Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer. The i-type semiconductor layer includes an oxide semiconductor as a major component. The oxide semiconductor that is included as the major component of the i-type semiconductor layer includes at least one metal selected from among aluminum, indium, and gallium.

Abstract: A printing apparatus includes a transfer member, a print unit configured to form an ink image on the transfer member, a transfer unit configured to perform a transfer operation, and a liquid absorption unit configured to absorb a liquid component from the ink image on the transfer member before the transfer operation. The liquid absorption unit includes a liquid absorbing sheet, a driving unit configured to move the sheet cyclically, a displacing unit configured to displace the 1 sheet between a contact state in which the liquid absorbing sheet contacts the transfer member and a retracted state, and a recovery unit configured to perform a recovery operation of recovering liquid absorption performance of the sheet. The recovery operation is performed by the recovery unit while moving the sheet cyclically by the driving unit when the sheet is in the retracted state.

Abstract: A printing apparatus includes a transfer section and a non-transfer section configured to be moved cyclically, a print unit configured to form an ink image on the transfer section, a transfer unit configured to perform a transfer operation and a liquid absorbing unit configured to absorb a liquid component from the ink image. The liquid absorbing unit includes a liquid absorbing sheet, a driving unit configured to move the sheet cyclically, and a displacing unit configured to displace the sheet between a contact state in which the sheet can contact the transfer section and a retracted state. When the non-transfer section is located at a liquid absorbing position where the sheet and the transfer section contact with each other, the displacing unit displaces the sheet from the retracted state to the contact state.

Abstract: A printing apparatus includes at least one transfer section, a print unit forming an ink image on the transfer section, a transfer unit performing a transfer operation of transferring, to a print medium, and a liquid absorbing unit absorbing a liquid component from the ink image. The liquid absorbing unit includes a liquid absorbing sheet moved cyclically, and a displacing unit displacing the sheet between a contact state and a retracted state. The printing apparatus further includes an acceleration control unit controlling, if the sheet is displaced from the retracted state to the contact state, an acceleration operation of the transfer section and the sheet, and a determination unit determining an acceleration operation start portion which is located at a liquid absorbing position where the sheet contacts the transfer section when the acceleration control unit starts the acceleration operation.

Abstract: A printing apparatus according to an embodiment of this invention brings, out of a cleaning unit that cleans a transfer member in contact with a transfer member and an application unit that applies a reactive liquid with ink to the transfer member, the cleaning unit into contact with the transfer member to clean the transfer member by the cleaning unit at the start of the printing operation. Alternatively, out of the application unit and an absorbing unit that absorbs a liquid component from the reactive liquid applied by the application unit in contact with the transfer member, the printing apparatus brings the application unit into contact with the transfer member to apply the reactive liquid by the application unit.

Abstract: A semiconductor device includes: a drain region made of a first or second conductivity type semiconductors; a drift layer made of the first conductivity type semiconductor; a base region made of the second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity semiconductor with higher concentration; a trench gate structure having upper and lower gate structures; a source electrode connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The upper gate structure is inside the trench at an upper side, and includes a first gate insulation film and a first gate electrode. The lower gate structure is inside the trench at a lower side, and includes a second gate insulation film made of higher dielectric insulation material and a second gate electrode.

Abstract: According to an embodiment of this invention, liquid absorption performance of a liquid absorbing member is satisfactorily maintained while suppressing utilization of a moisturizing liquid. More specifically, before an ink image formed on a transfer member by ink discharged from a printhead is transferred, a cyclically movable liquid absorbing member absorbs a liquid component from the ink image formed on the transfer member. On the other hand, a recovery unit arranged on a moving path of the liquid absorbing member recovers absorption performance of the liquid absorbing member by applying the moisturizing liquid to the liquid absorbing member. When applying the moisturizing liquid, a condition on the surface of the liquid absorbing member is estimated and based on a result of the estimation, an application amount of the moisturizing liquid by the recovery unit is controlled.

Abstract: A printing apparatus includes a liquid absorption unit configured to absorb a liquid component from an ink image formed on a transfer member before transferring the ink image to a print medium. The liquid absorption unit includes a liquid absorbing member configured to absorb the liquid component, a support unit configured to support the liquid absorbing member to be movable cyclically, an applying unit arranged in a moving path of the liquid absorbing member and configured to apply a moisturizing liquid while contacting the liquid absorbing member, and a supply unit configured to supply the moisturizing liquid to the applying unit. The printing apparatus includes a control unit configured to control a supply amount of the moisturizing liquid to the applying unit by the supply unit.

Abstract: A printing apparatus includes a transfer drum including a transfer section and a non-transfer section which are moved cyclically, a print unit forming an ink image by discharging ink to the transfer section, a transfer unit transferring the ink image to a print medium, liquid absorbing member absorbing a liquid component from the ink image on the transfer section, a driving unit moving the liquid absorbing member, and a control unit. When a position at which the liquid absorbing member absorbs the liquid component from the ink image on the transfer section is defined as a liquid absorbing position, the control unit controls the driving unit such that a predetermined portion in which liquid absorbing performance of the liquid absorbing member degrades passes through the liquid absorbing position while the non-transfer section passes through the liquid absorbing position.

