Patents by Inventor Masao Shingu
Masao Shingu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11915928Abstract: A semiconductor memory device includes a first conductive layer, a semiconductor layer extending in a first direction and being opposed to the first conductive layer, and a gate insulating film disposed between the first conductive layer and the semiconductor layer. The first conductive layer includes a first region, a second region disposed between the first region and the gate insulating film, and a third region disposed between the first region and the first interlayer insulating layer. The first to the third regions contain a metal. The third region contains silicon (Si). The first region does not contain silicon (Si) or has a lower silicon (Si) content than a silicon (Si) content in the third region. The second region does not contain silicon (Si) or has a lower silicon (Si) content than the silicon (Si) content in the third region.Type: GrantFiled: September 10, 2021Date of Patent: February 27, 2024Assignee: Kioxia CorporationInventors: Masahiro Koike, Masao Shingu, Masaya Ichikawa
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Publication number: 20220301869Abstract: A semiconductor memory device includes a first conductive layer, a semiconductor layer extending in a first direction and being opposed to the first conductive layer, and a gate insulating film disposed between the first conductive layer and the semiconductor layer. The first conductive layer includes a first region, a second region disposed between the first region and the gate insulating film, and a third region disposed between the first region and the first interlayer insulating layer. The first to the third regions contain a metal. The third region contains silicon (Si). The first region does not contain silicon (Si) or has a lower silicon (Si) content than a silicon (Si) content in the third region. The second region does not contain silicon (Si) or has a lower silicon (Si) content than the silicon (Si) content in the third region.Type: ApplicationFiled: September 10, 2021Publication date: September 22, 2022Applicant: Kioxia CorporationInventors: Masahiro KOIKE, Masao SHINGU, Masaya ICHIKAWA
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Publication number: 20210210507Abstract: According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an extending direction of the semiconductor pillar, and a memory film which covers a periphery of the semiconductor film. The memory film includes a first portion formed between the stacked body and the semiconductor film and a second portion formed between the second layer and the semiconductor film. An outer periphery of the second portion in a plane perpendicular to the extending direction is wider than an outer periphery of the first portion on a second layer side of the stacked body.Type: ApplicationFiled: March 18, 2021Publication date: July 8, 2021Inventors: Masaaki HIGUCHI, Masaru Kito, Masao Shingu
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Patent number: 10985173Abstract: According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an extending direction of the semiconductor pillar, and a memory film which covers a periphery of the semiconductor film. The memory film includes a first portion formed between the stacked body and the semiconductor film and a second portion formed between the second layer and the semiconductor film. An outer periphery of the second portion in a plane perpendicular to the extending direction is wider than an outer periphery of the first portion on a second layer side of the stacked body.Type: GrantFiled: February 15, 2018Date of Patent: April 20, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Masaaki Higuchi, Masaru Kito, Masao Shingu
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Patent number: 10269821Abstract: A semiconductor memory device includes first and second electrode films, an interlayer insulating film, a semiconductor pillar, and a first insulating film. The first electrode film extends in a first direction. The second electrode film is provided separately from the first electrode film in a second direction and extends in the first direction. The interlayer insulating film is provided between the first and the second electrode films. The first insulating film includes first and second insulating regions. A concentration of nitrogen in the first position of the second insulating region is higher than a concentration of nitrogen in the second position between the first position and the semiconductor pillar. A concentration of nitrogen in the first insulating region is lower than the concentration of the nitrogen in the first position.Type: GrantFiled: February 17, 2016Date of Patent: April 23, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Masao Shingu, Katsuyuki Sekine, Hirokazu Ishigaki, Makoto Fujiwara
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Patent number: 10181477Abstract: According to the embodiment, a semiconductor device includes: a substrate; a stacked body provided on the substrate and including a plurality of electrode layers stacked with an insulator interposed; a semiconductor pillar provided on the substrate and in the stacked body; a semiconductor body provided in the stacked body; and an insulating film including a charge storage film provided between the plurality of electrode layers and the semiconductor body, and extending in the stacking direction. The semiconductor body includes a first portion and a second portion. The first portion is surrounded with the plurality of electrode layers and extends in a stacking direction of the stacked body. The second portion is in contact with an upper surface of the semiconductor pillar.Type: GrantFiled: September 12, 2016Date of Patent: January 15, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Hirokazu Ishigaki, Tatsuya Okamoto, Masao Shingu
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Patent number: 10121797Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body including control gate electrodes stacked upwardly of a substrate; a semiconductor layer facing the control gate electrodes; and a gate insulating layer provided between the control gate electrode and the semiconductor layer. The stacked body comprises: a first metal layer configuring the control gate electrode; a first barrier metal layer contacting an upper surface of this first metal layer; a first silicon nitride layer contacting an upper surface of this first barrier metal layer; a first inter-layer insulating layer contacting an upper surface of this first silicon nitride layer; a second barrier metal layer contacting a lower surface of the first metal layer; a second silicon nitride layer contacting a lower surface of this second barrier metal layer; and a second inter-layer insulating layer contacting a lower surface of this second silicon nitride layer.Type: GrantFiled: September 19, 2016Date of Patent: November 6, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shigeki Kobayashi, Satoshi Konagai, Atsushi Konno, Kenta Yamada, Masaaki Higuchi, Masao Shingu, Soichiro Kitazaki, Yoshimasa Mikajiri
