Abstract: In order to produce high-purity trichlorosilane by removing methyldichlorosilane from a mixture (S) containing methyldichlorosilane (CH3HSiCl2), tetrachlorosilane (SiCl4), and trichlorosilane (HSiCl3) in the method for producing trichlorosilane of the present invention, a procedure is employed in which chlorine atoms are redistributed between methyldichlorosilane and tetrachlorosilane through catalytic treatment for conversion into trichlorosilane and methyltrichlorosilane (CH3SiCl3). Methyldichlorosilane (boiling point: 41° C.) having a boiling point close to that of trichlorosilane (boiling point: 32° C.) to be purified is converted into methyltrichlorosilane (boiling point: 66° C.) having a higher boiling point through redistribution of chlorine atoms between methyldichlorosilane and tetrachlorosilane, achieving easy removal of impurities.

Abstract: A thermoelectric conversion structure according to an exemplary aspect of the invention includes a thermoelectric conversion unit structure including a magnetic fine particle including a magnetic material with the spin Seebeck effect arising and an electromotive body with which to cover the magnetic fine particle, wherein a plurality of the thermoelectric conversion unit structures form an aggregate with the electromotive body connecting to each other.

Abstract: In order to further improve the spin-current/electric-current conversion efficiency in a spin-current thermoelectric conversion element, a thermoelectric conversion element includes a magnetic material layer having in-plane magnetization; and an electromotive material layer magnetically coupled with the magnetic material layer. The electromotive material layer includes a first conductor with a spin orbit coupling arising, and a second conductor having lower electric conductivity than electric conductivity of the first conductor.

Abstract: Provided are a coordinate transformation device, a coordinate transformation program, and a coordinate transformation method which are capable of calculating coordinates on a spheroid at a high speed and with a minimum error. A geographical information management device includes a storage device and a operation unit. The storage device stores a basic shape database, an airspace information database, and a parameter information database.

Abstract: A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates.

Abstract: Concerning a thermoelectric conversion element, it is desired to provide a new spin current to charge current conversion material. A thermoelectric conversion element includes a magnetic layer possessing in-plane magnetization, and an electromotive layer magnetically coupled to the magnetic layer. The electromotive layer is formed of a carbon material, possesses anisotropy of electric conductivity, and further includes an additive.

Abstract: An object of the present invention is to provide a thermoelectric conversion element that can demonstrate satisfactory thermoelectric conversion performance, and also has flexibility or can be mounted on a surface having irregularities or a curved surface, a method of manufacturing such a thermoelectric conversion element, and a method of using such a thermoelectric conversion element. A thermoelectric conversion element according to the present invention includes a columnar crystal ferrite layer and an electromotive film formed on the columnar crystal ferrite layer. The electromotive film is configured to generate an electromotive force in an in-plane direction by an inverse spin Hall effect. Columnar crystal grains of the columnar crystal ferrite layer include a major axis a of not less than 200 nm and a minor axis b of not more than 500 nm where a>b.

Abstract: A thermoelectric conversion element includes a magnetic layer which has a component magnetized in an in-plane direction, an electromotive layer which includes a material with spin orbit coupling, and a spin injection layer. The spin injection layer is provided between the magnetic layer and the electromotive layer and magnetically coupled to both the magnetic layer and the electromotive layer. A magnetic moment per unit volume of the spin injection layer is smaller than the magnetic moment per unit volume of the magnetic layer.

Abstract: A thermoelectric conversion element includes a thermoelectric conversion sheet possessing flexibility. The thermoelectric conversion sheet includes a magnetic layer, an electricity-generating layer that is formed on the magnetic layer so as to contact with the magnetic layer and that is formed of a material exhibiting spin orbit coupling, and a first electrode and a second electrode formed on the electricity-generating layer so as to contact with the electricity-generating layer. The first electrode and the second electrode extend in a longitudinal direction of the thermoelectric conversion sheet, and are separated from each other in a first direction perpendicular to the longitudinal direction.

