Abstract: An image processing apparatus includes an area specifying unit that specifies a closed area emitting fluorescence in a fluorescence image as a cell area in a cell population including a number of dispersed cells. The fluorescence image is generated from fluorescence emitted by the cell population irradiated with a scanning laser beam. The apparatus also includes a nucleus data removing unit that removes data corresponding to a nucleus in the cell area; an overlapping cell specifying unit that specifies an overlapping cell area where cells overlap, based on a fluorescence intensity of a cytoplasm portion corresponding to an image where the data corresponding to the nucleus is removed; and an analyzed image generating unit that generates an analyzed image where data of the overlapping cell area is removed from the fluorescence image.

Abstract: In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.

Abstract: A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.

Abstract: According to one embodiment, a plurality of light receiving elements photoelectrically convert light signals having information signals, respectively. A plurality of first amplification circuits amplify currents of electric signals from the respective light receiving elements. A selecting section selectively outputs one of signals amplified by the plurality of first amplification circuits. A second amplification circuit amplifies a voltage of the signal output from the selecting section, and supplies the signal to the outside.

Abstract: Disclosed herewith is a data recording and reading equipment capable of reducing laser noise easily. At first, a laser beam source that can reduce the laser noise when reading data from a subject optical disk is obtained. A modulator capable of varying laser attenuation with a voltage is disposed so as to precede the laser, thereby the laser noise when reading data from the optical disk can be reduced without lowering the laser power when in writing.

Abstract: In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.

Abstract: An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing/demultiplexing device are prepared. The wavelength multiplexing/demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing/demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing/demultiplexing operations can be carried out.

Abstract: An optical module comprising: a submount provided on a CAN stem; light-emitting device and a light-receiving device; a CAN cap or package; and an optical multiplexer/demultiplexer having a wavelength selective filter on a substrate that has transmissivity to passing light and a mirror, where an extending direction of the optical multiplexer/demultiplexer is fixed in the CAN cap or the package being tilted by an angle ? (??2N?, N=0, 1, 2, . . . ) in a two-dimensional cross section with respect to one surface of an optical device mounting board, outgoing light from the light-emitting device passes through the wavelength selective filter and the substrate and enters an optical fiber outside the cap, and outgoing light from the optical fiber enters the optical multiplexer/demultiplexer and is reflected by the wavelength selective filter and further reflected by the mirror, and then exits the optical multiplexer/demultiplexer to enter the light-receiving device.

Abstract: There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof.

Abstract: Disclosed herewith is a data recording and reading equipment capable of reducing laser noise easily. At first, a laser beam source that can reduce the laser noise when reading data from a subject optical disk is obtained. A modulator capable of varying laser attenuation with a voltage is disposed so as to precede the laser, thereby the laser noise when reading data from the optical disk can be reduced without lowering the laser power when in writing.

Abstract: A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.

Abstract: An optical multiplexer/demultiplexer comprising a member, of which first and second opposite planar surfaces are parallel to each other. The member includes therein a void, of which third and fourth opposite planar surfaces are in parallel to each other. An extension of a first line lying on the first planar surface and an extension of a third line lying on the third planar surface intersect each other in a cross section including the void of the member, a smaller one of intersection angles thereof being ?1. An extension of a second line lying on the second planar surface and an extension of a fourth line lying on the fourth planar surface intersect each other, a smaller one of intersection angles thereof being ?1. The third planar surface is provided on a part thereof with at least one high reflection coating film. The fourth planar surface is provided on a part thereof with at least one optical wavelength filter.

Abstract: It is an object of the present invention to realize a low cost laser light source capable of emitting several mW optical power while the operation current is reduced. In particular, the present invention concerns a 1.3 ?m wavelength band laser device suitable for several to several ten km short distance fiber optic transmission and also a less power consuming optical communication module in which such a laser is preferably mounted. As a laser structure which eliminates the necessity of adding an optical isolator by providing improved immunity to reflected light while lowering the operation current for less power consumption and not lowering the response speed, a short cavity laser which operates in multiple longitudinal modes is introduced. Especially, a angled mirror structure is formed at the laser's emitting edge to change the optical output direction so that the light is emitted from the top or bottom of the substrate.

Abstract: A scanning fluorescent microscope includes a light source which irradiates a sample with an exciting light pulse, and a splitter which splits fluorescent photons emitted from the sample excited by the exciting light pulse, in at least first and second groups. The scanning fluorescent microscope also includes first and second detectors which detect the fluorescent photons of the first and second group, respectively, first and second counters which count numbers of fluorescent photons detected by the detectors, respectively, first and second correcting units which perform a predetermined correction to the numbers of fluorescent photons, an adder adding the numbers of fluorescent photons corrected, and an operating unit which calculates a florescent lifetime based on resulting numbers from the adder.

Abstract: An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. AnInGaAs Player is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.

Abstract: An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.

Abstract: Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics. According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.

Abstract: A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.

Abstract: The semiconductor optical device is mounted junction down on a mounting plate via the solder metal of the mounting plate. The electrode of the semiconductor optical device facing the mounting plate is partially coated with a dielectric film and the dielectric film is in contact with the solder metal on the mounting plate. The reaction between the semiconductor optical device and the solder metal of the mounting plate can be suppressed without deteriorating the thermal conductivity between the semiconductor optical device and the mounting plate. Therefore, it is possible to improve the reliability of the semiconductor optical device mounted in the junction down form since diffusion of the solder metal into the semiconductor can be prevented.

Abstract: A composition for dissolving a titanium oxide, which comprises carbonic acid and/or a carbonate, hydrogen peroxide and water.