Patents by Inventor Martin Poelzl

Martin Poelzl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10991812
    Abstract: Disclosed is a transistor device. The transistor device includes: in a semiconductor body, a drift region, a body region adjoining the drift region, and a source region separated from the drift region by the body region; a gate electrode dielectrically insulated from the body region by a gate dielectric; a source electrode electrically connected to the source region; at least one field electrode dielectrically insulated from the drift region by a field electrode dielectric; and a rectifier element coupled between the source electrode and the field electrode. The field electrode and the field electrode dielectric are arranged in a first trench that extends from a first surface of the semiconductor body into the semiconductor body. The rectifier element is integrated in the first trench in a rectifier region that is adjacent at least one of the source region and the body region.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: April 27, 2021
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Siemieniec, Robert Haase, Gerhard Noebauer, Martin Poelzl
  • Patent number: 10971449
    Abstract: A semiconductor device includes a semiconductor layer with a thickness of at most 50 ?m. A first metallization structure is disposed on a first surface of the semiconductor layer. The first metallization structure includes a first copper region with a first thickness. A second metallization structure is disposed on a second surface of the semiconductor layer opposite to the first surface. The second metallization structure includes a second copper region with a second thickness. The total thickness, which is the sum of the first thickness and the second thickness, deviates from the thickness of the semiconductor layer by not more than 20% and a difference between the first thickness and the second thickness is not more than 20% of the total thickness.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: April 6, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Paul Ganitzer, Martin Poelzl
  • Publication number: 20210098580
    Abstract: First trenches extend from a process surface into a semiconductor layer. An alignment layer with mask pits in a with respect to the process surface vertical projection of the first trenches is formed on the process surface. Sidewalls of the mask pits have a smaller tilt angle with respect to the process surface than sidewalls of the first trenches. The mask pits are filled with an auxiliary material. A gate trench for a gate structure is formed in a mesa section of the semiconductor layer between the first trenches, wherein the auxiliary material is used as an etch mask.
    Type: Application
    Filed: December 11, 2020
    Publication date: April 1, 2021
    Inventors: Martin Poelzl, Oliver Blank, Franz Hirler, Maximilian Roesch, Li Juin Yip
  • Patent number: 10903321
    Abstract: First trenches extend from a process surface into a semiconductor layer. An alignment layer with mask pits in a with respect to the process surface vertical projection of the first trenches is formed on the process surface. Sidewalls of the mask pits have a smaller tilt angle with respect to the process surface than sidewalls of the first trenches. The mask pits are filled with an auxiliary material. A gate trench for a gate structure is formed in a mesa section of the semiconductor layer between the first trenches, wherein the auxiliary material is used as an etch mask.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: January 26, 2021
    Assignee: Infineon Technologies Austria AG
    Inventors: Martin Poelzl, Oliver Blank, Franz Hirler, Maximilian Roesch, Li Juin Yip
  • Patent number: 10868172
    Abstract: A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate, the body region including a vertical channel region adjacent a sidewall of the gate trench; a source region in the Si substrate above the body region; a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and by a portion of the body region; an electrically conductive material in the contact trench; and a diffusion barrier structure interposed between a sidewall of the contact trench and the vertical channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and configured to increase carrier mobility within the vertical channel region. Corresponding methods of manufacture are also described.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: December 15, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant, Bernhard Goller, Andreas Meiser
  • Patent number: 10861966
    Abstract: A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate adjacent the gate trench; a source region in the Si substrate above the body region; a diffusion barrier structure adjacent a sidewall of the gate trench, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si; and a channel region formed in the Si capping layer and which vertically extends along the sidewall of the gate trench. Corresponding methods of manufacture are also described.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: December 8, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Thomas Feil, Robert Haase, Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Bernhard Goller, Ravi Keshav Joshi
  • Publication number: 20200350401
    Abstract: A semiconductor device includes a source region and a drain region of a first conductivity type, a body region of a second conductivity type between the source region and the drain region, a gate configured to control current through a channel of the body region, a drift zone of the first conductivity type between the body region and the drain region, a superjunction structure formed by a plurality of regions of the second conductivity type laterally spaced apart from one another by intervening regions of the drift zone, and a diffusion barrier structure disposed along sidewalls of the regions of the second conductivity type of the superjunction structure. The diffusion barrier structure includes alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si.
