Abstract: Magnetic field sensors, each generating an electrical output signal in proportion to the local magnetic field, are lithographically fabricated on a semiconductor substrate with a small spatial separation. The lateral dimension of the sensors and the separation length are the order of the minimum lithographic feature size. Comparing the electrical signals of the sensors results in a measurement of the local magnetic field gradient. Large field gradients, that vary on a small spatial scale, may be associated small magnetic structures such as microscopic magnetic particles. Detection of a field gradient can be used to infer the presence of a magnetic particle.

Abstract: Magnetic field sensors, each generating an electrical output signal in proportion to the local magnetic field, are lithographically fabricated on a semiconductor substrate with a small spatial separation. The lateral dimension of the sensors and the separation length are the order of the minimum lithographic feature size. Comparing the electrical signals of the sensors results in a measurement of the local magnetic field gradient. Large field gradients, that vary on a small spatial scale, may be associated small magnetic structures such as microscopic magnetic particles. Detection of a field gradient can be used to infer the presence of a magnetic particle.

Abstract: A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element and one or two semiconductor FET isolation elements. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substrate and includes a first ferromagnetic layer with a changeable magnetization state, and a second ferromagnetic layer with a non-changeable magnetization state. A current of spin polarized electrons has a magnitude which can be varied so that a data value can be stored in the memory element by varying a relative orientation of the two ferromagnetic layers.

Abstract: A modified hybrid Hall effect device is provided which is the combination of a conventional Hall effect device and a second Hall effect device having a Hall plate coupled to a ferromagnetic layer. The hybrid Hall effect device can be used to determine the independent magnetic field vector components comprising a vector magnetic field, such as for determining the x and the z components of a magnetic field, or for measuring the total magnitude of a vector magnetic field of any orientation. The modified Hall Effect device can be adapted for use as a magnetic field sensor for the detection of macroscopic objects that have associated magnetic fields, or for microscopic objects that have been tagged by microscopic magnetic particles. In one specific form, a plurality of hybrid Hall devices are electrically connected together to form an array in which a plurality of rows of hybrid Hall devices are electrically coupled to each other along a current axis, and the array is used for the detection of microscopic objects.

Abstract: A method of operating a spin based memory cell stacked architecture is provided. The cells are comprised of magnetic spin storage elements stacked on top of each other on a silicon substrate, as well as one or two semiconductor FET isolation elements.

Abstract: A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element which is written using inductive write lines. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substrate and includes a first ferromagnetic layer with a changeable magnetization state, and a second ferromagnetic layer with a non-changeable magnetization state. A current of spin polarized electrons has a magnitude which can be varied so that a data value can be stored in the memory element by varying a relative orientation of the two ferromagnetic layers using a magnetic field imposed by the inductive write lines.

Abstract: A hybrid magnetic-semiconductor structure can be used as a magnetic field sensor. The hybrid device uses ferromagnetic materials for implementing a variable spin resistance. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.

Abstract: The magnetization state of a ferromagnetic layer can be set to correspond to different values of a data item to be stored in a hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The write circuit uses a pair of inductively coupled write wires in each row and column, which are each given a signal with an amplitude approximately ½ of that required to change the state of the ferromagnetic layer.

Abstract: Ferromagnetic elements for use with spin memories, logic devices and processing circuits include a geometry incorporating an asymmetry about one axis and in some instances one or more curved sections. Magnetic memory elements can be set out in an array such that convex and concave portions are also optimally arranged about magnetization axes.

Abstract: A nonvolatile hybrid memory cell is provided which includes magnetic and semiconductor components. The cell uses a thin film stack of ferromagnetic layers situated over a silicon substrate to store data in the form of variable impedance to a spin polarized current. The cell data is isolated by semiconductor isolation elements.

Abstract: A new magnetic spin device can be used as a memory element or logic gate, such as an OR, AND, NOT, NOR and NAND gate. The state of the magnetic spin device is set inductively. A magnetic spin transistor/gate can be operated with current gain. Furthermore, inductive coupling permits the linking of multiple spin transistors and spin transistor gates to perform combinational tasks. A half adder embodiment is specifically described, and other logic gates and combinations of half adders can be constructed to perform arithmetic functions as part of a microprocessor.

