Abstract: The present technology relates to a signal processing device, an imaging element, and an electronic apparatus configured so that a cost increase can be suppressed.

Abstract: While realizing a broad dynamic range, the present technology relates to a solid-state image pickup device and control method therefor, and electronic apparatus aiming at enabling an influence of PLS to be suppressed. The solid-state image pickup device includes a pixel array unit in which a plurality of pixels are arrayed. A portion of pixels in the pixel array unit are a unit pixel at least having one photoelectric conversion element and over flow integration capacitor. Further, the solid-state image pickup device includes one AD converter for one or more unit pixels in the pixel array unit. The present technology is applicable to, for example, the solid-state image pickup.

Abstract: A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.

Abstract: While realizing a broad dynamic range, the present technology relates to a solid-state image pickup device and control method therefor, and electronic apparatus aiming at enabling an influence of PLS to be suppressed. The solid-state image pickup device includes a pixel array unit in which a plurality of pixels are arrayed. A portion of pixels in the pixel array unit are a unit pixel at least having one photoelectric conversion element and over flow integration capacitor. Further, the solid-state image pickup device includes one AD converter for one or more unit pixels in the pixel array unit. The present technology is applicable to, for example, the solid-state image pickup.

Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state image pickup device, an electronic device, a method of controlling the comparator, a data writing circuit, a data reading circuit, and a data transferring circuit, capable of improving the determining speed of the comparator and reducing power consumption.

Abstract: The present disclosure relates to a solid state imaging device and an electronic device from which a holding unit for holding information in a pixel can be eliminated. When a charge distribution unit distributes a pixel signal SIG to a first ADC, a pixel signal representing only reflection light is divided for allocation. When the charge distribution unit distributes a pixel signal SIG to a second ADC, a pixel signal representing background light and reflection light (partial) is divided for allocation. When the charge distribution unit distributes a pixel signal SIG to a third ADC, a pixel signal representing background light and reflection light (the rest) is divided for allocation. During a period in which no signal is acquired, a discharge transistor functions as an overflow portion for releasing electrical charge. The present disclosure can be applied to, for example, a solid state imaging device used for an imaging device.

Abstract: There is provided a solid-state image sensor including a pixel circuit including a plurality of pixels and imaging a subject, a peripheral circuit provided in a vicinity of the pixel circuit and performing operation in regard to imaging, and a connection element electrically connecting, in initialization of the pixels, elements in the pixels to which a predetermined voltage is applied for initializing the pixels to the peripheral circuit with the predetermined voltage.

Abstract: A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.

Abstract: The present technology relates to a solid-state imaging device, a method of driving the solid-state imaging device, and an electronic apparatus by which pixels can be read effectively. The solid-state imaging device includes a readout unit that performs a common-source operation or a source follower operation with respect to pixels to read a signal for each column. According to a level of illumination, the readout unit performs a common-source readout operation to reset a floating diffusion region and read an electric charge transferred from a photoelectric transducer and held in the floating diffusion region, and performs a source follower readout operation to reset the floating diffusion region and read the electric charge transferred from the photoelectric transducer and held in the floating diffusion region. The present technology is applicable to a solid-state imaging device such as a CMOS image sensor.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus that are capable of suppressing reduction in sensitivity. A current comparison unit receives light incident on a pixel, performs photoelectric conversion to generate a voltage, compares a current generated from the voltage with reference to a first potential line and a reference current generated with reference to a second potential line, the first potential line being one of a power supply line and a grounding line, the second potential line being another one of the power supply line and the grounding line, and outputs a comparison. A feedback unit returns a signal to a source side in the current comparison unit when the current is generated, the signal using the comparison result by the current comparison unit. The feedback unit can perform standby control in the current comparison unit.

Abstract: The present technology relates to a signal processing device, an imaging element, and an electronic apparatus configured so that a cost increase can be suppressed.

Abstract: The present technology relates to an imaging device, a driving method, and an electronic apparatus capable of more quickly acquiring a high-quality image. In a pixel of a solid-state imaging device, a photoelectric conversion unit that performs a photoelectric conversion of incident light is disposed. An electric charge/voltage converting unit converts electric charge acquired by the photoelectric conversion unit into a voltage signal. A signal comparator compares a supplied reference signal with the voltage signal acquired by the electric charge/voltage converting unit and outputs a result of the comparison. A storage unit adaptively changes the conversion efficiency of the electric charge/voltage converting unit on the basis of a control signal acquired on the basis of a result of the comparison output from the signal comparator. The present technology can be applied to a solid-state imaging device.

Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.

Abstract: A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.

Abstract: The present technology relates to an imaging element, a driving method, and an electronic apparatus that can decrease a voltage and increase a saturation signal amount. In each pixel configuring a pixel array unit, a photodiode receiving light from a subject and performing photoelectric conversion on the light and a first charge accumulating unit accumulating charges generated by the photodiode are provided. A reset gate unit to initialize the first charge accumulating unit is connected to the first charge accumulating unit through a third transfer gate unit. When the first charge accumulating unit is initialized, a voltage is applied to gate electrodes of the third transfer gate unit and the reset gate unit and a positive voltage is applied to a well region provided with a pixel to assist voltage application. Thereby, initialization is appropriately performed and a reset level is suppressed low. As a result, a voltage can be decreased and a saturation signal amount can be increased.

Abstract: The present disclosure relates to an imaging element, a control method, and an imaging apparatus that enable an image of a higher image quality to be obtained. An imaging apparatus according to the present disclosure includes a plurality of comparing units that compare analog signals supplied from pixels including photoelectric conversion elements through a vertical signal line with reference signals of ramp waves having different inclinations and output comparison results, a plurality of counters that execute counts until the comparison results are inverted for the different comparing units and output count values as digital data, and a sample-and-hold unit that electrically cuts the vertical signal line and the comparing units and supplies the held analog signals to the comparing units while the comparing units execute the comparisons. The present disclosure can be applied to an imaging element, a control method, and an imaging apparatus.

Abstract: A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.

Abstract: There is provided a solid-state imaging device including a pixel array section having a plurality of unit pixels two-dimensionally arranged therein, the unit pixels including at least a photoelectric conversion section, a charge holding section, a transfer section, and a reset section, and a drive control section which controls driving of the unit pixels in a manner that a voltage as a signal level and a voltage as a reset level are each read out serially per row. The drive control section controls readout of the voltage of the charge holding section in accordance with initialization of the charge holding section performed by the reset section before the charge transfer by the transfer section.

Abstract: There is provided a solid-state image sensor including a pixel circuit including a plurality of pixels and imaging a subject, a peripheral circuit provided in a vicinity of the pixel circuit and performing operation in regard to imaging, and a connection element electrically connecting, in initialization of the pixels, elements in the pixels to which a predetermined voltage is applied for initializing the pixels to the peripheral circuit with the predetermined voltage.

Abstract: There is provided a solid-state image sensor including a pixel circuit including a plurality of pixels and imaging a subject, a peripheral circuit provided in a vicinity of the pixel circuit and performing operation in regard to imaging, and a connection element electrically connecting, in initialization of the pixels, elements in the pixels to which a predetermined voltage is applied for initializing the pixels to the peripheral circuit with the predetermined voltage.