Abstract: A thermoelectric conversion element includes: a magnetic layer; a conductive film formed on the magnetic layer and configured to generate an electromotive force in an in-plane direction by inverse spin-Hall effect; and two terminal sections formed to contact with the conductive film at two portions whose potentials are different to each other by the electromotive force. Each of the two terminal sections contacts with the conductive film in a continuous or discrete contact surface. A longitudinal direction of a minimum rectangle which encompasses the continuous or discrete contact surface of each of the two terminal sections intersects with the direction of the electromotive force.

Abstract: A thermoelectric conversion element includes a cable. The cable includes a first member extended in the axis direction of the cable, and a second member extended in the axis direction to cover at least a part of the outer face of the first member. One of the first and second members is a magnetic body. The other of the first and second members is a conductive body formed of material exhibiting a spin orbit coupling.

Abstract: A substrate holding device for clamping a substrate in a processing chamber in which plasma processing is carried out includes a chuck main body having positive and negative electrodes and, a chuck plate having a rib portion capable of bringing the peripheral edge portion of the substrate into surface contact therewith and multiple support portions provided upright and arranged at predetermined intervals in an internal space surrounded by the rib portion, a DC power supply for applying a DC voltage between the two electrodes, an AC power supply for passing an alternating current through the capacitance of the chuck plate, and first measuring means for measuring the alternating current passing through the capacitance of the chuck plate, and further includes removing means for removing an AC component superimposed on the alternating current from a plasma produced in the processing chamber during plasma processing.

Abstract: A thermoelectric conversion element includes: a magnetic body having a magnetization; and an electromotive body formed of material exhibiting a spin orbit coupling and jointed to the magnetic body. The magnetic body has an upper joint surface jointed to the electromotive body. The upper joint surface has concavities and convexities.

Abstract: A magnetic element according to the present invention is formed of a layered product having a magnetic insulator film formed on a substrate including a material having no crystal structure. The magnetic insulator film has a columnar crystal structure.

Abstract: A thermoelectric conversion element includes: a magnetic layer; a conductive film formed on the magnetic layer and configured to generate an electromotive force in an in-plane direction by inverse spin-Hall effect; and two terminal sections formed to contact with the conductive film at two portions whose potentials are different to each other by the electromotive force. Each of the two terminal sections contacts with the conductive film in a continuous or discrete contact surface. A longitudinal direction of a minimum rectangle which encompasses the continuous or discrete contact surface of each of the two terminal sections intersects with the direction of the electromotive force.

Abstract: A thermoelectric conversion element of the present invention includes: a magnetic layer; and an electrode layer formed on the magnetic layer. The electrode layer includes: a first region, and a second region having lower spin current—electric current conversion efficiency and resistivity than those of the first region.

Abstract: A CNT channel layer of a transistor is cut along a direction perpendicular to the channel to form a plurality of CNT patches, which are used to connect between a source and a drain. The arrangement of the CNT channel layer formed of a plurality of CNT patches can increase the probability that part of CNT patches becomes a semiconductive CNT patch. Since part of a plurality of CNT patches forming the channel layer is formed of a semiconductive CNT patch, a transistor having a good on/off ratio can be provided.

Abstract: The electrostatic chuck is made up of: a chuck main body having electrodes; a chuck plate of a dielectric material and having a rib portion with which a peripheral edge portion of the substrate is capable of coming into surface contact, and a plurality of supporting portions which are vertically disposed at a predetermined distance from one another in an inner space enclosed by the rib portion; and a gas introduction means for introducing a predetermined gas into the inner space.

Abstract: To provide a technique which cleans an attracting face of a mechanism for electrostatically attracting an object to be processed inside a vacuum processing apparatus and keeps its attracting force constant. The method of the present invention is for cleaning an attracting face of a hot plate which holds the object to be processed inside a vacuum processing chamber through electrostatic attraction. The invention method includes a step of cleaning the attracting face of the hot plate by applying a high-frequency electric power of 13.56 MHz to a metallic base arranged under and near the hot plate in a state in which a cleaning gas is introduced into the vacuum processing chamber.

Abstract: A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates.