Abstract: A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.

Abstract: Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed for use in energy constrained applications in which logic operations are carried out using a minimal number of physical operations. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc. including in clockless applications.

Abstract: A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.

Abstract: Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc.

Abstract: Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc.

Abstract: A photonic/plasmonic device is disclosed that uses a ferroelectric material and its magnetization state in order to affect the physical properties of electromagnetic waves. The magnetization state of the ferromagnetic material may either be zero or nonzero. When the magnetization state of the ferromagnetic material is non-zero physical properties of the electromagnetic waves are altered. This effect can be used to make switches and the like.

Abstract: Magnetoelectronic devices are fabricated by joining the edge of one ferromagnetic thin film element with the top, or bottom, portion of a second ferromagnetic, or nonmagnetic, thin film element. The devices also employ a new operational geometry in which the transport of bias current is in the film plane of at least one of the thin film elements, but is substantially perpendicular to the film plane of at least one of the thin film elements. Additionally, any of the variety magnetoelectronic devices (e.g., current-in-plane spin valves, current-perpendicular-to-the-plane spin valves, magnetic tunnel junctions, and lateral spin valves can be fabricated using these features.

Abstract: A photonic/plasmonic device is disclosed that uses a ferroelectric material and its magnetization state in order to affect the physical properties of electromagnetic waves. The magnetization state of the ferromagnetic material may either be zero or nonzero. When the magnetization state of the ferromagnetic material is non-zero physical properties of the electromagnetic waves are altered. This effect can be used to make switches and the like.

Abstract: Magnetoelectronic devices are fabricated by joining the edge of one ferromagnetic thin film element with the top, or bottom, portion of a second ferromagnetic, or nonmagnetic, thin film element. The devices also employ a new operational geometry in which the transport of bias current is in the film plane of at least one of the thin film elements, but is substantially perpendicular to the film plane of at least one of the thin film elements. Additionally, any of the variety magnetoelectronic devices (e.g., current-in-plane spin valves, current-perpendicular-to-the-plane spin valves, magnetic tunnel junctions, and lateral spin valves can be fabricated using these features.

Abstract: An electron spin-based memory cell has a first ferromagnetic layer with a changeable magnetization state and a second ferromagnetic layer with a fixed magnetization state. A non-volatile logic state of such cell is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel. To facilitate writing, the cell is adapted carry at least a portion of a write pulse.

Abstract: A multi-state spin based memory cell uses a pair of ferromagnetic layers. A first ferromagnetic layer can be set to any known state k from a set of n different states by adjusting a magnetic orientation of such layer. The relationship of the first ferromagnetic layer and a second magnetic layer can thus correspond to a value of a data item in a non-volatile multi-bit memory cell.

Abstract: A nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element and one or two semiconductor FET isolation elements. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substrate and includes a first ferromagnetic layer with a changeable magnetization state, and a second ferromagnetic layer with a non-changeable magnetization state. A current of spin polarized electrons has a magnitude which can be varied so that a data value can be stored in the memory element by varying a relative orientation of the two ferromagnetic layer. An output of the device is coupled to a conventional CMOS amplifier to determine such relationship.

Abstract: A thin film sensing device operates based on a spin polarized current. The spin device includes ferromagnetic layers characterized by different coercivities and/or magnetization states, and one or more low transmission barriers in between. The device is further configured so that the spin polarized current flows at least in part in a direction perpendicular to the aforementioned layers.

Abstract: A spin based device can be used as a magnetic field sensor. The device uses ferromagnetic materials for implementing a variable spin resistance to a spin injected current having a particular spin value. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to an electron current of a particular spin orientation.

Abstract: Magnetic field sensors, each generating an electrical output signal in proportion to the local magnetic field, are lithographically fabricated on a semiconductor substrate with a small spatial separation. The lateral dimension of the sensors and the separation length are the order of the minimum lithographic feature size. Comparing the electrical signals to the sensors results in a measurement of the local magnetic field gradient. Large field gradients, that vary on a small spatial scale, may be associated small magnetic structures such as microscopic magnetic particles. Detection of a field gradient can be used to infer the presence of a magnetic particle.

Abstract: An electron spin-based device includes ferromagnetic layers with different coercivities, such that one of such layers is responsive to a magnetic field and the other is fixed. A value of an impedance in the spin based device for a spin polarized current varies in accordance with a relationship between a first changeable magnetization state and a second non-changeable magnetization state associated with such ferromagnetic layers.

Abstract: Ferromagnetic materials for use with spin memory and logic devices include a geometry and composition adapted to increase spin injection efficiency and/or reduce fringe fields. The ferromagnetic materials can be oriented to implement a variable spin resistance. The ferromagnetic layers are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the “on” state the device has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic layers. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.

Abstract: Magnetic spin devices can be used as a memory element or logic gate. When connected in a circuit configuration, different spin devices can be written to in any number of different ways, such as with different device coercivities, different sets of write lines, different signal amplitudes, different read/write line orientations, etc.

Abstract: A spin based electronic device can be used as a magnetic field sensor. The device uses ferromagnetic materials for implementing a variable spin resistance. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.