Patents by Inventor Martin Franosch

Martin Franosch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7728485
    Abstract: A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: June 1, 2010
    Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Martin Handtmann, Martin Franosch
  • Patent number: 7692317
    Abstract: Apparatus for housing a micromechanical structure, and a method for producing the housing. The apparatus has a substrate having a main side on which the micromechanical structure is formed, a photo-resist material structure surrounding the micromechanical structure to form a cavity together with the substrate between the substrate and the photo-resist material structure, wherein the cavity separates the micromechanical structure and the photo-resist material structure and has an opening, and a closure for closing the opening to close the cavity.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: April 6, 2010
    Assignee: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Winfried Nessler, Klaus-Gunter Oppermann
  • Patent number: 7682777
    Abstract: A method for producing a polymer structure on a patterning region of a substrate surface includes the steps of depositing an adhesion layer having a first polymer material onto the substrate surface, patterning the adhesion layer such that the first polymer material of the adhesion layer is removed in a first region and the first polymer material of the adhesion layer remains in a second region including the patterning region, depositing a polymer layer of a second polymer material onto the substrate surface and the adhesion layer and patterning the polymer layer such that the polymer structure forms in the second region.
    Type: Grant
    Filed: March 22, 2006
    Date of Patent: March 23, 2010
    Assignee: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Klaus-Guenter Oppermann
  • Publication number: 20100013032
    Abstract: A method for housing an electronic component in a device package includes providing a first substrate, wherein the electronic component is arranged in a component area on a first main surface of the first substrate, and wherein first contact pads are arranged outside of the component area, forming an open top frame structure around the component area on the first main surface of the first substrate, providing a second substrate having second contact pads, arranged symmetrically to the first contact pads and electrically and mechanically connecting the first main surface of the first substrate with the first main surface of the second substrate, so that the frame structure and the second substrate from a cavity or recess around the electronic component on the first substrate.
    Type: Application
    Filed: July 16, 2008
    Publication date: January 21, 2010
    Inventors: Klaus-Guenter Oppermann, Martin Franosch, Bernhard Gebauer
  • Publication number: 20100007016
    Abstract: A device with contact elements. One embodiment provides an electrical device including a structure defining a main face. The structure includes an array of cavities and an array of overhang regions, each overhang region defining an opening to one of the cavities. The electrical device further includes an array of contact elements, each contact element only partially filling one of the cavities and protruding from the structure over the main face.
    Type: Application
    Filed: July 14, 2008
    Publication date: January 14, 2010
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Klaus-Guenter Oppermann, Martin Franosch
  • Publication number: 20090295506
    Abstract: A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.
    Type: Application
    Filed: May 30, 2008
    Publication date: December 3, 2009
    Inventors: Martin Handtmann, Martin Franosch
  • Patent number: 7612430
    Abstract: The silicon bipolar transistor (100) comprises a base, with a first highly-doped base layer (105) and a second poorly-doped base layer (106) which together form the base. The emitter is completely highly-doped and mounted directly on the second base layer (106).
    Type: Grant
    Filed: June 15, 2001
    Date of Patent: November 3, 2009
    Assignee: Infineon Technologies AG
    Inventors: Martin Franosch, Thomas Meister, Herbert Schäfer, Reinhard Stengl, Konrad Wolf
  • Publication number: 20090261327
    Abstract: One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.
    Type: Application
    Filed: April 21, 2008
    Publication date: October 22, 2009
    Applicant: Infineon Technologies AG
    Inventors: Herbert Schaefer, Martin Franosch, Thomas Meister, Josef Boeck
  • Publication number: 20090179333
    Abstract: An integrated circuit that comprises a substrate and a structured layer on the substrate. The structured layer comprises an opening to the substrate, a first field and a second field on the substrate, wherein the first field and the second field, at least in part, overlap with the opening. The integrated circuit further comprises a first material in the area of the first field and a second material in the area of the second field. The first material impedes a wetting by a solder material, and the second provides a wetting by the solder material.
    Type: Application
    Filed: January 11, 2008
    Publication date: July 16, 2009
    Inventors: Alfred Martin, Barbara Hasler, Martin Franosch, Klaus-Guenter Oppermann
  • Publication number: 20090026607
    Abstract: It is proposed a method of manufacturing an electronic system wherein a first substrate comprising first connection elements on a first surface of the first substrate is provided; a second substrate comprising second connection elements on a first surface of the second substrate is provided; a polymer layer is applied to at least one of the two first surfaces; the first connection elements are attached to the second connection elements; and the polymer layer is caused to swell during or after the attachment.
    Type: Application
    Filed: July 23, 2007
    Publication date: January 29, 2009
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Holger HUEBNER, Martin FRANOSCH
  • Publication number: 20080224297
    Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
    Type: Application
    Filed: March 15, 2007
    Publication date: September 18, 2008
    Applicant: Infineon Technologies AG
    Inventors: Klaus-Guenter Oppermann, Martin Franosch, Martin Handtmann
  • Publication number: 20080020330
    Abstract: A method for developing a photoresist includes applying a first developer to the photoresist to remove non-cross-linked areas of the photoresist, and applying a second developer to the photoresist to remove remaining non-cross-linked areas of the photoresist, wherein the first developer and the second developer differ in their compositions.