Abstract: A semiconductor device is provided with a semiconductor substrate and a trench gate. The semiconductor substrate is provided with a drift region of a first conductive type, wherein the drift region is in contact with the trench gate; a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate; a source region of the first conductive type, wherein the source region is disposed above the body region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate; and a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate.

Abstract: A semiconductor device includes: a drain region made of a first or second conductivity type semiconductors; a drift layer made of the first conductivity type semiconductor; a base region made of the second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity semiconductor with higher concentration; a trench gate structure having upper and lower gate structures; a source electrode connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The upper gate structure is inside the trench at an upper side, and includes a first gate insulation film and a first gate electrode. The lower gate structure is inside the trench at a lower side, and includes a second gate insulation film made of higher dielectric insulation material and a second gate electrode.

Abstract: A semiconductor device includes: a drain region; a drift layer made of a first conductivity type semiconductor with lower impurity concentration than the drain region; a base region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity type semiconductor with higher concentration; a trench structure having a first gate insulation film and a first gate electrode arranged at an opening side of the trench and to be deeper than the base region, and a bottom part insulation film; a source electrode electrically connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The drain is arranged to be deeper than the base region. The first gate insulation film is made of higher dielectric insulation material than the bottom part insulation film.

Abstract: In a plane view of the front surface of the semiconductor substrate, the source region and the first contact region are arranged adjacent to each other in a direction along the gate trench in an area being in contact with a side surface of the gate trench, and the second contact region is arranged adjacent to the source region and the first contact region in an area apart from the gate trench. The impurity concentration of the first contact region is lower than the impurity concentration of the second contact region.

Abstract: A switching device includes first-third semiconductor layers, a gate insulating film, and a gate electrode. The first semiconductor layer is of a first conductivity type. The second semiconductor layer is of a second conductivity type and in contact with the first semiconductor layer. The third semiconductor layer is of the first conductivity type, in contact with the second semiconductor layer. The gate insulating film covers a surface of the second semiconductor layer in a range in which the second semiconductor layer separates the first semiconductor layer from the third semiconductor layer. The gate electrode faces the second semiconductor layer via the gate insulating film. The gate electrode includes a fourth semiconductor layer covering a surface of the gate insulating film; and a fifth semiconductor layer having a bandgap different from a bandgap of the fourth semiconductor layer and covering a surface of the fourth semiconductor layer.

Abstract: An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

Abstract: A switching circuit disclosed, herein, includes a main MOSFET 12, a control MOSFET 14, and a diode 16. The main MOSFET is formed in a SiC semiconductor layer. A channel type of the main MOSFET is a first conductivity type. A channel type of the control MOSFET is a second conductivity type. A source of the control MOSFET is connected to-a gate of the main MOS-FET. A cathode of the diode is connected to a gate of one of the main MOSFET and the control MOSFET. An anode of the diode is connected to a gate of the other of the main MOSFET and the control MOSFET. A channel type of the one is an n-type. A channel type of the other is a p-type.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: A compound superconducting wire 10 includes a reinforcement portion 12 and a compound superconductor 11. In the reinforcement portion 12, an assembly of plural reinforcement elements 4 are disposed. The reinforcement elements 4 each include plural reinforcement filaments 1 disposed in a stabilizer 2, and a stabilizing layer 3 at the outer periphery thereof. The reinforcement filaments 1 each mainly contain one or more metals selected from the group consisting of Nb, Ta, V, W, Mo, Fe, and Hf, an alloy consisting of two or more metals selected from the aforementioned group, or an alloy consisting of copper and one or more metals selected from the aforementioned group.

Abstract: A switching device includes first-third semiconductor layers, a gate insulating film, and a gate electrode. The first semiconductor layer is of a first conductivity type, The second semiconductor layer is of a second conductivity type and in contact with the first semiconductor layer. The third semiconductor layer is of the first conductivity type, in contact with the second semiconductor layer. The gate insulating film covers a surface of the second semiconductor layer in a range in which the second semiconductor layer separates the first semiconductor layer from the third semiconductor layer. The gate electrode faces the second semiconductor layer via the gate insulating film. The gate electrode includes a fourth semiconductor layer covering a surface of the gate insulating film; and a fifth semiconductor layer having a bandgap different from a bandgap of the fourth semiconductor layer and covering a surface of the fourth semiconductor layer.

Abstract: A semiconductor device formed on a silicon carbide substrate that has a front surface on which an electrode is provided and a back surface on which an electrode is provided includes a drain layer, a drift layer, a base layer, a gate electrode that is located in a trench that extends from the front surface into the drift layer and is insulated by an insulating film, a source layer, a buried layer that is provided between the drift layer and the base layer and is formed such that the depth from the front surface to an end thereof on the side of the drift layer is greater than the depth from the front surface to a distal end of the trench, and a first epitaxial layer that is provided between the buried layer and the base layer and has a higher impurity concentration than the buried layer.