Abstract: A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates.

Abstract: A substrate holding device for clamping a substrate in a processing chamber in which plasma processing is carried out includes a chuck main body having positive and negative electrodes and, a chuck plate having a rib portion capable of bringing the peripheral edge portion of the substrate into surface contact therewith and multiple support portions provided upright and arranged at predetermined intervals in an internal space surrounded by the rib portion, a DC power supply for applying a DC voltage between the two electrodes, an AC power supply for passing an alternating current through the capacitance of the chuck plate, and first measuring means for measuring the alternating current passing through the capacitance of the chuck plate, and further includes removing means for removing an AC component superimposed on the alternating current from a plasma produced in the processing chamber during plasma processing.

Abstract: Disclosed is a switching element provided with a gate dielectric film and an active layer disposed in contact with the gate dielectric film. The active layer includes carbon nanotubes, and the gate dielectric film includes non-conjugated polymer containing an aromatic ring in a side chain.

Abstract: A semiconductor device having good switching characteristics even metallic CNTs are included and a manufacturing method thereof are provided. The semiconductor device includes a source electrode; a drain electrode; and a channel layer formed between the source electrode and the drain electrode and including a carbon nanotube group. The carbon nanotube group includes conductive carbon nanotubes having a characteristic of a conductive material and semiconductive carbon nanotubes having a characteristic of a semiconductive material. The density of the carbon nanotube group is the density where the source electrode and the drain electrode are connected to each other through all of the carbon nanotube group and not connected to each other only through the conductive carbon nanotubes.

Abstract: There is provided a method of manufacturing a chuck plate for an electrostatic chuck of good productivity which is free from poor releasing of a wafer which is a to-be-processed substrate, from the initial time of putting the electrostatic chuck to a new use. The method of manufacturing a chuck plate for electrostatic chuck ES which is made up of a dielectric body to cover a surface of the chuck main body having electrodes, includes the steps of: obtaining a sintered body by compression-forming raw material powder (or raw meal) into a predetermined shape and then sintering the same; forming, by polishing, such a surface of the sintered body as will come into contact with a substrate to be attracted, into a predetermined surface roughness and flatness; and performing blast processing for selectively removing only ready-to-be-separated particles that come into existence on the surface as a result of the polishing.

Abstract: The electrostatic chuck is made up of: a chuck main body having electrodes; a chuck plate of a dielectric material and having a rib portion with which a peripheral edge portion of the substrate is capable of coming into surface contact, and a plurality of supporting portions which are vertically disposed at a predetermined distance from one another in an inner space enclosed by the rib portion; and a gas introduction means for introducing a predetermined gas into the inner space.

Abstract: An amorphous carbon rod (13) is formed in contact with a catalyst fine particle (11). The fine particle (11) is liquefied by heat treatment, and moved along the amorphous carbon rod (13). The trail of the movement is converted to a carbon nanotube.

Abstract: A CNT channel layer of a transistor is cut along a direction perpendicular to the channel to form a plurality of CNT patches, which are used to connect between a source and a drain. The arrangement of the CNT channel layer formed of a plurality of CNT patches can increase the probability that part of CNT patches becomes a semiconductive CNT patch. Since part of a plurality of CNT patches forming the channel layer is formed of a semiconductive CNT patch, a transistor having a good on/off ratio can be provided.

Abstract: Disclosed is a switching element provided with a gate dielectric film and an active layer disposed in contact with the gate dielectric film. The active layer includes carbon nanotubes, and the gate dielectric film includes non-conjugated polymer containing an aromatic ring in a side chain.

Abstract: A metal fine particle is adhere to a predetermined location on a substrate. A resist film containing a metallic compound dispersed therein is formed on a substrate (101). A patterning of the resist film is conducted by a lithography. The substrate (101) having the patterned resist formed thereon is heated within an oxygen atmosphere to adhere a metal fine particle (106) to the surface of the substrate (101), while removing the resin in the patterned resist.

