Abstract: Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Abstract: Methods of depositing Co-containing layers on substrates are disclosed. The vapor of a Co-containing film forming composition is introduced into a reactor having a substrate disposed therein. The Co-containing film forming compositions comprise a silylamide-containing precursor selected from Co[N(SiMe3)2]2(NMe2Et), Co[N(SiMe3)2]2(NMeEt2), or combinations thereof. At least part of the silylamide-containing precursor is deposited onto the substrate to form the Co-containing layer using a vapor deposition method.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4-[(ER2)2—NR]—, wherein M is Ti, Zr, or Hf bonded in an ?5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C1-C4 hydrocarbon group; and each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group and adjacent R's may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is C1 to C4. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; o+p>1; each R is independently hydrogen or or a C1-C4 hydrocarbon group; each L is independently a?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and each L? is independently NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Abstract: Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2—M-C5R4-[(CER2)m-(CER2)n—O]-, wherein M is Ti, Zr, or Hf bonded in an ?5 bonding mode to the cyclopentadienyl group; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a hydrogen or a C1—C4 hydrocarbon group; each L is independently a -1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is H or a C1—C4 hydrocarbon group; and adjacent R?s may be joined to form a hydrocarbyl ring. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on the substrates via vapor deposition processes.

Abstract: Disclosed are Hafnium-containing film forming compositions comprising Germanium- and Hafnium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing films on substrates via vapor deposition processes.

Abstract: Disclosed are Hafnium-containing film forming compositions comprising Silicon- and Hafnium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, Fe, R9 and R19 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing thin films on substrates via vapor deposition processes.

Abstract: Vapor deposition methods of cobalt-containing films by using cobalt carbonyl nitrosyl are disclosed.

Abstract: Disclosed are methods of selectively synthesizing inorganic silanes, such as halosilane and dihalosilane, comprising the step of reacting the halide or halogen (i.e., HX or X2 wherein X is Cl, Br, or I) with RSiH3, wherein R is an unsaturated C4 to C8 cyclic hydrocarbon or heterocycle group, provided that a C6 cyclic aromatic includes at least one hydrocarbyl ligand, in the presence of a catalyst, to produce RH and the inorganic silane having the formula SixHaXb, wherein x=1-4; a=1-9; b=1-9; and a+b=2x+2.

Abstract: Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via de-hydrogenative coupling between the corresponding unsubstituted tnsilylames and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a Si—H and a N—H moety to form an Si—N containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—N containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.

Abstract: Manganese-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The manganese-containing film forming compositions comprise silylamide-containing precursors, particularly {Mn[N(SiMe2Et)2]2}2.

Abstract: Vapor deposition methods of cobalt-containing films by using cobalt carbonyl nitrosyl are disclosed.

Abstract: Cobalt-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The cobalt-containing film forming compositions comprise silylamide-containing precursors, particularly Co[N(SiMe3)2]2(NMe2Et) and/or Co[N(SiMe3)2]2(NMeEt2).

Abstract: Disclosed are Si-containing film forming compositions, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed Si-containing film forming composition comprising an amino(bromo)silane precursor having the formula: SiHxBry(NR1R2)4-x-y wherein x=0, 1 or 2; y=1, 2 or 3; x+y<4; each R1 and R2 is independently selected from C1-C6 alkyl, aryl, or hetero group; and R1 and R2 may be joined to form a cyclic nitrogen-containing heterocycle. The disclosed Si-containing film forming compositions includes an amino(bromo)silane precursor selected from the group consisting of SiH2Br(NEt2), SiH2Br(N(iPr)2), SiH2Br(N(iBu)2) and SiBr(NMe2)3.

Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract: The disclosure relates in particular to the processing of commands targeting at least one element of a cluster including a plurality of elements, the at least one element having a link of dependency according to the at least one command with at least one other element. After having identified the at least one element and at least one dependency rule from the at least one command, a dependency graph is generated from the at least one identified element, by applying the at least one identified dependency rule, the dependency graph including peaks representing at least the element and the at least one other element, an action linked with the at least one command being associated with the peaks of the dependency graph. A sequence of instructions is then generated from the dependency graph.