Patents by Inventor Masahiro Katayama

Masahiro Katayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10031392
    Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: July 24, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masataka Nakada, Masahiro Katayama, Seiji Yasumoto, Hiroki Adachi, Masataka Sato, Koji Kusunoki, Yoshiharu Hirakata
  • Publication number: 20180134178
    Abstract: Provided is a fuel cell system which includes a fuel cell that generates electric power by electrochemical reaction between hydrogen gas and oxidizing gas, and a fuel cell case that houses the fuel cell. A more fragile portion compared to the rest of the fuel cell case in terms of strength is provided in the fuel cell case along an outline of a given shape so that a depressurizing opening having the given shape is formed when internal pressure of the fuel cell case becomes higher than given pressure.
    Type: Application
    Filed: November 3, 2017
    Publication date: May 17, 2018
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masahiro KATAYAMA, Yuma TAKABATAKE
  • Publication number: 20180119588
    Abstract: A vehicle includes a fuel cell, and an exhaust-drain pipe configured to temporarily accumulate water and exhaust gas discharged from the fuel cell. The exhaust-drain pipe includes a drain port provided on a bottom face portion of the exhaust-drain pipe and configured to discharge water accumulated in the exhaust-drain pipe to outside the vehicle, and a division plate provided on the bottom face portion of the exhaust-drain pipe so as to extend in a direction perpendicular to the vehicle front-rear direction, and the drain port are placed on a vehicle front side relative to the division plate.
    Type: Application
    Filed: October 12, 2017
    Publication date: May 3, 2018
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Takanori OTSURA, Shigeaki MURATA, Masahiro KATAYAMA
  • Publication number: 20180102086
    Abstract: The number of lithography processes is reduced and a high-definition display device is provided. The display device includes a pixel portion and a driver circuit for driving the pixel portion. The pixel portion includes a first transistor and a pixel electrode electrically connected to the first transistor. The driver circuit includes a second transistor and a connection portion. The second transistor includes a metal oxide film, first and second gate electrodes that face each other with the metal oxide film positioned therebetween, source and drain electrodes over and in contact with the metal oxide film, and a first wiring connecting the first and second gate electrodes. The connection portion includes a second wiring on the same surface as the first gate electrode, a third wiring on the same surface as the source electrode and the drain electrode, and a fourth wiring connecting the second wiring and the third wiring.
    Type: Application
    Filed: October 5, 2017
    Publication date: April 12, 2018
    Inventors: Masahiro KATAYAMA, Daisuke KUROSAKI, Kenichi OKAZAKI, Junichi KOEZUKA
  • Patent number: 9929220
    Abstract: Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element formed over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.
    Type: Grant
    Filed: January 4, 2010
    Date of Patent: March 27, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Katayama, Shingo Eguchi, Yoshiaki Oikawa, Ami Nakamura, Satoshi Seo, Kaoru Hatano
  • Publication number: 20180083301
    Abstract: There is provided a fuel cell module comprising a fuel cell, a fuel cell auxiliary machine, and a module case configured to place the fuel cell and the fuel cell auxiliary machine therein. The module case comprises a first space in which the fuel cell is placed and a second space in which the fuel cell auxiliary machine is placed. The first space and the second space adjoin to each other via a partition plate. The partition plate includes a communicating hole that connects the first space and the second space and that is formed in an opening shape having a side or a diameter that is smaller than a width of a gap between the fuel cell and the partition plate.
    Type: Application
    Filed: August 16, 2017
    Publication date: March 22, 2018
    Inventors: Masahiko Morinaga, Masahiro Katayama
  • Patent number: 9911755
    Abstract: A semiconductor device includes a transistor including an insulating film, an oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film; a capacitor including a first light-transmitting conductive film over the insulating film, a dielectric film over the first light-transmitting conductive film, and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film. The dielectric film is the nitride insulating film, the oxide insulating film has a first opening over one of the pair of electrodes, the nitride insulating film has a second opening over the one of the pair of electrodes, and the second opening is on an inner side than the first opening.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: March 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroyuki Miyake, Hideaki Shishido, Masahiro Katayama, Kenichi Okazaki
  • Patent number: 9887299
    Abstract: A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: February 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Katayama, Kenichi Okazaki, Jun Koyama
  • Publication number: 20170373271
    Abstract: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.
    Type: Application
    Filed: September 8, 2017
    Publication date: December 28, 2017
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Kaoru HATANO, Masahiro KATAYAMA, Shingo EGUCHI, Yoshiaki OIKAWA, Ami NAKAMURA
  • Patent number: 9825057
    Abstract: To provide a display device in which plural kinds of circuits are formed over one substrate and plural kinds of transistors corresponding to characteristics of the plural kinds of circuits are provided. The display device includes a pixel portion and a driver circuit that drives the pixel portion over one substrate. The pixel portion includes a first transistor including a first oxide semiconductor film. The driver circuit includes a second transistor including a second oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film are formed over one insulating surface. A channel length of the first transistor is longer than a channel length of the second transistor. The channel length of the first transistor is greater than or equal to 2.5 micrometer.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: November 21, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masahiro Katayama
  • Publication number: 20170271520
    Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.
    Type: Application
    Filed: May 31, 2017
    Publication date: September 21, 2017
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masataka NAKADA, Masahiro KATAYAMA
  • Patent number: 9768410
    Abstract: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: September 19, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kaoru Hatano, Masahiro Katayama, Shingo Eguchi, Yoshiaki Oikawa, Ami Nakamura
  • Publication number: 20170263497
    Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.
    Type: Application
    Filed: May 30, 2017
    Publication date: September 14, 2017
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masahiro KATAYAMA
  • Publication number: 20170236846
    Abstract: A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.
    Type: Application
    Filed: May 5, 2017
    Publication date: August 17, 2017
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi OKAZAKI, Masataka NAKADA, Masahiro KATAYAMA
  • Patent number: 9705002
    Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: July 11, 2017
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masataka Nakada, Masahiro Katayama
  • Publication number: 20170194503
    Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.
    Type: Application
    Filed: March 17, 2017
    Publication date: July 6, 2017
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro KATAYAMA, Chieko MISAWA, Yuka YOKOYAMA, Hironobu TAKAHASHI, Kenichi OKAZAKI
  • Patent number: 9673234
    Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.
    Type: Grant
    Filed: May 11, 2016
    Date of Patent: June 6, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masahiro Katayama
  • Patent number: 9666605
    Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: May 30, 2017
    Assignee: Semiconductor Energy Laboratory Co., LTD.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masahiro Katayama, Masataka Nakada
  • Patent number: 9659968
    Abstract: Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion 104 and a driver circuit portion 106 outside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layer 122 which covers the pixel transistor and includes an inorganic material, a second insulating layer 124 which is over the first insulating layer and includes an organic material, and a third insulating layer 128 which is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.
    Type: Grant
    Filed: April 3, 2014
    Date of Patent: May 23, 2017
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Junichi Koezuka, Masahiro Katayama, Yukinori Shima, Kenichi Okazaki, Takuya Matsuo, Shigeyasu Mori, Yosuke Kanzaki, Hiroshi Matsukizono
  • Patent number: 9653487
    Abstract: A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: May 16, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masataka Nakada, Masahiro Katayama