Abstract: A semiconductor device having good switching characteristics even metallic CNTs are included and a manufacturing method thereof are provided. The semiconductor device includes a source electrode; a drain electrode; and a channel layer formed between the source electrode and the drain electrode and including a carbon nanotube group. The carbon nanotube group includes conductive carbon nanotubes having a characteristic of a conductive material and semiconductive carbon nanotubes having a characteristic of a semiconductive material. The density of the carbon nanotube group is the density where the source electrode and the drain electrode are connected to each other through all of the carbon nanotube group and not connected to each other only through the conductive carbon nanotubes.

Abstract: To provide a technique which cleans an attracting face of a mechanism for electrostatically attracting an object to be processed inside a vacuum processing apparatus and keeps its attracting force constant. The method of the present invention is for cleaning an attracting face of a hot plate which holds the object to be processed inside a vacuum processing chamber through electrostatic attraction. The invention method includes a step of cleaning the attracting face of the hot plate by applying a high-frequency electric power of 13.56 MHz to a metallic base arranged under and near the hot plate in a state in which a cleaning gas is introduced into the vacuum processing chamber.

Abstract: The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.

Abstract: This copper alloy contains at least zirconium in an amount of not less than 0.005% by weight and not greater than 0.5% by weight, includes a first grain group including grains having a grain size of not greater than 1.5 ?m, a second grain group including grains having a grain size of greater than 1.5 ?m and less than 7 ?m, the grains having a form which is elongated in one direction, and a third grain group including grains having a grain size of not less than 7 ?m, and also the sum of ? and ? is greater than ?, and ? is less than ?, where ? is a total area ratio of the first grain group, ? is a total area ratio of the second grain group, and ? is a total area ratio of the third grain group, based on a unit area, and ?+?+?=1.

Abstract: This copper alloy contains at least zirconium in an amount of not less than 0.005% by weight and not greater than 0.5% by weight, includes a first grain group including grains having a grain size of not greater than 1.5 ?m, a second grain group including grains having a grain size of greater than 1.5 ?m and less than 7 ?m, the grains having a form which is elongated in one direction, and a third grain group including grains having a grain size of not less than 7 ?m, and also the sum of ? and ? is greater than ?, and ? is less than ?, where ? is a total area ratio of the first grain group, ? is a total area ratio of the second grain group, and ? is a total area ratio of the third grain group, based on a unit area, and ?+?+?=1.

Abstract: This copper alloy contains at least zirconium in an amount of not less than 0.005% by weight and not greater than 0.5% by weight, includes a first grain group including grains having a grain size of not greater than 1.5 ?m, a second grain group including grains having a grain size of greater than 1.5 ?m and less than 7 ?m, the grains having a form which is elongated in one direction, and a third grain group including grains having a grain size of not less than 7 ?m, and also the sum of ? and ? is greater than ?, and ? is less than ?, where ? is a total area ratio of the first grain group, ? is a total area ratio of the second grain group, and ? is a total area ratio of the third grain group, based on a unit area, and ?+?+?=1.

Abstract: A metal fine particle is adhere to a predetermined location on a substrate. A resist film containing a metallic compound dispersed therein is formed on a substrate (101). A patterning of the resist film is conducted by a lithography. The substrate (101) having the patterned resist formed thereon is heated within an oxygen atmosphere to adhere a metal fine particle (106) to the surface of the substrate (101), while removing the resin in the patterned resist.

Abstract: An amorphous carbon rod (13) is formed in contact with a catalyst fine particle (11). The fine particle (11) is liquefied by heat treatment, and moved along the amorphous carbon rod (13). The trail of the movement is converted to a carbon nanotube.

Abstract: The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.

Abstract: A plated material reduces insertion and withdrawal forces when used in a connector. A terminal member for a connector and a connector therewith are also provided. The plated material comprises a substrate 3 made of Cu or a Cu alloy and a metal plating layer 6 formed on the surface of the substrate 3. A soft region 6A spreading in a network-shape and a hard region 6B surrounded by the network of the soft region 6A coexists in the metal plating layer 6. The soft region 6A has a Vickers hardness of 20 to 250, while the hard region 6B has a Vickers hardness of 60 to 700, which is at least 30 higher than that of the soft region 6A. An average size of the network of the soft region 6A is from 5 to 500 ?m.