Abstract: A semiconductor stack block contains either stacked semiconductor chip size semiconductor devices or semiconductor devices with semiconductor chips in a plastic housing composition, the semiconductor chips and the plastic housing composition having a coplanar area. Arranged on the active top side of the semiconductor chips and the plastic housing composition is an areal wiring structure, by which device interconnects are led to an individual edge of the semiconductor devices. The edges with the ends of the device interconnects form the underside of the semiconductor stack block, external contact areas being arranged on the ends of the device interconnects, the external contact areas carrying external contacts.

Abstract: A panel with a reconfigured wafer including semiconductor chips arranged in rows and columns on semiconductor device positions includes: at least one semiconductor chip having a front, a rear and edge sides provided per semiconductor device position. The reconfigured wafer includes: a front side that forms a coplanar area with the front sides of the at least one semiconductor chip and a plastic housing composition embedding the edge sides and the rear side of the at least one semiconductor chip. The reconfigured wafer includes, on a rear side of the wafer, structures configured to stabilize the panel. The structures are composed of the plastic housing composition and are formed as thickenings of the reconfigured wafer.

Abstract: A method for producing a device and a device is disclosed. In one embodiment, a component is surrounded by a material. A fluoropolymer-containing compound is produced at a surface of the material. A molding is produced from a material and a fluoropolymer-containing compound is produced at a surface of the molding by a vapor deposition.

Abstract: A module (100) is described having a semiconductor chip (1) which has at least one contact pad (2). A first dielectric layer (3), which contains a fluorocarbon compound, as well as a first wiring layer (4) are applied to the semiconductor chip (1).

Abstract: Semiconductor element having a semiconductor chip and a passive component, as well as a method for its production The invention relates to a semiconductor component (1) having a semiconductor chip (2), and a passive component (3), with the semiconductor component (1) having a coil (6) as the passive component (3). The semiconductor chip (2) and the passive component (3) are embedded in a plastic encapsulation compound (4) with connection elements to external contacts (31).

Abstract: An electronic device or devices and method for producing a device is disclosed. One embodiment provides an integrated component, a first package body and a contact device. The contact device penetrates the package body.

Abstract: A method for producing chip packages is disclosed. In one embodiment, a plurality of chips is provided. The chips each have first pads. Second connection pads are applied on the wafer, wherein each second pad is electrically connected to a first pad.

Abstract: A component and a method for producing a component are disclosed. The component comprises an integrated circuit, a housing body, a wiring device overlapping the integrated circuit and the housing body, and one or more external contact devices in communication with the wiring device.

Abstract: Thin integrated semiconductor devices are produced by being embedded in a molding compound matrix in such a way that a composite is formed. The semiconductor devices are first embedded in the matrix and then thinned after being embedded. The thin integrated semiconductor devices are singulated by forming separating cuts into the molding compound matrix between adjacent devices.

Abstract: A panel and a semiconductor device, in one embodiment composed of a composite plate with semiconductor chips and plastic housing composition and to a method for producing the same is disclosed. The embodiments include a wiring structure with interconnects and dielectric layers composed of a low-k dielectric is arranged on the top side of the composite plate.

Abstract: An apparatus and method for producing an article by molding is disclosed. In one embodiment, the apparatus includes a mold with an upper part, a lower part and at least one mold cavity, and has a vacuum clamping ring with a least one closable vent, which is arranged between the upper part and the lower part.

Abstract: A semiconductor device and a method for producing it is disclosed. In one embodiment, an adhesion-promoting layer having nanoparticles is arranged between a circuit carrier and a plastic housing composition for the purpose of enhanced adhesion.

Abstract: A blank and a semiconductor device are include a composite panel with semiconductor chips embedded in a plastic package molding compound. The blank includes a composite panel with semiconductor chips arranged in rows and columns in a plastic package molding compound with active upper sides of the semiconductor chips forming a coplanar surface area with the upper side of the composite panel. The blank further includes an orientation indicator impressed into the plastic package molding compound when the semiconductor chips are embedded within the molding compound.

Abstract: One aspect is a composite board including semiconductor chips in semiconductor device positions and a plastic housing composition partly embedding the semiconductor chips. A mould is provided for surrounding the semiconductor chips with plastic housing composition, the mould having a lower part and an upper part and a moldings cavity and the molding cavity having an upper contact area, which forms an interface with the top side of the plastic housing composition to be applied. The upper contact area is covered with a parting layer having essentially the same surface constitution and the same thermal conductivity as an adhesive film forming an interface with the underside of the plastic housing composition, with the result that a warpage of the composite board of less than 1% is obtained.

Abstract: A semiconductor module having a semiconductor chip stack and a method for producing the same is disclosed. In one embodiment, a thermally conductive layer with anisotropically thermally conductive particles is arranged between the semiconductor chips. The anisotropically thermally conductive particles have a lower thermal conductivity in a direction vertically with respect to the layer or the film than in a direction of the layer or the film.

Abstract: A semiconductor module includes: a plastic housing composition; at least one semiconductor chip with an active top side, a coplanar underside of the semiconductor module including the active top side of the semiconductor chip(s) and a surface of the plastic housing composition; a wiring structure arranged on the coplanar underside, the wiring structure including a center region and edge regions, with external contact areas distributed uniformly in the center region; external contacts arranged on the external contact areas of the wiring structure; and at least one surface-mountable semiconductor component arranged on the wiring structure in at least one of the edge regions, the surface-mountable semiconductor component(s) having a structural height that is less than the height of the external contacts.

Abstract: For the vertical electrical connection of a number of components, an electronic structure with at least two components has solderable connecting elements, which include at least one socket element and a solder ball stacked on the socket element. The socket element has a cylindrical core of an electrically conducting first material with a lateral surface, a bottom surface and a top surface. The core is surrounded with a cladding of an electrically insulating second material in such a way that the lateral surface of the core is covered by the cladding and the top surface and the bottom surface are kept free of the cladding.

Abstract: A heat treatment method is provided for a panel. The panel includes a plastic housing composition, in which semiconductor chips are embedded by their rear sides and edge sides, and the top sides of the semiconductor chips form a coplanar area with the plastic housing composition. The panel is fixed by its underside on a holder, and a temperature gradient (?T) is then generated between top side and the underside of the panel. The temperature gradient (?T) is then maintained for at least one delimited or selected time period. The panel is then cooled to room temperature (TR).

Abstract: A semiconductor stack block contains either stacked semiconductor chip size semiconductor devices or semiconductor devices with semiconductor chips in a plastic housing composition, the semiconductor chips and the plastic housing composition having a coplanar area. Arranged on the active top side of the semiconductor chips and the plastic housing composition is an areal wiring structure, by which device interconnects are led to an individual edge of the semiconductor devices. The edges with the ends of the device interconnects form the underside of the semiconductor stack block, external contact areas being arranged on the ends of the device interconnects, the external contact areas carrying external contacts.

Abstract: A carrier sheet with an adhesive film includes a heat-resistant base film with an upper side and an underside, and a thermoactive adhesive layer arranged on the underside of the base film and oriented toward the carrier sheet. The upper side of the base film includes an adhesive layer with semiconductor chips fixed on it, the semiconductor chips being surrounded by deactivated regions of the adhesive layer of the film upper side.