    Type: Application
    Filed: June 29, 2007
    Publication date: January 24, 2008
    Inventors: Klaus-Guenter Oppermann, Martin Franosch
  • Publication number: 20080017974
    Abstract: Apparatus for housing a micromechanical structure, and a method for producing the housing. The apparatus has a substrate having a main side on which the micromechanical structure is formed, a photo-resist material structure surrounding the micromechanical structure to form a cavity together with the substrate between the substrate and the photo-resist material structure, wherein the cavity separates the micromechanical structure and the photo-resist material structure and has an opening, and a closure for closing the opening to close the cavity.
    Type: Application
    Filed: September 28, 2007
    Publication date: January 24, 2008
    Applicant: Infineon Technologies AG
    Inventors: MARTIN FRANOSCH, Andreas Meckes, Winfried Nessler, Klaus-Gunter Oppermann
  • Patent number: 7300823
    Abstract: Apparatus for housing a micromechanical structure, and a method for producing the housing. The apparatus has a substrate having a main side on which the micromechanical structure is formed, a photo-resist material structure surrounding the micromechanical structure to form a cavity together with the substrate between the substrate and the photo-resist material structure, wherein the cavity separates the micromechanical structure and the photo-resist material structure and has an opening, and a closure for closing the opening to close the cavity.
    Type: Grant
    Filed: November 17, 2004
    Date of Patent: November 27, 2007
    Assignee: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Winfried Nessler, Klaus-Gunter Oppermann
  • Patent number: 7288435
    Abstract: In a method for producing a cover for a region of a substrate, first a frame structure is produced in the region of the substrate, and then a cap structure is attached to the frame structure so that the region under the cap structure is covered. Thus, sensitive devices may be protected easily and at low cost from external influences and particularly from a casting material for casting the entire packaged device, which results when a diced chip is cast.
    Type: Grant
    Filed: August 18, 2004
    Date of Patent: October 30, 2007
    Assignee: Infineon Technologies AG
    Inventors: Robert Aigner, Martin Franosch, Andreas Meckes, Klaus-Guenter Oppermann, Marc Strasser
  • Publication number: 20070182029
    Abstract: A semiconductor is disclosed. In one embodiment, the semiconductor includes a semiconductor substrate having an active area region, a covering configured to protect the active area region, and a carrier. An interspace is located between the carrier and the covering. The interspace is filled with an underfiller material is disclosed.
    Type: Application
    Filed: February 8, 2007
    Publication date: August 9, 2007
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Martin Franosch, Andreas Meckes, Edward Fuergut
  • Patent number: 7234237
    Abstract: In a method for producing a protective cover for a device formed in a substrate, at first a sacrificial structure is produced on the substrate, wherein the sacrificial structure comprises a first portion covering a first area of the substrate including the device and a second portion extending from the first portion into a second area of the substrate including no device. Then a first cover layer is deposited that encloses the sacrificial structure such that the second portion of the sacrificial structure is at least partially exposed. Then the sacrificial structure is removed, and the structure formed by the removal of the sacrificial structure is closed.
    Type: Grant
    Filed: April 9, 2004
    Date of Patent: June 26, 2007
    Assignee: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Klaus-Günter Oppermann
  • Patent number: 7135757
    Abstract: A bipolar transistor includes a first layer with a collector. A second layer has a base cutout for a base. A third layer includes a lead for the base. The third layer is formed with an emitter cutout for an emitter. An undercut is formed in the second layer adjoining the base cutout. The base is at least partially located in the undercut. In order to obtain a low transition resistance between the lead and the base, an intermediate layer is provided between the first and the second layer. The intermediate layer is selectively etchable with respect to the second layer. At least in the region of the undercut between the lead and the base, a base connection zone is provided that can be adjusted independent of other production conditions. The intermediate layer is removed in a contact region with the base.
    Type: Grant
    Filed: August 4, 2004
    Date of Patent: November 14, 2006
    Assignee: Infineon Technologies AG
    Inventors: Reinhard Stengl, Thomas Meister, Herbert Schäfer, Martin Franosch
  • Publication number: 20060240643
    Abstract: A method for producing a polymer structure on a patterning region of a substrate surface includes the steps of depositing an adhesion layer having a first polymer material onto the substrate surface, patterning the adhesion layer such that the first polymer material of the adhesion layer is removed in a first region and the first polymer material of the adhesion layer remains in a second region including the patterning region, depositing a polymer layer of a second polymer material onto the substrate surface and the adhesion layer and patterning the polymer layer such that the polymer structure forms in the second region.
    Type: Application
    Filed: March 22, 2006
    Publication date: October 26, 2006
    Applicant: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Klaus-Guenter Oppermann
  • Publication number: 20060191868
    Abstract: In the inventive method for the wet-chemical removal of a sacrificial material in a material structure, there is first provided the material structure, wherein the material structure has a treatment region with the sacrificial material accessible through an opening. Subsequently, the sacrificial material is brought into contact with a wet-chemical treatment agent through the opening for the removal of the sacrificial material, wherein a mechanical vibration is generated in the wet-chemical treatment agent or in the wet-chemical treatment agent and the material structure during the contacting of the sacrificial material with the wet-chemical treatment agent.
    Type: Application
    Filed: February 2, 2006
    Publication date: August 31, 2006
    Applicant: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Klaus-Guenter Oppermann