Abstract: Provided is a vessel having internally wettable surfaces therein coated with one or more barrier layers to, for example, inhibit contamination of a material, such as a metal halide, contained in the vessel.

Abstract: Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R1, R2, R3, R4 and R5 is independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R1?R2 and/or R3 when R1 and R2 and R3 are a hydrocarbon group; (b) R1 and R2 are a hydrocarbon group when R3 is H; or (c) R1 is a C2-C4 hydrocarbon group when R2 and R3 are H.

Abstract: Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Abstract: Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH4)3—X, Ti(AlH4)2L and Ti(AlH4)L2. The disclosed precursors may be used to deposit pure titanium-aluminum (TiAl), titanium-aluminum nitride (TiAlN), titanium-aluminum carbide (TiAlC), titanium-aluminum carbonitride (TiAlCN), titanium-aluminum silicide ((TiAl)Si), titanium-aluminum siliconitride ((TiAl)SiN), titanium-aluminum boron ((TiAl)B), titanium-aluminum boron nitride ((TiAl)BN), or titanium-aluminum oxide (TiAlO). or any other titanium-aluminum-containing films. The titanium-aluminum-containing films may be deposited using the disclosed precursors in thermal and/or plasma-enhanced CVD, ALD, pulse CVD or any other type of depositions methods.

Abstract: Si(OEt)2[CH2—Si(OEt)3]2 compounds are synthesized by reacting a Grignard reagent having the formula Si(OEt)3(CH2MgCl) with a quenching agent having the formula Si(OEt)2Cl2.

Abstract: A SiH[CH2—Si(OEt)3]3 carbosilane compound is synthesized by reacting a Grignard reagent having the formula Si(OEt)3(CH2MgCl) with a quenching agent having the formula SiHCl3.

Abstract: Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.

Abstract: A method and apparatus for the processing of at least one command concerning at least one component of a cluster is disclosed. The cluster comprises several components, the at least one component having a dependency link, according to the at least one command, with at least one other component, is disclosed.

Abstract: The disclosure relates in particular to the processing of commands targeting at least one element of a cluster including a plurality of elements, the at least one element having a link of dependency according to the at least one command with at least one other element. After having identified the at least one element and at least one dependency rule from the at least one command, a dependency graph is generated from the at least one identified element, by applying the at least one identified dependency rule, the dependency graph including peaks representing at least the element and the at least one other element, an action linked with the at least one command being associated with the peaks of the dependency graph. A sequence of instructions is then generated from the dependency graph.

Abstract: The present invention provides molecules useful for aluminum implant in semiconductor materials. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.

Abstract: (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.

Abstract: The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.

Abstract: Disclosed are stabilized bicyclo[2.2.1]hepta-2,5-diene compositions and methods of making and using the same.

Abstract: A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me5Cp)(OR)3 (I), wherein R is selected in the group consisting in methyl, ethyl, isopropyl; or of the formula Ti(R1Cp)(OR2)3 (II), wherein R1 is selected from the group consisting in H, methyl, ethyl, isopropyl and R2 is independently selected from the group consisting in methyl, ethyl, isopropyl or tert-butyl; b) reacting the vapor comprising the at least one compound of formula (I) or (II) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.

Abstract: Disclosed are stabilized bicyclo[2.2.1]hepta-2,5-diene compositions and methods of making and using the same.

Abstract: The present invention relates to a method for distributing products, in particular pyrophoric, from a storage point to a use point. According to the invention, an inert gas is bubbled through the product, in particular pyrophoric, to be purified in the liquid state in order to generate a mixture, the mixture is preferably routed close to the use point, the product, in particular pyrophoric, is separated from the inert gas and from some light impurities, to generate a purified final product, in particular pyrophoric, in liquid or solid form. The purified product is supplied in a quantity just necessary to the use point, particularly when it is solidified in the heat exchanger after the transport of the mixture.

Abstract: A device and method are provided for starting the engine of a motor vehicle equipped with an authentification device, which includes an access entitlement unit that the user can carry and a vehicle-side access entitlement test device having a receptacle for the access entitlement unit, and with a tripping unit, which includes a tripping element that when activated can initiate an engine start. The tripping element and the receptacle are connected mechanically together such that the tripping element is actuatable by an essentially translatory movement of the access entitlement unit inserted into the receptacle.

Abstract: A source liquid supply apparatus and method that avoids leaving source liquid-and/or cleaning fluid-derived residues in the vicinity of the connection region between the source liquid feed conduit and the source tank. A flow-switching mechanism is attached to the source tank of a source liquid supply apparatus. This flow-switching mechanism has a first port connected to the discharge port conduit of the source tank, a second port connected to a feed conduit, and a third port connected to an exhaust conduit. The first port can be closed by a valve member on a diaphragm disposed within a common compartment while communication is maintained between the second and third ports. A cleaning fluid source and a purge gas source are connected to the feed conduit. Purge gas and cleaning fluid fed into the feed conduit are discharged from the second and third ports and through the exhaust conduit.

Abstract: Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.

Abstract: (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.