Abstract: A modified hybrid Hall effect device is provided which is the combination of a conventional Hall effect device and a second Hall effect device having a Hall plate coupled to a ferromagnetic layer. The hybrid Hall effect device can be used to determine the independent magnetic field vector components comprising a vector magnetic field, such as for determining the {circumflex over (x)} and the {circumflex over (z)} components of a magnetic field, or for measuring the total magnitude of a vector magnetic field of any orientation. The modified Hall Effect device can be adapted for use as a magnetic field sensor for the detection of macroscopic objects that have associated magnetic fields, or for microscopic objects that have been tagged by microscopic magnetic particles.

Abstract: The magnetization state of a ferromagnetic layer can be set to correspond to different values of a data item to be stored in a hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The write circuit uses a pair of inductively coupled write wires in each row and column, which are each given a signal with an amplitude approximately ½ of that required to change the state of the ferromagnetic layer.

Abstract: A hybrid magnetic—semiconductor structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or a magnetic field sensor. The hybrid device uses ferromagnetic materials for implementing a variable spin resistance. The ferromagnetic layers are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the “on” state the device has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic layers. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.

Abstract: A new nonvolatile hybrid memory cell stacked architecture is provided. The cells are comprised of magnetic spin storage elements stacked on top of each other on a silicon substrate, as well as one or two semiconductor FET isolation elements.

Abstract: Hall Effect devices, memory devices, and Hall Effect device readout voltage increasing method. A hall effect device includes a conductive film layer capable an electrical current, a ferromagnetic layer having a configurable orientation and configured to cover a portion of the conductive film layer such that fringe magnetic fields can be generated by an edge portion of the ferromagnetic layer, a high permeability magnetic layer disposed below the conductive film layer. The fringe magnetic fields are drawn toward the high permeability magnetic layer such that the magnetic fields pass though the conductive film layer to enable closure of the magnetic fields.

Abstract: A modified hybrid Hall effect device is provided which is the combination of a conventional Hall effect device and a second Hall effect device having a Hall plate coupled to a ferromagnetic layer. The hybrid Hall effect device can be used to determine the independent magnetic field vector components comprising a vector magnetic field, such as for determining the {circumflex over (x)} and the {circumflex over (z)} components of a magnetic field, or for measuring the total magnitude of a vector magnetic field of any orientation. The modified Hall Effect device can be adapted for use as a magnetic field sensor for the detection of macroscopic objects that have associated magnetic fields, or for microscopic objects that have been tagged by microscopic magnetic particles.

Abstract: A hybrid magnetic-semiconductor structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or a magnetic field sensor. The hybrid device uses ferromagnetic materials for implementing a variable spin resistance. The ferromagnetic layers are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the “on” state the device has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic layers. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.

Abstract: A hybrid memory device combines a ferromagnetic layer and a Hall Effect device. The ferromagnetic layer is magnetically coupled to a portion of a Hall plate, and when such plate is appropriately biased, a Hall Effect signal can be generated whose value is directly related to the magnetization state of the ferromagnetic layer. The magnetization state of the ferromagnetic layer can be set to correspond to different values of a data item to be stored in the hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The memory device can also be fabricated to include an associated transistor (or other suitable switch) that functions as an isolation element to reduce cross-talk and as a selector for the output of the device when such is used in a memory array.

Abstract: A new magnetic spin device can be used as a memory element or logic gate, such as an OR, AND, NOT, NOR and NAND gate. The state of the magnetic spin device is set inductively. A magnetic spin transistor/gate can be operated with current gain. Furthermore, inductive coupling permits the linking of multiple spin transistors and spin transistor gates to perform combinational tasks. A half adder embodiment is specifically described, and other logic gates and combinations of half adders can be constructed to perform arithmetic functions as part of a microprocessor.