Abstract: A thermoelectric conversion element includes a cable. The cable includes a first member extended in the axis direction of the cable, and a second member extended in the axis direction to cover at least a part of the outer face of the first member. One of the first and second members is a magnetic body. The other of the first and second members is a conductive body formed of material exhibiting a spin orbit coupling.

Abstract: In the silicon core wire according to a first aspect of the present invention, a male thread part formed at one end of a first thin silicon rod and a female thread part formed at one end of a second thin silicon rod may be screwed together and fastened. In the silicon core wire according to a second aspect of the present invention, a thread part formed at one end of a first thin silicon rod and a thread part formed at one end of a second thin silicon rod may be screwed together and fastened via an adapter with thread parts formed at both ends.

Abstract: The purpose of the present invention is to make it possible to ensure a strength that allows thermoelectric evaluation to be performed even when sintering is carried out at a temperature lower than the minimum sintering temperature of a power generation layer, in a thermoelectric conversion element. For this purpose, this thermoelectric conversion element is characterized by being provided with a power generation layer and support layers including a sintered body, wherein the power generation layer is provided with a metal-magnetic insulator composite structure in which metal is formed in a net shape around a granulated magnetic body, the support layers are formed so as to be in contact with the top and bottom or the right and left of the power generation layer, and the minimum sintering temperature of the support layers is lower than the minimum sintering temperature of the power generation layer.

Abstract: A thermoelectric conversion element 10 includes an anomalous Nernst material 11 having the anomalous Nernst effect, in which: the anomalous Nernst material 11 includes at least an element having the inverse spin-Hall effect; and the element is spin-polarized. By applying, for example, a magnetic field to such the thermoelectric conversion element 10 in the x direction and a temperature gradient thereto in the z direction, thermoelectromotive force can be taken out from terminals 12.

Abstract: An apparatus for producing polycrystalline silicon by the Siemens method, includes: a carbon-made core wire holder 14 holding a silicon core wire 13; an electrode portion 10 energizing the core wire holder 14, the electrode portion 10 having a top end 18 in contact with a bottom end of the core wire holder 14; and a first screwing section provided 17a only around a lower part of the core wire holder 14 to be fixed to the electrode portion 10, wherein the core wire holder 14 has a contact surface with the top end 18 of the electrode portion 10, the contact surface being lower in electric resistance than an area of the first screwing section 17a to be fastened.

Abstract: An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.

Abstract: In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis CR is shifted from a center axis C0 of a silicon core wire 20 by 2 mm or more, is manufactured.

Abstract: A thermoelectric conversion unit includes a plurality of pipes 1 and a thermoelectric conversion element. A first fluid flows through the pipe 1. The thermoelectric conversion element 2 is wound around each of the pipes 1, and generates electric power due to a temperature difference between the first fluid and a second fluid flowing outside the pipe 1. Further, the thermoelectric conversion element 2 has a sheet shape.

Abstract: A hydrogen gas recovery system according to the present ingestion is configured by a condensation and separation apparatus (A) that condenses and separates chlorosilanes from a hydrogen-containing reaction exhaust gas exhausted from a polycrystalline silicon production step, a compression apparatus (B) that compresses the hydrogen-containing reaction exhaust gas, an absorption apparatus (C) that absorbs and separates hydrogen chloride by contacting the hydrogen-containing reaction exhaust gas with an absorption liquid, a first adsorption apparatus (D) comprising an adsorption column filled with activated carbon for adsorbing and removing methane, hydrogen chloride, and part of the chlorosilanes each contained in the hydrogen-containing reaction exhaust gas, a second adsorption apparatus (E) comprising an adsorption column filled with synthetic zeolite that adsorbs and removes methane contained in the hydrogen-containing reaction exhaust gas, and a gas line (F) that recovers a purified hydrogen gas having a re

Abstract: A system for purifying trichlorosilane that can prevent re-contamination by the dissociation of an adduct occurring in association with the conversion of high boiling point compounds or the remaining of impurities due to an equilibrium constraint is provided. Trichlorosilane containing impurities serving as a donor or an acceptor in silicon crystals is supplied to a multistage impurity conversion step. These impurities in the trichlorosilane are converted into high boiling point compounds in the presence of a distillation aid. A plurality of impurity conversion step sections (101 to 10n) are connected in series, and any of the impurity conversion step sections comprises a reception section a for the trichlorosilane from the preceding stage section, an introduction section b for the distillation aid, a transmission section c for the trichlorosilane to the subsequent stage section, and a drain section d that discharges a remainder out of the impurity conversion step section.

Abstract: In order to enable the measurement of thermal property information about a subject, this thermal diffusion coefficient measuring device, which is used by contacting the surface of a living body, is provided with: a biological information sensor comprising a temperature sensor and a heat flux sensor; and a heating/cooling control means. The temperature sensor is provided at a position contacting the surface of the living body, and operates so as to detect skin temperature. The heat flux sensor is provided at a position contacting the surface of the living body, while being adjacent to the temperature sensor, and operates so as to detect heat flux on the surface of the living body. The heating/cooling control means enables the measurement of the temperature diffusion coefficient of a thermal resistance component that is present between the biological information sensor and a deep inner portion of the living body.

