Abstract: The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

Abstract: A semiconductor device includes an oxide semiconductor film having a corundum structure or containing as a major component gallium oxide or a mixed crystal of gallium oxide, and the semiconductor device is a normally-off semiconductor device with a threshold voltage that is 3V or more.

Abstract: A semiconductor device including a semiconductor element is provided. The semiconductor element includes a saturation current suppression layer formed above a drift layer and including electric field block layers arranged in a stripe manner and JFET portions arranged in a stripe manner. The electric field block layers and the JFET portions are alternately arranged. The semiconductor element includes trench gate structures. A longer direction of the trench gate structure intersects with a longer direction of the electric field block layer and a longer direction of JFET portion. The JFET portion includes a first layer having a first conductivity type impurity concentration larger than the drift layer and a second layer formed above the first layer and having a first conductivity type impurity concentration smaller than the first layer.

Abstract: A crystalline oxide film with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide film including a first crystal axis, a second crystal axis; a metal oxide as a major component that includes gallium, a first side; and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

Abstract: A semiconductor device with an enhanced semiconductor characteristics that is useful for power devices. A semiconductor device including: a semiconductor region; a barrier electrode arranged on the semiconductor region; and two or more adjustment regions of barrier height that are on a surface of the semiconductor region and arranged between the semiconductor region and the barrier electrode, the adjustment regions are configured such that barrier height at an interface between the adjustment regions and the barrier electrode is higher than barrier height at an interface between the semiconductor region and the barrier electrode.

Abstract: A printing apparatus includes a transfer section and a non-transfer section configured to be moved cyclically, a print unit configured to form an ink image on the transfer section, a transfer unit configured to perform a transfer operation and a liquid absorbing unit configured to absorb a liquid component from the ink image. The liquid absorbing unit includes a liquid absorbing sheet, a driving unit configured to move the sheet cyclically, and a displacing unit configured to displace the sheet between a contact state in which the sheet can contact the transfer section and a retracted state. When the non-transfer section is located at a liquid absorbing position where the sheet and the transfer section contact with each other, the displacing unit displaces the sheet from the retracted state to the contact state.

Abstract: A printing apparatus according to an embodiment of this invention brings, out of a cleaning unit that cleans a transfer member in contact with a transfer member and an application unit that applies a reactive liquid with ink to the transfer member, the cleaning unit into contact with the transfer member to clean the transfer member by the cleaning unit at the start of the printing operation. Alternatively, out of the application unit and an absorbing unit that absorbs a liquid component from the reactive liquid applied by the application unit in contact with the transfer member, the printing apparatus brings the application unit into contact with the transfer member to apply the reactive liquid by the application unit.

Abstract: There is provided with a printing apparatus. A transfer member rotates and moves cyclically. A transfer unit transfers an image formed on the transfer member to a print medium. A liquid absorbing unit absorbs a liquid component from the image on the transfer member. A liquid absorbing member has a first surface and a second surface. A liquid removal section includes a first rotating body and a second rotating body. A liquid removal section removes a liquid contained in the liquid absorbing member from a nipped portion by the first rotating body and the second rotating body. A liquid applying section applies a liquid to a position on the first surface. The position is on an upstream side of the nipped portion with respect to a direction of rotation and movement of the liquid absorbing member.

Abstract: A protective sheet is to be laid on an endless belt sheet and covers a surface of the endless belt sheet to protect the surface. When the protective sheet is laid on the endless belt sheet, the bending stiffness of the protective sheet is lower in the circumferential direction of the endless belt sheet than in the width direction that is orthogonal relative to the circumferential direction. Thus, the risk of being bent and damaged of the endless belt sheet is minimized and the cumbersomeness of the operation of replacing the endless belt sheet is remarkably reduced by using such a protective sheet.

Abstract: A printing apparatus includes an image forming unit that forms an ink image, a transfer unit that transfers the ink image formed on a transfer member to a print medium in a transfer operation, and a liquid absorbing member that absorbs a liquid component from the ink image before the transfer operation. A recovery unit recovers absorption performance of the liquid absorbing member by applying a moisturizing liquid to the liquid absorbing member. A first estimation unit estimates, based on print data, an ink discharge amount of ink to form the ink image, and a second estimation unit estimates a liquid amount of the liquid component to be absorbed by the liquid absorbing member from the estimated ink discharge amount. In addition, a control unit controls an application amount of the moisturizing liquid by the recovery unit based on a result of estimation by the second estimation unit.

Abstract: A silicon carbide semiconductor device includes: a main cell region; a sense cell region; a MOSFET arranged in each of the main cell region and the sense cell region and disposed in a semiconductor substrate having a high impurity concentration layer and a drift layer; an element isolation layer arranged between the main cell region and the sense cell region, and surrounding the sense cell region; and a plurality of electric field relaxation layers arranged between the main cell region and the sense cell region. The MOSFET includes: a base region; a source region; a plurality of deep layers; a trench gate structure; a source electrode; and a drain electrode. The deep layers and the electric field relaxation layers are arranged in a stripe pattern at a predetermined interval.

