Abstract: In order to manufacture the compound powder or the porous granulated substance in an efficient manner, a powder processing apparatus has an accumulating face on which the processing target powder is to be accumulated and a processing face disposed in opposition to the accumulating face and convexly curved, and a moving means for moving the accumulating face and the processing face along the accumulating face relative to each other. The apparatus comprises an excitement treatment means capable of applying an excitation energy to the processing target powder accumulated on the accumulating face from an excitation energy supplying portion disposed in opposition to the accumulating face or an oscillation means for oscillating the accumulating face or the processing face in a direction intersecting the accumulating face.

Abstract: A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region.

Abstract: In order to manufacture the compound powder or the porous granulated substance in an efficient manner, a powder processing apparatus has an accumulating face on which the processing target powder is to be accumulated and a processing face disposed in opposition to the accumulating face and convexly curved, and a moving means for moving the accumulating face and the processing face along the accumulating face relative to each other. The apparatus comprises an excitement treatment means capable of applying an excitation energy to the processing target powder accumulated on the accumulating face from an excitation energy supplying portion disposed in opposition to the accumulating face or an oscillation means for oscillating the accumulating face or the processing face in a direction intersecting the accumulating face.

Abstract: An optical module includes a mounted member, a surface optical device and a positioning portion. The mounted member includes an inserted portion. The surface optical device includes a substrate, an optical axis, and an insertion portion. The optical axis is provided in a direction perpendicular to the substrate. The insertion portion has a step surface that is inserted into the inserted portion of the mounted member in a direction perpendicular to the optical axis so as to position the optical axis. The positioning portion is provided in the mounted member and positions an optical transmission member so that the optical transmission member is optically coupled to the surface optical device.

Abstract: A VCSEL includes a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, a contact layer, each of the layers stacked on the substrate. The second semiconductor multilayer constitutes a resonator together with the active layer and the first semiconductor multilayer. A metal layer is formed on the contact layer. The metal layer includes an opening portion that defines a region that emits laser light. When oscillation wavelength of the laser light is ?, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is smaller than ?/4.

Abstract: Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type formed thereon; and a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon. The reflective mirrors include a pair of a high refractive index layer and a low refractive index layer. The impurity concentration of the second reflective mirror is higher than that of the third reflective mirror. The band gap energy of the high refractive index layer in the second reflective mirror is greater than the energy of the wavelength of a resonator formed of the first reflective mirror, the active region, the current confining layer, the second reflective mirror, and the third reflective mirror.

Abstract: Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror.

Abstract: A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region.

Abstract: A VCSEL includes a first conductivity-type first semiconductor mirror layer on a substrate, an active region thereon, a second conductivity-type second semiconductor mirror layer thereon, and a current confining layer in proximity to the active region. A mesa structure is formed such that at least a side surface of the current confining layer is exposed. The current confining layer includes a first semiconductor layer having an Al-composition and a second semiconductor layer having an Al-composition and being formed nearer to the active region than the first semiconductor layer does. Al concentration of the first semiconductor layer is higher than that of the second semiconductor layer. When oscillation wavelength of laser light is ?, optical thickness being sum of the thickness of the first and second semiconductor layers is ?/4. The first and second semiconductor layers are selectively oxidized from the side surface of the mesa structure.

Abstract: A surface emitting semiconductor laser array includes multiple light-emitting portions arranged in a one-dimensional or two-dimensional array, each of the light-emitting portions including, on a substrate, an active region and a current funneling portion between first and second reflection mirrors, and a light-emission aperture above the second reflection mirror, laser beams being simultaneously emitted from the multiple light-emitting portions. At least one of the multiple light-emitting portions has a near field pattern different from those of other light-emitting portions.

Abstract: A VCSEL includes a substrate, a first semiconductor multilayer of a first conductivity-type, an active layer, a second semiconductor multilayer of a second conductivity-type, a contact layer, each of the layers stacked on the substrate. The second semiconductor multilayer constitutes a resonator together with the active layer and the first semiconductor multilayer. A metal layer is formed on the contact layer. The metal layer includes an opening portion that defines a region that emits laser light. When oscillation wavelength of the laser light is ?, optical thickness T of the contact layer and a top layer of the second semiconductor multilayer that contacts with the contact layer is smaller than ?/4.

