Patents by Inventor Mark D. Jaffe
Mark D. Jaffe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10964840Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.Type: GrantFiled: August 27, 2019Date of Patent: March 30, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
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Patent number: 10896992Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.Type: GrantFiled: August 5, 2019Date of Patent: January 19, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
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Patent number: 10790190Abstract: A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer. A trench that extends through the device layer and partially through the buried insulator layer is formed. An electrically-conducting connection is formed in the trench.Type: GrantFiled: May 7, 2019Date of Patent: September 29, 2020Assignee: ELPIS TECHNOLOGIES INC.Inventors: Jeffrey P. Gambino, Mark D. Jaffe, Steven M. Shank, Anthony K. Stamper
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Patent number: 10712498Abstract: Methods and structures for shielding optical waveguides are provided. A method includes forming a first optical waveguide core and forming a second optical waveguide core adjacent to the first optical waveguide core. The method also includes forming an insulator layer over the first optical waveguide core and the second optical waveguide core. The method further includes forming a shielding structure in the insulator layer between the first optical waveguide core and the second optical waveguide core.Type: GrantFiled: December 11, 2018Date of Patent: July 14, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson, Jed H. Rankin
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Patent number: 10692753Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.Type: GrantFiled: January 4, 2019Date of Patent: June 23, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mark D. Jaffe, Alvin J. Joseph, Qizhi Liu, Anthony K. Stamper
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Patent number: 10629482Abstract: A device structure is formed using a silicon-on-insulator substrate. The device structure includes a first switch and a second switch that are formed within a device layer of the silicon-on-insulator substrate and between a buried insulator layer of the silicon on-insulator substrate and a dielectric layer disposed above and coupled to the device layer. An electrically-conducting connection is located in a first trench extending from the device layer through the buried insulator layer to a trap-rich layer such that the electrically-conducting connection is coupled with a substrate.Type: GrantFiled: May 31, 2018Date of Patent: April 21, 2020Assignee: International Business Machines CorporationInventors: Jeffrey P. Gambino, Mark D. Jaffe, Steven M. Shank, Anthony K. Stamper
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Patent number: 10622506Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.Type: GrantFiled: May 4, 2018Date of Patent: April 14, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
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Patent number: 10615302Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.Type: GrantFiled: September 20, 2018Date of Patent: April 7, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
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Patent number: 10573554Abstract: A device structure with a backside contact includes a silicon-on-insulator substrate including a device layer, a buried insulator layer, and an electrically-conducting connection in a trench. A final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.Type: GrantFiled: November 2, 2017Date of Patent: February 25, 2020Assignee: International Business Machines CorporationInventors: Jeffrey P. Gambino, Mark D. Jaffe, Steven M. Shank, Anthony K. Stamper
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Patent number: 10566235Abstract: A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming an electrically-conducting connection in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.Type: GrantFiled: October 19, 2017Date of Patent: February 18, 2020Assignee: International Business Machines CorporationInventors: Jeffrey P. Gambino, Mark D. Jaffe, Steven M. Shank, Anthony K. Stamper
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Patent number: 10559743Abstract: A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.Type: GrantFiled: August 30, 2017Date of Patent: February 11, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
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Publication number: 20190386168Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.Type: ApplicationFiled: August 27, 2019Publication date: December 19, 2019Inventors: John J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Mark D. JAFFE, Kirk D. PETERSON
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Publication number: 20190355865Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.Type: ApplicationFiled: August 5, 2019Publication date: November 21, 2019Inventors: John J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Mark D. JAFFE, Kirk D. PETERSON
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Patent number: 10453987Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.Type: GrantFiled: November 8, 2017Date of Patent: October 22, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
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Patent number: 10424686Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.Type: GrantFiled: May 16, 2018Date of Patent: September 24, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
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Publication number: 20190267285Abstract: A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer. A trench that extends through the device layer and partially through the buried insulator layer is formed. An electrically-conducting connection is formed in the trench.Type: ApplicationFiled: May 7, 2019Publication date: August 29, 2019Inventors: Jeffrey P. Gambino, Mark D. Jaffe, Steven M. Shank, Anthony K. Stamper
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Patent number: 10361123Abstract: A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer. An electrically-conducting connection is formed in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.Type: GrantFiled: October 31, 2017Date of Patent: July 23, 2019Assignee: International Business Machines CorporationInventors: Jeffrey P. Gambino, Mark D. Jaffe, Steven M. Shank, Anthony K. Stamper
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Publication number: 20190139819Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.Type: ApplicationFiled: January 4, 2019Publication date: May 9, 2019Inventors: Mark D. JAFFE, Alvin J. JOSEPH, Qizhi LIU, Anthony K. STAMPER
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Patent number: 10277188Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.Type: GrantFiled: May 4, 2018Date of Patent: April 30, 2019Assignee: SMARTSENS TECHNOLOGY (CAYMAN) CO., LTD.Inventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
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Publication number: 20190121022Abstract: Methods and structures for shielding optical waveguides are provided. A method includes forming a first optical waveguide core and forming a second optical waveguide core adjacent to the first optical waveguide core. The method also includes forming an insulator layer over the first optical waveguide core and the second optical waveguide core. The method further includes forming a shielding structure in the insulator layer between the first optical waveguide core and the second optical waveguide core.Type: ApplicationFiled: December 11, 2018Publication date: April 25, 2019Inventors: John J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Mark D. JAFFE, Kirk D. PETERSON, Jed H. RANKIN