Abstract: A semiconductor device includes a first wiring hoard, a second semiconductor chip, and a second seal. The first wiring board includes a first substrate, a first semiconductor chip, and a first seal. The first semiconductor chip is disposed on the first substrate. The first seal is disposed on the first substrate. The first seal surrounds the first semiconductor chip. The first seal has the same thickness as the first semiconductor chip. The second semiconductor chip is stacked over the first semiconductor chip. The first semiconductor chip is between the second semiconductor chip and the first substrate. The second semiconductor chip is greater in size in plan view than the first semiconductor chip. The second seal seals at least a first gap between the first semiconductor chip and the second semiconductor chip.

Abstract: A hydrodesulfurization catalyst is produced by pre-sulfurizing a hydrodesulfurization catalyst Y including a support containing silica, alumina and titania and at least one metal component supported thereon and selected from VIA and VIII groups of the periodic table (comprising at least Mo), in which the total area of the diffraction peak area indicating the crystal structure of anatase titania (101) planes and the diffraction peak area indicating the crystal structure of rutile titania (110) planes in the support, measured by X-ray diffraction analysis being ¼ or less of the alumina diffraction peak area assigned to ?-alumina (400) planes. The molybdenum is formed into molybdenum disulfide crystal disposed in layers on the support by the pre-sulfurization, and having an average length of longer than 3.5 nm and 7 nm or shorter in the plane direction and an average number of laminated layers of more than 1.0 and 1.9 or fewer.

Abstract: A semiconductor device includes a chip stacked body where a plurality of semiconductor chips are stacked, and penetration electrodes respectively formed in the semiconductor chips are electrically interconnected in stacking order of the semiconductor chips, a first support member that is disposed to face a first semiconductor chip formed in one end of the chip stacked body, and including electrodes electrically connected to the penetration electrodes of the first semiconductor chip, and a wiring board that is disposed to face a second semiconductor chip formed in an end opposed to the one end of the chip stacked body, and including external electrodes on a surface opposed to a surface facing the second semiconductor chip that is to be electrically connected to the penetration electrodes of the second semiconductor chip.

Abstract: An image taking apparatus according to an aspect of the invention comprises: an image pickup device which picks up an object image and outputs the picked-up image data; a face detection device which detects human faces in the image data; a face-distance calculating device which calculates the distance between the faces among a plurality of faces detected by the face detection device; and a controlling device which controls the image pickup device to start shooting, after a shooting instruction is issued, in the case where the distance between the faces calculated by the face-distance calculating device is not greater than a first predetermined threshold value. The image taking apparatus allows shooting the moment the distance between the faces is close enough not be greater than to a predetermined threshold value.

Abstract: A method of forming a semiconductor device may include, but is not limited to, the following processes. A supporting substrate is prepared. The supporting substrate has a chip mounting area, and a plurality of penetrating slits around the chip mounting area. At least a stack of semiconductor chips is formed over the chip mounting area. A first sealing member is formed, which seals the stack of semiconductor chips without the first sealing member filling the plurality of penetrating slits.

Abstract: A method for forming a semiconductor device includes the following processes. A first semiconductor chip and a second semiconductor chip are stacked to form a stacked structure. A gap between the first and second semiconductor chips of the stacked structure is filled with a filler. A temperature of the stacked first and second semiconductor chips is kept more than room temperature from the stacking to the filing.

Abstract: Objects of the present invention are to provide a method for directly obtaining pluripotent stem cells which do not have tumorigenic property from body tissue and the thus obtained pluripotent stem cells. The present invention relates to SSEA-3 (+) pluripotent stem cells that can be isolated from body tissue.

Abstract: The present invention provides a hydrodesulfurization catalyst that exhibits a high desulfurization activity when used in hydrotreatment of hydrocarbon oil, in particular straight-run gas oil. The catalyst includes at least one type of metal component selected from Groups VIA and VIII in the periodic table, supported on a silica-titania-alumina support where the total of the diffraction peak area indicating the crystal structure of anatase titania (101) planes and the diffraction peak area indicating the crystal structure of rutile titania (110) planes is ¼ or less of the diffraction peak area indicating the aluminum crystal structure ascribed to ?-alumina (400) planes, as measured by X-ray diffraction analysis. The catalyst has (a) a specific surface area (SA) of 150 m2/g or greater, (b) a total pore volume (PVo) of 0.

Abstract: Provided is a film formation apparatus capable of causing a substrate and a mask to be in a substantially horizontal state and brought into intimate contact with each other without deforming mask apertures. A region inside a mask frame and outside aperture regions of a mask on a rear surface of a substrate is pressed by a pressing body in lines along two opposing sides of the substrate.

Abstract: A semiconductor device includes a chip stacked structure. The chip stacked structure may include, but is not limited to, first and second semiconductor chips. The first semiconductor chip has a first thickness. The second semiconductor chip has a second thickness that is thinner than the first thickness.

