Abstract: An electronic environmental sensor tag includes microsensor elements using magnetic logic devices adapted to detect target chemical and/or target environmental conditions. The microsensor elements operate only periodically to save power, and also include non-volatile memories and communications circuits to allow interrogation and detection of a target condition. The microsensor element state is detected and then processed to identify a detected value for the target chemical. The detected value can be communicated by an antenna element to a separate reader device.

Abstract: An electronic environmental sensor tag includes microsensor elements using magnetic logic devices adapted to detect target chemical and/or target environmental conditions. The microsensor elements operate only periodically to save power, and also include non-volatile memories and communications circuits to allow interrogation and detection of a target condition.

Abstract: A chemical detection system includes microsensor elements adapted to detect target chemical and/or target environmental conditions. The microsensor elements can be fabricated on a single semiconductor chip, and include carbon nanotubes, magnetoelectronic processing components, non-volatile memory, and micromechanical structures for controlling an expression of a readout substance.

Abstract: A coated article includes microsensor elements incorporated on a surface or embedded in a body, which elements are adapted to detect target chemical and/or target environmental conditions. The microsensor elements can be applied with liquid and dry mixtures, including compounds of inks, dyes, print powders, aerosols and other suspensions.

Abstract: A chemical detection mixture includes microsensor elements adapted to detect target chemical and/or target environmental conditions. The microsensor elements can be incorporated within liquid and dry mixtures, including compounds of inks, dyes, print powders, aerosols and other suspensions.

Abstract: Resistance elements, including Magnetic Tunnel Junction devices are configured as magnetoelectronic (ME) devices. These resistive devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.

Abstract: Resistance elements, including Magnetic Tunnel Junction devices are configured as magnetoelectronic (ME) devices. These resistive devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.

Abstract: Resistance elements, including Magnetic Tunnel Junction devices are configured as magnetoelectronic (ME) devices. These resistive devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.

Abstract: Resistance elements, including Magnetic Tunnel Junction devices are configured as magnetoelectronic (ME) devices. These resistive devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.

Abstract: Magnetoelectronic circuits include Hybrid Hall Effect devices implemented with Spin Transfer Torque write capability. The circuits include reconfigurable processing systems, logic circuits, non-volatile switches, memory cells, etc.

Abstract: Hybrid Hall Effect Devices implemented with Spin Transfer Torque write capability are configured as magnetoelectronic (ME) devices. These devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.

Abstract: Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed for use in energy constrained applications in which logic operations are carried out using a minimal number of physical operations. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc. including in clockless applications.

Abstract: A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.

Abstract: Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed for use in energy constrained applications in which logic operations are carried out using a minimal number of physical operations. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc. including in clockless applications.

Abstract: A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.

Abstract: Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc.

Abstract: Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc.

Abstract: Magnetoelectronic devices are fabricated by joining the edge of one ferromagnetic thin film element with the top, or bottom, portion of a second ferromagnetic, or nonmagnetic, thin film element. The devices also employ a new operational geometry in which the transport of bias current is in the film plane of at least one of the thin film elements, but is substantially perpendicular to the film plane of at least one of the thin film elements. Additionally, any of the variety magnetoelectronic devices (e.g., current-in-plane spin valves, current-perpendicular-to-the-plane spin valves, magnetic tunnel junctions, and lateral spin valves can be fabricated using these features.

Abstract: An electron spin-based memory cell has a first ferromagnetic layer with a changeable magnetization state and a second ferromagnetic layer with a fixed magnetization state. A non-volatile logic state of such cell is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel. To facilitate writing, the cell is adapted carry at least a portion of a write pulse.