Abstract: A printing apparatus includes a transfer member, a print unit configured to form an ink image on the transfer member, a transfer unit configured to perform a transfer operation, and a liquid absorption unit configured to absorb a liquid component from the ink image on the transfer member before the transfer operation. The liquid absorption unit includes a liquid absorbing sheet, a driving unit configured to move the sheet cyclically, a displacing unit configured to displace the 1 sheet between a contact state in which the liquid absorbing sheet contacts the transfer member and a retracted state, and a recovery unit configured to perform a recovery operation of recovering liquid absorption performance of the sheet. The recovery operation is performed by the recovery unit while moving the sheet cyclically by the driving unit when the sheet is in the retracted state.

Abstract: A silicon carbide semiconductor device includes: a main cell region; a sense cell region; a MOSFET arranged in each of the main cell region and the sense cell region and disposed in a semiconductor substrate having a high impurity concentration layer and a drift layer; an element isolation layer arranged between the main cell region and the sense cell region, and surrounding the sense cell region; and a plurality of electric field relaxation layers arranged between the main cell region and the sense cell region. The MOSFET includes: a base region; a source region; a plurality of deep layers; a trench gate structure; a source electrode; and a drain electrode. The deep layers and the electric field relaxation layers are arranged in a stripe pattern at a predetermined interval.

Abstract: A printing apparatus includes at least one transfer section, a print unit forming an ink image on the transfer section, a transfer unit performing a transfer operation of transferring, to a print medium, and a liquid absorbing unit absorbing a liquid component from the ink image. The liquid absorbing unit includes a liquid absorbing sheet moved cyclically, and a displacing unit displacing the sheet between a contact state and a retracted state. The printing apparatus further includes an acceleration control unit controlling, if the sheet is displaced from the retracted state to the contact state, an acceleration operation of the transfer section and the sheet, and a determination unit determining an acceleration operation start portion which is located at a liquid absorbing position where the sheet contacts the transfer section when the acceleration control unit starts the acceleration operation.

Abstract: A liquid absorbing apparatus for absorbing a liquid component from an ink image formed on a transfer member before transferring the ink image to a print medium, includes a liquid absorbing member configured to absorb the liquid component, a support unit configured to support the liquid absorbing member to be movable cyclically; and at least one recovery unit arranged in a moving path of the liquid absorbing member and configured to recover liquid absorption performance of the liquid absorbing member.

Abstract: A printing apparatus includes a transfer member that cyclically passes through a formation area of an ink image and a transfer area of the ink image, a print unit that forms the ink image on the transfer member, and a transfer unit that transfers the ink image from the transfer member to a print medium. A liquid absorption unit absorbs a liquid component from the ink image on the transfer member, before the transfer by the transfer unit, and includes a liquid absorbing member that absorbs the liquid component, a support unit that supports the liquid absorbing member to be movable cyclically, an applying unit that applies a moisturizing liquid, and a supply unit that supplies the moisturizing liquid to the applying unit. The printing apparatus also includes control unit that controls a supply amount of the moisturizing liquid supplied to the applying unit by the supply unit.

Abstract: Salivary biomarker characterized as low-molecular-weight compounds named metabolites or combinations of these biomarkers are used for detecting cancers. The salivary biomarker for cancer can be, for example, a combination of creatinine, N1-acetylspermidine, ?-aminoadipic acid, N-acetylneuraminic acid, and 1,3-diaminopropane. Due to this configuration, the early detection of pancreatic cancer, breast cancer, oral cancer, and the like is possible in a healthy subject even with saliva having large concentration fluctuations.

Abstract: A printing apparatus includes a liquid absorption unit configured to absorb a liquid component from an ink image formed on a transfer member before transferring the ink image to a print medium. The liquid absorption unit includes a liquid absorbing member configured to absorb the liquid component, a support unit configured to support the liquid absorbing member to be movable cyclically, an applying unit arranged in a moving path of the liquid absorbing member and configured to apply a moisturizing liquid while contacting the liquid absorbing member, and a supply unit configured to supply the moisturizing liquid to the applying unit. The printing apparatus includes a control unit configured to control a supply amount of the moisturizing liquid to the applying unit supplied by the supply unit.

Abstract: A semiconductor device includes: a drain region; a drift layer made of a first conductivity type semiconductor with lower impurity concentration than the drain region; a base region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity type semiconductor with higher concentration; a trench structure having a first gate insulation film and a first gate electrode arranged at an opening side of the trench and to be deeper than the base region, and a bottom part insulation film; a source electrode electrically connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The drain is arranged to be deeper than the base region. The first gate insulation film is made of higher dielectric insulation material than the bottom part insulation film.