Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.

Abstract: A battery packet (50) comprises a battery case (51) formed by processing a battery case forming laminated sheet (10), a battery 50a contained in the battery case (51), and tabs (59, 60) extending outside from the battery case (51). The battery case forming laminated sheet (10) is formed by laminating a first base film layer (1a), i.e., an outermost layer, a metal foil layer (2), and a heat-adhesive resin layer (3) in that order. The first base film layer (1a) is a biaxially oriented polyethylene terephthalate resin film or a biaxially oriented nylon resin film. The metal foil layer (2) is an aluminum or copper foil. The heat-adhesive resin layer (3) is formed of a polyolefin resin, more preferably, of an acid-denatured polyolefin resin.

Abstract: A pulverizing apparatus for processing a powder material that can be readily melted by friction heat generated between the pulverizing apparatus and the material. The pulverizing apparatus includes a casing (2) having a cylindrical inner face, a rotor (10) driven to rotate about the axis X of the casing and having a rugged portion (10G) in its outer periphery, a gas source providing a gas flow for conveying the powder material from a feed opening (3) provided at an end of the casing along the an axial direction to a discharge opening (4) provided at the other axial end of the casing, a coolant source providing coolant to flow in a coolant passage (15) formed inside the rotor. The rugged portion is divided along the axial direction by an annular cutout portion (11) extending along the peripheral direction of the rotor.

Abstract: It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.

Abstract: A battery packet (50) comprises a battery case (51) formed by processing a battery case forming laminated sheet (10), a battery 50a contained in the battery case (51), and tabs (59, 60) extending outside from the battery case (51). The battery case forming laminated sheet (10) is formed by laminating a first base film layer (1a), i.e., an outermost layer, a metal foil layer (2), and a heat-adhesive resin layer (3) in that order. The first base film layer (1a) is a biaxially oriented polyethylene terephthalate resin film or a biaxially oriented nylon resin film. The metal foil layer (2) is an aluminum or copper foil. The heat-adhesive resin layer (3) is formed of a polyolefin resin, more preferably, of an acid-denatured polyolefin resin.

Abstract: A battery packet (50) comprises a battery case (51) formed by processing a battery case forming laminated sheet (10), a battery 50a contained in the battery case (51), and tabs (59, 60) extending outside from the battery case (51). The battery case forming laminated sheet (10) is formed by laminating a first base film layer (1a), i.e., an outermost layer, a metal foil layer (2), and a heat-adhesive resin layer (3) in that order. The first base film layer (1a) is a biaxially oriented polyethylene terephthalate resin film or a biaxially oriented nylon resin film. The metal foil layer (2) is an aluminum or copper foil. The heat-adhesive resin layer (3) is formed of a polyolefin resin, more preferably, of an acid-denatured polyolefin resin.

Abstract: It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

Abstract: It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is grown by a CVD method on the surface of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration. After that, a PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

Abstract: A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region.

Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first reflector of a first conductive type formed on the substrate; an active region formed on the first reflector; a second reflector of a second conductive type formed on the active region; and a current confining layer formed between the first reflector and the second reflector; and a metallic electrode that is formed on the second reflector, and is electrically connected to the second reflector. A conductive region with an anisotropy where a length in a longitudinal direction is different from a length in a short direction is formed in the current confining layer, and an opening defining a beam aperture is formed in the metallic electrode, and a diameter of the opening in the longitudinal direction is smaller than the length of the conductive region in the longitudinal direction.

Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed on the substrate; a current narrowing layer that is formed inside of the columnar structure, and has a conductive region surrounded by an oxidization region selectively oxidized; a first electrode that is formed at a top of the columnar structure, and defines a beam window; a first insulating film that covers the beam window; and a second insulating film of which a second refractive index is larger than the first refractive index. A reflection ratio in a second region where the second insulating film is formed is lower than a reflection ratio in a first region where only the first insulating film is formed.

Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.

Abstract: In order to manufacture the compound powder or the porous granulated substance in an efficient manner, a powder processing apparatus has an accumulating face on which the processing target powder is to be accumulated and a processing face disposed in opposition to the accumulating face and convexly curved, and a moving means for moving the accumulating face and the processing face along the accumulating face relative to each other. The apparatus comprises an excitement treatment means capable of applying an excitation energy to the processing target powder accumulated on the accumulating face from an excitation energy supplying portion disposed in opposition to the accumulating face or an oscillation means for oscillating the accumulating face or the processing face in a direction intersecting the accumulating face.

Abstract: An optical module includes a mounted member, a surface optical device and a positioning portion. The mounted member includes an inserted portion. The surface optical device includes a substrate, an optical axis, and an insertion portion. The optical axis is provided in a direction perpendicular to the substrate. The insertion portion has a step surface that is inserted into the inserted portion of the mounted member in a direction perpendicular to the optical axis so as to position the optical axis. The positioning portion is provided in the mounted member and positions an optical transmission member so that the optical transmission member is optically coupled to the surface optical device.

Abstract: A VCSEL includes a first conductivity-type first semiconductor mirror layer on a substrate, an active region thereon, a second conductivity-type second semiconductor mirror layer thereon, and a current confining layer in proximity to the active region. A mesa structure is formed such that at least a side surface of the current confining layer is exposed. The current confining layer includes a first semiconductor layer having an Al-composition and a second semiconductor layer having an Al-composition and being formed nearer to the active region than the first semiconductor layer does. Al concentration of the first semiconductor layer is higher than that of the second semiconductor layer. When oscillation wavelength of laser light is ?, optical thickness being sum of the thickness of the first and second semiconductor layers is ?/4. The first and second semiconductor layers are selectively oxidized from the side surface of the mesa structure.

Abstract: Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror.

Abstract: An optical waveguide includes a first waveguide region and a second waveguide region. The first waveguide region includes a first core, a first clad provided around the first core, and a light reflecting surface. The light reflecting surface has at least one function of (i) reflecting light from a longitudinal direction of the first core toward a direction crossing the longitudinal direction and (ii) reflecting light from the crossing direction toward the longitudinal direction of the first core. The second waveguide region continues from the first waveguide region. The second waveguide region that includes a second core, and a second clad provided around the second core. The second core of the second waveguide region is thinner than the first core of the first waveguide region. A total thickness of the second core and the second clad is smaller than that of the first core and the first clad.

Abstract: A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region.

Abstract: Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type formed thereon; and a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon. The reflective mirrors include a pair of a high refractive index layer and a low refractive index layer. The impurity concentration of the second reflective mirror is higher than that of the third reflective mirror. The band gap energy of the high refractive index layer in the second reflective mirror is greater than the energy of the wavelength of a resonator formed of the first reflective mirror, the active region, the current confining layer, the second reflective mirror, and the third reflective mirror.