    Type: Application
    Filed: July 16, 2020
    Publication date: November 5, 2020
    Inventors: Martin Poelzl, Robert Haase, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi, Andreas Meiser, Xiaoqiu Huang, Ling Ma
  • Patent number: 10790353
    Abstract: A semiconductor device includes a source region and a drain region of a first conductivity type, a body region of a second conductivity type between the source region and the drain region, a gate configured to control current through a channel of the body region, a drift zone of the first conductivity type between the body region and the drain region, a superjunction structure formed by a plurality of regions of the second conductivity type laterally spaced apart from one another by intervening regions of the drift zone, and a diffusion barrier structure disposed along sidewalls of the regions of the second conductivity type of the superjunction structure. The diffusion barrier structure includes alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: September 29, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Martin Poelzl, Robert Haase, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi, Andreas Meiser, Xiaoqiu Huang, Ling Ma
  • Publication number: 20200303498
    Abstract: A method of manufacturing a semiconductor device includes: forming one or more device epitaxial layers over a main surface of a doped Si base substrate; forming a diffusion barrier structure including alternating layers of Si and oxygen-doped Si in an upper part of the doped Si base substrate adjacent the main surface of the doped Si base substrate, in a lower part of the one or more device epitaxial layers adjacent the main surface of the doped Si base substrate, or in one or more additional epitaxial layers disposed between the main surface of the doped Si base substrate and the one or more device epitaxial layers; and forming a gate above the diffusion barrier structure.
    Type: Application
    Filed: June 9, 2020
    Publication date: September 24, 2020
    Inventors: Martin Poelzl, Robert Haase, Maximilian Roesch, Sylvain Leomant, Andreas Meiser, Bernhard Goller, Ravi Keshav Joshi
  • Publication number: 20200273750
    Abstract: In an embodiment, a composite semiconductor substrate includes a first polymer layer and a plurality of semiconductor dies having a first surface, a second surface opposing the first surface, side faces extending between the first surface and the second surface and a first metallization structure on the first surface. Edge regions of the first surface and at least portions of the side faces are embedded in the first polymer layer. At least one metallic region of the first metallization structure is exposed from the first polymer layer. A second metallization structure is arranged on the second surface of the plurality of semiconductor dies. A second polymer layer is arranged on edge regions of the second surface of the plurality of semiconductor dies and on the first polymer layer in regions between the side faces of neighbouring ones of the plurality of semiconductor dies.
    Type: Application
    Filed: May 14, 2020
    Publication date: August 27, 2020
    Inventors: Paul Ganitzer, Carsten von Koblinski, Thomas Feil, Gerald Lackner, Jochen Mueller, Martin Poelzl, Tobias Polster
  • Patent number: 10741638
    Abstract: A semiconductor device includes a doped Si base substrate, one or more device epitaxial layers formed over a main surface of the doped Si base substrate, a diffusion barrier structure, and a gate formed above the diffusion barrier structure. The diffusion barrier structure includes alternating layers of Si and oxygen-doped Si formed in an upper part of the doped Si base substrate adjacent the main surface of the doped Si base substrate, in a lower part of the one or more device epitaxial layers adjacent the main surface of the doped Si base substrate, or in one or more additional epitaxial layers disposed between the main surface of the doped Si base substrate and the one or more device epitaxial layers.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: August 11, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Martin Poelzl, Robert Haase, Maximilian Roesch, Sylvain Leomant, Andreas Meiser, Bernhard Goller, Ravi Keshav Joshi
  • Publication number: 20200203525
    Abstract: A transistor device with a gate electrode in a vertical gate trench is described. The gate electrode includes a silicon gate region and a metal inlay region. The silicon gate region forms at least a section of a sidewall of the gate electrode. The metal inlay region extends up from a lower end of the gate electrode.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 25, 2020
    Inventors: Robert Paul Haase, Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani, Harsh Naik, Martin Poelzl, Martin Henning Vielemeyer, Britta Wutte
  • Patent number: 10672664
    Abstract: In an embodiment, a method includes forming at least one trench in non-device regions of a first surface of a semiconductor wafer, the non-device regions being arranged between component positions, the component positions including device regions and a first metallization structure, applying a first polymer layer to the first surface of a semiconductor wafer such that the trenches and edge regions of the component positions are covered with the first polymer layer and such that at least a portion of the first metallization structure is uncovered by the first polymer layer, removing portions of a second surface of the semiconductor wafer, the second surface opposing the first surface, revealing portions of the first polymer layer in the non-device regions and producing a worked second surface and inserting a separation line through the first polymer layer in the non-device regions to form a plurality of separate semiconductor dies.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: June 2, 2020
    Assignee: Infineon Technologies AG
    Inventors: Paul Ganitzer, Carsten von Koblinski, Thomas Feil, Gerald Lackner, Jochen Mueller, Martin Poelzl, Tobias Polster
  • Publication number: 20200152733
    Abstract: A semiconductor device includes a source region and a drain region of a first conductivity type, a body region of a second conductivity type between the source region and the drain region, a gate configured to control current through a channel of the body region, a drift zone of the first conductivity type between the body region and the drain region, a superjunction structure formed by a plurality of regions of the second conductivity type laterally spaced apart from one another by intervening regions of the drift zone, and a diffusion barrier structure disposed along sidewalls of the regions of the second conductivity type of the superjunction structure. The diffusion barrier structure includes alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si.