Abstract: A fatty acid salt of an alkyl quaternary ammonium is used as a novel surfactant which is a cationic surfactant having high detergency and low foaming property.

Abstract: A hydrotreating catalyst that exhibits excellent levels of both desulfurization activity and denitrification activity. The hydrotreating catalyst is prepared by supporting molybdenum, cobalt and nickel on a carrier comprising aluminum, silicon, phosphorus and boron, and then performing a presulfiding treatment, and has an average stacking number for molybdenum sulfide slab that is greater than 1.0 but not more than 1.9. Also, a process for producing a hydrotreating catalyst that enables a hydrotreating catalyst having excellent levels of both desulfurization activity and denitrification activity to be produced with comparative ease. The process includes a first step of mixing an acidic aluminum salt aqueous solution and a basic aluminum salt aqueous solution in the presence of phosphate ions and silicate ions to achieve a pH of 6.5 to 9.

Abstract: An image taking apparatus according to an aspect of the invention comprises: an image pickup device which picks up an object image and outputs the picked-up image data; a face detection device which detects human faces in the image data; a face-distance calculating device which calculates the distance between the faces among a plurality of faces detected by the face detection device; and a controlling device which controls the image pickup device to start shooting, after a shooting instruction is issued, in the case where the distance between the faces calculated by the face-distance calculating device is not greater than a first predetermined threshold value. The image taking apparatus allows shooting the moment the distance between the faces is close enough not be greater than to a predetermined threshold value.

Abstract: An image taking apparatus according to an aspect of the invention comprises: an image pickup device which picks up an object image and outputs the picked-up image data; a face detection device which detects human faces in the image data; a face-distance calculating device which calculates the distance between the faces among a plurality of faces detected by the face detection device; and a controlling device which controls the image pickup device to start shooting, after a shooting instruction is issued, in the case where the distance between the faces calculated by the face-distance calculating device is not greater than a first predetermined threshold value. The image taking apparatus allows shooting the moment the distance between the faces is close enough not be greater than to a predetermined threshold value.

Abstract: Provided is an evaporation apparatus which reduces deformation of a mask, improves adhesion between a substrate and an evaporation mask, and improves accuracy of dividing a region on which a film is to be formed and a region on which the film is not to be formed. The evaporation apparatus includes a pressing mechanism for pressing a film forming substrate disposed on an evaporation mask including a magnetic material against the evaporation mask. The pressing mechanism includes a magnet for attracting the mask toward at least a corner portion of the film forming substrate.

Abstract: A semiconductor device includes a chip stacked body where a plurality of semiconductor chips are stacked, and penetration electrodes respectively formed in the semiconductor chips are electrically interconnected in stacking order of the semiconductor chips, a first support member that is disposed to face a first semiconductor chip formed in one end of the chip stacked body, and including electrodes electrically connected to the penetration electrodes of the first semiconductor chip, and a wiring board that is disposed to face a second semiconductor chip formed in an end opposed to the one end of the chip stacked body, and including external electrodes on a surface opposed to a surface facing the second semiconductor chip that is to be electrically connected to the penetration electrodes of the second semiconductor chip.

Abstract: A semiconductor device includes a first wiring hoard, a second semiconductor chip, and a second seal. The first wiring board includes a first substrate, a first semiconductor chip, and a first seal. The first semiconductor chip is disposed on the first substrate. The first seal is disposed on the first substrate. The first seal surrounds the first semiconductor chip. The first seal has the same thickness as the first semiconductor chip. The second semiconductor chip is stacked over the first semiconductor chip. The first semiconductor chip is between the second semiconductor chip and the first substrate. The second semiconductor chip is greater in size in plan view than the first semiconductor chip. The second seal seals at least a first gap between the first semiconductor chip and the second semiconductor chip.

Abstract: In an organic electroluminescence display device which includes: a display region DR in which a plurality of pixels are arranged; and a power source part CC which is arranged outside the display region, each of the plurality of pixels includes: a lower electrode An; a light emitting layer stacked above the lower electrode; and an upper electrode which includes a thin silver film AG and is formed by a layer shared in common by other pixels above the light emitting layer, the upper electrode extends to the power source part for electrically connection, the thin silver film has a portion arranged between the display region and the power source part, and a background layer containing an electron pair donor is arranged as a background of at least a portion of the thin silver film between the display region and the power source part.

Abstract: A method of forming a semiconductor device may include, but is not limited to, the following processes. A supporting substrate is prepared. The supporting substrate has a chip mounting area, and a plurality of penetrating slits around the chip mounting area. At least a stack of semiconductor chips is formed over the chip mounting area. A first sealing member is formed, which seals the stack of semiconductor chips without the first sealing member filling the plurality of penetrating slits.

Abstract: A semiconductor device includes a chip stacked structure. The chip stacked structure may include, but is not limited to, first and second semiconductor chips. The first semiconductor chip has a first thickness. The second semiconductor chip has a second thickness that is thinner than the first thickness.