Abstract: A relation search system includes: a storage means (1) which stores a data set which includes a first-type data group and a second-type data group which are two types of data group that are acquired by different methods; a data adaptation means (2) which either corrects or reconstructs either first data which belongs to the first-type data group or second data which belongs to the second-type data group and which is associated with the first data, such that a divergence which arises between the first data and the second data because of the difference in the methods for the acquisition thereof is reduced; and a learning means (3) which, using the data set which includes the corrected or reconstructed data, carries out machine learning.

Abstract: [Problem] To provide a heat exchange device with which efficient electric power generation can be performed while transfer of a heat amount is maintained. [Solution] A heat exchange device comprising a heat exchange section 1 and a magnetic body 2. The heat exchange section 1 includes a first heat transmission interface 3 in contact with a heat source, and a second heat transmission interface 4 in contact with a heat bath having a temperature different from that of the heat source. The magnetic body 2 is interposed between the first heat transmission interface 3 and the second heat transmission interface 4 of the heat exchange section 1, and includes a magnetization component in a direction intersecting a heat flux produced between the first heat transmission interface 3 and the second heat transmission interface 4.

Abstract: Provided is a polycrystalline silicon rod suitable as a raw material for production of single-crystalline silicon. A crystal piece (evaluation sample) is collected from a polycrystalline silicon rod grown by a Siemens method, and a polycrystalline silicon rod in which an area ratio of a crystal grain having a particle size of 100 nm or less is 3% or more is sorted out as the raw material for production of single-crystalline silicon. When single-crystalline silicon is grown by an FZ method using the polycrystalline silicon rod as a raw material, the occurrence of dislocation is remarkably suppressed.

Abstract: A thermoelectric conversion structure according to an exemplary aspect of the invention includes a thermoelectric conversion unit structure including a magnetic fine particle including a magnetic material with the spin Seebeck effect arising and an electromotive body with which to cover the magnetic fine particle, wherein a plurality of the thermoelectric conversion unit structures form an aggregate with the electromotive body connecting to each other.

Abstract: A thermoelectric conversion element includes: a magnetic body having a magnetization; and an electromotive body formed of material exhibiting a spin orbit coupling and jointed to the magnetic body. The magnetic body has an upper joint surface jointed to the electromotive body. The upper joint surface has concavities and convexities.

Abstract: In order to further improve the spin-current/electric-current conversion efficiency in a spin-current thermoelectric conversion element, a thermoelectric conversion element includes a magnetic material layer having in-plane magnetization; and an electromotive material layer magnetically coupled with the magnetic material layer. The electromotive material layer includes a first conductor with a spin orbit coupling arising, and a second conductor having lower electric conductivity than electric conductivity of the first conductor.

Abstract: The present invention provides polycrystalline silicon suitably used as a raw material for producing single crystal silicon. The polycrystalline silicon rod of the present invention is a polycrystalline silicon rod grown by chemical vapor deposition performed under a pressure of 0.3 MPaG or more, wherein when a plate-shaped sample piece collected from an arbitrary portion of the polycrystalline silicon rod is observed with a microscope with a temperature increased from a temperature lower than a melting point of silicon up to a temperature exceeding the melting point of silicon, a heterogeneous crystal region, which is a crystal region including a plurality of crystal grains heterogeneously assembled and including no needle-like crystal, having a diameter exceeding 10 ?m is not observed.

Abstract: There is provided trichlorosilane purification technology in which it is unnecessary to discharge large amounts of chlorosilanes oat of the system in the production of high-purity trichlorosilane from a chlorosilane fraction containing hydrocarbons and in which the reaction control can also be easily performed. In the present invention, the step of converting hydrocarbons contained in a chlorosilane fraction into low-boiling materials by thermal decomposition has been provided in the purification system in order to easily separate the hydrocarbons. Thereby, the conversion of hydrocarbons into low-boiling materials by thermal decomposition and the separation are performed in the trichlorosilane purification cycle, and it is unnecessary to discharge large amounts of chlorosilanes out of the system. As a result, the trichlorosilane production efficiency is increased, and the problem of yield reduction of polycrystalline silicon does not arise either.

Abstract: To provide polycrystalline silicon suitable as a raw material for production of single-crystalline silicon. A D/L value is set within the range of less than 0.40 when multiple pairs of silicon cores are placed in a reaction furnace in production of a polycrystalline silicon rod having a diameter of 150 mm or more by deposition according to a chemical vapor deposition process and it is assumed that the average value of the final diameter of the polycrystalline silicon rod is defined as D (mm) and the mutual interval between the multiple pairs of silicon cores is defined as L (mm).