Abstract: When forming transistor elements on the basis of sophisticated high-k metal gate structures, the efficiency of a replacement gate approach may be enhanced by more efficiently adjusting the gate height of transistors of different conductivity type when the dielectric cap layers of transistors may have experienced a different process history and may thus require a subsequent adaptation of the final cap layer thickness in one type of the transistors. For this purpose, a hard mask material may be used during a process sequence for forming offset spacer elements in one gate electrode structure while covering another gate electrode structure.

Abstract: By selectively modifying the spacer width, for instance, by reducing the spacer width on the basis of implantation masks, an individual adaptation of dopant profiles may be achieved without unduly contributing to the overall process complexity. For example, in sophisticated integrated circuits, the performance of transistors of the same or different conductivity type may be individually adjusted by providing different sidewall spacer widths on the basis of an appropriate masking regime.

Abstract: When forming the strain-inducing semiconductor alloy in one type of transistor of a sophisticated semiconductor device, superior thickness uniformity of a dielectric cap material of the gate electrode structures may be achieved by forming encapsulating spacer elements on each gate electrode structure and providing an additional hard mask material. Consequently, in particular, in sophisticated replacement gate approaches, the dielectric cap material may be efficiently removed in a later manufacturing stage, thereby avoiding any irregularities upon replacing the semiconductor material by an electrode metal.

Abstract: Dielectric cap layers of sophisticated high-k metal gate electrode structures may be efficiently removed on the basis of a sacrificial fill material, thereby reliably preserving integrity of a protective sidewall spacer structure, which in turn may result in superior uniformity of the threshold voltage of the transistors. The sacrificial fill material may be provided in the form of an organic material that may be reduced in thickness on the basis of a wet developing process, thereby enabling a high degree of process controllability.

Abstract: When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage, the dielectric cap layer of the gate electrode structures may be efficiently removed on the basis of a carbon spacer element, which may thus preserve the integrity of the silicon nitride spacer structure. Thereafter, the sacrificial carbon spacer may be removed substantially without affecting other device areas, such as isolation structures, active regions and the like, which may contribute to superior process conditions during the further processing of the semiconductor device.

Abstract: In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.

Abstract: When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage, the dielectric cap layer of the gate electrode structures may be efficiently removed on the basis of a carbon spacer element, which may thus preserve the integrity of the silicon nitride spacer structure. Thereafter, the sacrificial carbon spacer may be removed substantially without affecting other device areas, such as isolation structures, active regions and the like, which may contribute to superior process conditions during the further processing of the semiconductor device.

Abstract: A selective stress memorization technique is disclosed in which the creation of tensile strain may be accomplished without additional photolithography steps by using an implantation mask or any other mask required during a standard manufacturing flow, or by providing a patterned cap layer for a strained re-crystallization of respective drain and source areas. In still other aspects, additional anneal steps may be used for selectively creating a crystalline state and a non-crystalline state prior to the re-crystallization on the basis of a cap layer. Thus, enhanced strain may be obtained in one type of transistor while not substantially negatively affecting the other type of transistor without requiring additional photolithography steps.

Abstract: A spacer structure in sophisticated semiconductor devices is formed on the basis of a high-k dielectric material, which provides superior etch resistivity compared to conventionally used silicon dioxide liners. Consequently, a reduced thickness of the etch stop material may nevertheless provide superior etch resistivity, thereby reducing negative effects, such as dopant loss in the drain and source extension regions, creating a pronounced surface topography and the like, as are typically associated with conventional spacer material systems.

Abstract: Memory cells in integrated circuit devices may be formed on the basis of functional molecules which may be positioned within via openings on the basis of appropriate patterning techniques, which may also be used for forming semiconductor-based integrated circuits. Consequently, memory cells may be formed on a “molecular” level without requiring extremely sophisticated patterning regimes, such as electron beam lithography and the like.

Abstract: In a stacked chip configuration, the “inter chip” connection is established on the basis of functional molecules, thereby providing a fast and space-efficient communication between the different semiconductor chips.

Abstract: A technique is presented which provides for a selective pre-amorphization of source/drain regions of a transistor while preventing pre-amorphization of a gate electrode of the transistor. Illustrative embodiments include the formation of a pre-amorphization implant blocking material over the gate electrode. Further illustrative embodiments include inducing a strain in a channel region by use of various stressors.

Abstract: When forming transistor elements on the basis of sophisticated high-k metal gate structures, the efficiency of a replacement gate approach may be enhanced by more efficiently adjusting the gate height of transistors of different conductivity type when the dielectric cap layers of transistors may have experienced a different process history and may thus require a subsequent adaptation of the final cap layer thickness in one type of the transistors. For this purpose, a hard mask material may be used during a process sequence for forming offset spacer elements in one gate electrode structure while covering another gate electrode structure.

Abstract: By performing an anisotropic resist modification prior to the actual resist trimming process, the profile of the end portions of the resist features may be significantly enhanced, for instance by providing substantially vertical sidewall portions. Consequently, an overlap of gate electrodes with the respective isolation structures may be obtained, while nevertheless the probability for a short circuit between opposing end portions of the gate electrodes may be significantly reduced, thereby providing the potential for further scaling down device dimensions.

Abstract: Performance of P-channel transistors may be enhanced on the basis of an embedded strain-inducing semiconductor alloy by forming a gate electrode structure on the basis of a high-k dielectric material in combination with a metal-containing cap layer in order to obtain an undercut configuration of the gate electrode structure. Consequently, the strain-inducing semiconductor alloy may be formed on the basis of a sidewall spacer of minimum thickness in order to position the strain-inducing semiconductor material closer to a central area of the channel region.

Abstract: In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

Abstract: In advanced semiconductor devices, spacer elements may be formed on the basis of a multi-station deposition technique, wherein a certain degree of variability of the various sub-layers of the spacer materials, such as a different thickness, may be applied in order to enhance etch conditions during the subsequent anisotropic etch process. Consequently, spacer elements of improved shape may result in superior deposition conditions when using a stress-inducing dielectric material. Consequently, yield losses due to contact failures in densely packed device areas, such as static RAM areas, may be reduced.

Abstract: During the formation of sophisticated gate electrode structures, a replacement gate approach may be applied in which plasma assisted etch processes may be avoided. To this end, one of the gate electrode structures may receive an intermediate etch stop liner, which may allow the replacement of the placeholder material and the adjustment of the work function in a later manufacturing stage. The intermediate etch stop liner may not negatively affect the gate patterning sequence.

Abstract: By recessing portions of the drain and source areas on the basis of a spacer structure, the subsequent implantation process for forming the deep drain and source regions may result in a moderately high dopant concentration extending down to the buried insulating layer of an SOI transistor. Furthermore, the spacer structure maintains a significant amount of a strained semiconductor alloy with its original thickness, thereby providing an efficient strain-inducing mechanism. By using sophisticated anneal techniques, undue lateral diffusion may be avoided, thereby allowing a reduction of the lateral width of the respective spacers and thus a reduction of the length of the transistor devices. Hence, enhanced charge carrier mobility in combination with reduced junction capacitance may be accomplished on the basis of reduced lateral dimensions.

Abstract: During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.