Abstract: In order to manufacture the compound powder or the porous granulated substance in an efficient manner, a powder processing apparatus has an accumulating face on which the processing target powder is to be accumulated and a processing face disposed in opposition to the accumulating face and convexly curved, and a moving means for moving the accumulating face and the processing face along the accumulating face relative to each other. The apparatus comprises an excitement treatment means capable of applying an excitation energy to the processing target powder accumulated on the accumulating face from an excitation energy supplying portion disposed in opposition to the accumulating face or an oscillation means for oscillating the accumulating face or the processing face in a direction intersecting the accumulating face.

Abstract: A formed article obtained by pressure forming a porous body-coated fiber includes an inorganic fiber and a porous body made of fine inorganic particles associated with one another in a ring-shaped or helical manner to form secondary particles. The inorganic fiber is coated with the porous body. Also provided is a formed article made from porous body-coated fiber on a porous body-coated particle. The porous body-coated particle includes a core particle and a porous body made of fine particles of a first inorganic compound associated with one another in ring-shaped or helical manner to form secondary particles. The core particle is coated with the porous body.

Abstract: A surface emitting semiconductor laser is formed from a substrate having a first mirror formed thereon. The first mirror includes semiconductor layers of a first conductivity type. A second mirror is formed over the substrate and includes semiconductor layers of a second conductivity type. An active region is disposed between the first and second mirrors, with a current confining layer being disposed between the first and second mirrors. A compound semiconductor layer is formed over the second mirror and an electrode is formed on the compound semiconductor layer. A protective film covers the compound semiconductor layer and partially covers the electrode. The electrode is formed by a lift-off process and uses an opening-pattern that is formed by plasma ashing.

Abstract: A method of forming a conductive pattern such as an electrode on a compound semiconductor layer includes the steps of forming a first organic layer on the compound semiconductor layer, forming a second layer on the first organic layer, the second layer being resistant to plasma ashing, forming a pattern including a first aperture in the second layer, forming a second aperture in the first organic layer by the plasma ashing of the first organic layer using a mask of the pattern including the first aperture to expose the compound semiconductor layer in the second aperture, depositing a conductive layer over a region including the compound semiconductor layer exposed in the second aperture and the second layer, and forming the conductive pattern on the compound semiconductor layer by a lift-off process.

Abstract: A surface emitting semiconductor laser array includes multiple light-emitting portions arranged in a one-dimensional or two-dimensional array, each of the light-emitting portions including, on a substrate, an active region and a current funneling portion between first and second reflection mirrors, and a light-emission aperture above the second reflection mirror, laser beams being simultaneously emitted from the multiple light-emitting portions. At least one of the multiple light-emitting portions has a near field pattern different from those of other light-emitting portions.

Abstract: The present invention provides a porous body-coated fiber comprising: an inorganic fiber; and a porous body comprising fine inorganic particles associated with one another in ring-shaped or helical manner to form secondary particles, wherein the inorganic fiber is coated with the porous body. Also provided is a porous body-coated particle comprising: a core particle comprising a second inorganic compound; and a porous body comprising fine particles of a first inorganic compound associated with one another in ring-shaped or helical manner to form secondary particles, wherein said core particle is coated with said porous body. Still further provided is a formed article using the porous body-coated fiber or the porous body-coated particle.

Abstract: A method of forming a conductive pattern such as an electrode on a compound semiconductor layer includes the steps of forming a first organic layer on the compound semiconductor layer, forming a second layer on the first organic layer, the second layer being resistant to plasma ashing, forming a pattern including a first aperture in the second layer, forming a second aperture in the first organic layer by the plasma ashing of the first organic layer using a mask of the pattern including the first aperture to expose the compound semiconductor layer in the second aperture, depositing a conductive layer over a region including the compound semiconductor layer exposed in the second aperture and the second layer, and forming the conductive pattern on the compound semiconductor layer by a lift-off process.

Abstract: A battery packet (50) comprises a battery case (51) formed by processing a battery case forming laminated sheet (10), a battery 50a contained in the battery case (51), and tabs (59, 60) extending outside from the battery case (51). The battery case forming laminated sheet (10) is formed by laminating a first base film layer (1a), i.e., an outermost layer, a metal foil layer (2), and a heat-adhesive resin layer (3) in that order. The first base film layer (1a) is a biaxially oriented polyethylene terephthalate resin film or a biaxially oriented nylon resin film. The metal foil layer (2) is an aluminum or copper foil. The heat-adhesive resin layer (3) is formed of a polyolefin resin, more preferably, of an acid-denatured polyolefin resin.

Abstract: The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity