazine compound such as dimethylhydrazine are fed into a chemical vapor deposition reaction chamber that holds at least one substrate and silicon nitride film is formed on the substrate by reacting the two gases in said chemical vapor deposition reaction chamber.

Abstract: Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that contains a substrate (112). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber (11). This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

Abstract: Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

Abstract: A device and method are provided for starting the engine of a motor vehicle equipped with an authentification device, which includes an access entitlement unit that the user can carry and a vehicle-side access entitlement test device having a receptacle for the access entitlement unit, and with a tripping unit, which includes a tripping element that when activated can initiate an engine start. The tripping element and the receptacle are connected mechanically together such that the tripping element is actuatable by an essentially translatory movement of the access entitlement unit inserted into the receptacle.

Abstract: Methods for the production of silicon nitride films by vapor-phase growth. A hydrazine gas and at least one precursor gas are fed into a reaction chamber containing a substrate. The precursor gas is either a trisilylamine gas or a silylhydrazine gas. A silicone nitride film is formed through the reaction of the hydrazine gas and the precursor gas.

Abstract: A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3??(I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.

Abstract: Liquid precursor refill systems of the type typically used in the semiconductor industry. A remote precursor reservoir and a secondary vapor delivery system provide a CVD precursor to a local source. The local source contains a heat transfer means and a local CVD precursor reservoir. A delivery line connects this remote, secondary vapor delivery system and the local heat transfer means. During the constant or periodic operation, no liquid is present in the delivery line. The local CVD precursor reservoir may serve as an ampoule in a bubbler system, or may provide CVD precursor to an ampoule in a bubbler system.

Abstract: A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3??(I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.

Abstract: A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3??(I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.

Abstract: A method for producing silicon nitride and silicon oxynitride films by CVD technology, where even at lower temperatures, acceptable film-deposition rates are achieved, without the by-product production of large amounts of ammonium chloride.

Abstract: (Problem) To provide a source liquid supply apparatus that avoids leaving source liquid- and/or cleaning fluid-derived residues in the vicinity of the joint or connection region between the source liquid feed conduit and the source tank. (Solution) A flow-switching mechanism Vc is attached to the source tank 22 of a source liquid supply apparatus 20. This flow-switching mechanism Vc has a first port 33 that is connected to the discharge port conduit 24 of the source tank 22, a second port 34 that is connected to a feed conduit 16, and a third port 35 that is connected to an exhaust conduit 25. The first port 33 can be closed by a valve member 43 on a diaphragm 42 disposed within a common compartment 38 while communication is maintained between the second and third ports 34 and 35. A cleaning fluid source 55 and a purge gas source 57 are connected to the feed conduit 16.

Abstract: A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3??(I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.

Abstract: Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that contains a substrate (112). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber (11). This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

Abstract: Systems and methods of purifying a silicon-containing material include the step of directing the silicon-containing material in a liquid state through an adsorption unit including an adsorbent material to facilitate adsorption of at least one component from the silicon-containing material. Alternatively, the silicon-containing material is directed, in liquid state and/or gaseous state, through two or more purification units, including an adsorption unit, a vaporization unit, a filter unit and a condenser. The silicon-containing material can be a low-k silicon-containing material such as trimethylsilane, tetramethylsilane, dimethyldimethoxysilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, dimethylphenyl silane, and dimethyldivinyl silane.