    Type: Application
    Filed: November 9, 2018
    Publication date: May 14, 2020
    Inventors: Martin Poelzl, Robert Haase, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi, Andreas Meiser, Xiaoqiu Huang, Ling Ma
  • Publication number: 20200127134
    Abstract: A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate, the body region including a vertical channel region adjacent a sidewall of the gate trench; a source region in the Si substrate above the body region; a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and by a portion of the body region; an electrically conductive material in the contact trench; and a diffusion barrier structure interposed between a sidewall of the contact trench and the vertical channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and configured to increase carrier mobility within the vertical channel region. Corresponding methods of manufacture are also described.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Inventors: Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant, Bernhard Goller, Andreas Meiser
  • Publication number: 20200127135
    Abstract: A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate adjacent the gate trench; a source region in the Si substrate above the body region; a diffusion barrier structure adjacent a sidewall of the gate trench, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si; and a channel region formed in the Si capping layer and which vertically extends along the sidewall of the gate trench. Corresponding methods of manufacture are also described.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Inventors: Thomas Feil, Robert Haase, Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Bernhard Goller, Ravi Keshav Joshi
  • Publication number: 20200126904
    Abstract: A semiconductor device includes a semiconductor layer with a thickness of at most 50 ?m. A first metallization structure is disposed on a first surface of the semiconductor layer. The first metallization structure includes a first copper region with a first thickness. A second metallization structure is disposed on a second surface of the semiconductor layer opposite to the first surface. The second metallization structure includes a second copper region with a second thickness. The total thickness, which is the sum of the first thickness and the second thickness, deviates from the thickness of the semiconductor layer by not more than 20% and a difference between the first thickness and the second thickness is not more than 20% of the total thickness.
    Type: Application
    Filed: December 20, 2019
    Publication date: April 23, 2020
    Inventors: Paul Ganitzer, Martin Poelzl
  • Patent number: 10593623
    Abstract: A semiconductor device includes a semiconductor layer with a thickness of at most 50 ?m. A first metallization structure is disposed on a first surface of the semiconductor layer. The first metallization structure includes a first copper region with a first thickness. A second metallization structure is disposed on a second surface of the semiconductor layer opposite to the first surface. The second metallization structure includes a second copper region with a second thickness. The total thickness, which is the sum of the first thickness and the second thickness, deviates from the thickness of the semiconductor layer by not more than 20% and a difference between the first thickness and the second thickness is not more than 20% of the total thickness.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: March 17, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Paul Ganitzer, Martin Poelzl
  • Patent number: 10580888
    Abstract: A semiconductor device includes a gate trench extending into a Si substrate, a body region in the Si substrate, the body region including a channel region which extends along a sidewall of the gate trench, a source region in the Si substrate above the body region, a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and a portion of the body region, the contact trench being filled with an electrically conductive material which contacts the source region at a sidewall of the contact trench and a highly doped body contact region at a bottom of the contact trench, and a diffusion barrier structure formed along the sidewall of the contact trench and disposed between the highly doped body contact region and the channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: March 3, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant, Bernhard Goller, Andreas Meiser
  • Patent number: 10573742
    Abstract: A semiconductor device includes a gate trench extending into a Si substrate, a body region in the Si substrate adjacent the gate trench, a source region in the Si substrate above the body region, a contact trench extending into the Si substrate and filled with an electrically conductive material which contacts the source region at a sidewall of the contact trench and a highly doped body contact region at a bottom of the contact trench, a diffusion barrier structure formed along the sidewall of the gate trench, the diffusion barrier structure comprising alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si, and a channel region formed in the Si capping layer and which vertically extends along the sidewall of the gate trench. Corresponding methods of manufacture are also described.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: February 25, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Thomas Feil, Robert Haase, Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Bernhard Goller, Ravi Keshav Joshi