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Patent number: 10032935Abstract: A semiconductor memory device includes a substrate, a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate, and a pillar extending through the multi-layered structure. The pillar includes a semiconductor body extending along the pillar, and a charge-storing film around the semiconductor body, the charge-storing film having a first thickness at first portions facing the insulating layers and a second thickness greater than the first thickness at second portions facing the conductive layers.Type: GrantFiled: September 29, 2016Date of Patent: July 24, 2018Assignee: Toshiba Memory CorporationInventors: Masaaki Higuchi, Masao Shingu, Tatsuya Kato, Takeshi Murata, Makoto Fujiwara, Masaki Kondo, Muneyuki Tsuda, Takashi Kurusu
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Publication number: 20180175057Abstract: According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an extending direction of the semiconductor pillar, and a memory film which covers a periphery of the semiconductor film. The memory film includes a first portion formed between the stacked body and the semiconductor film and a second portion formed between the second layer and the semiconductor film. An outer periphery of the second portion in a plane perpendicular to the extending direction is wider than an outer periphery of the first portion on a second layer side of the stacked body.Type: ApplicationFiled: February 15, 2018Publication date: June 21, 2018Inventors: Masaaki HIGUCHI, Masaru KITO, Masao SHINGU
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Patent number: 9929176Abstract: According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an extending direction of the semiconductor pillar, and a memory film which covers a periphery of the semiconductor film. The memory film includes a first portion formed between the stacked body and the semiconductor film and a second portion formed between the second layer and the semiconductor film. An outer periphery of the second portion in a plane perpendicular to the extending direction is wider than an outer periphery of the first portion on a second layer side of the stacked body.Type: GrantFiled: January 4, 2017Date of Patent: March 27, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Masaaki Higuchi, Masaru Kito, Masao Shingu
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Patent number: 9831180Abstract: According to the embodiment, the semiconductor device includes: a substrate; a stacked body; and a plurality of columnar portions. The stacked body is provided on the substrate. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The stacked body includes a stacked portion and a staircase portion. The plurality of electrode layers includes a first portion and a second portion. The columnar portions are provided in the stacked portion of the stacked body. The columnar portions extend in a stacking direction of the stacked body. The columnar portions include a semiconductor body extending in the stacking direction and a charge storage film. The second portion includes a third portion. A thickness of the third portion along the stacking direction is thinner than a thickness of the first portion along the stacking direction.Type: GrantFiled: September 16, 2016Date of Patent: November 28, 2017Assignee: TOSHIBA MEMORY CORPORATIONInventors: Masao Shingu, Kenta Yamada, Masaaki Higuchi, Daigo Ichinose
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Patent number: 9786678Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers stacked in a first direction via an inter-layer insulating layer. In addition, the nonvolatile semiconductor memory device comprises: a semiconductor layer having the first direction as a longer direction; a tunnel insulating layer contacting a side surface of the semiconductor layer; a charge accumulation layer contacting a side surface of the tunnel insulating layer; and a block insulating layer contacting a portion facing the conductive layer, of a side surface of the charge accumulation layer. Moreover, the portion facing the conductive layer, of the charge accumulation layer is thinner compared to a portion facing the inter-layer insulating layer, of the charge accumulation layer.Type: GrantFiled: July 14, 2015Date of Patent: October 10, 2017Assignee: TOSHIBA MEMORY CORPORATIONInventors: Katsuyuki Sekine, Masaaki Higuchi, Masao Shingu, Hirokazu Ishigaki, Naoki Yasuda
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Publication number: 20170271527Abstract: A semiconductor memory device includes a substrate, a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate, and a pillar extending through the multi-layered structure. The pillar includes a semiconductor body extending along the pillar, and a charge-storing film around the semiconductor body, the charge-storing film having a first thickness at first portions facing the insulating layers and a second thickness greater than the first thickness at second portions facing the conductive layers.Type: ApplicationFiled: September 29, 2016Publication date: September 21, 2017Inventors: Masaaki HIGUCHI, Masao SHINGU, Tatsuya KATO, Takeshi MURATA, Makoto FUJIWARA, Masaki KONDO, Muneyuki TSUDA, Takashi KURUSU
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Publication number: 20170263633Abstract: According to the embodiment, a semiconductor device includes: a substrate; a stacked body provided on the substrate and including a plurality of electrode layers stacked with an insulator interposed; a semiconductor pillar provided on the substrate and in the stacked body; a semiconductor body provided in the stacked body; and an insulating film including a charge storage film provided between the plurality of electrode layers and the semiconductor body, and extending in the stacking direction. The semiconductor body includes a first portion and a second portion. The first portion is surrounded with the plurality of electrode layers and extends in a stacking direction of the stacked body. The second portion is in contact with an upper surface of the semiconductor pillar.Type: ApplicationFiled: September 12, 2016Publication date: September 14, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Hirokazu ISHIGAKI, Tatsuya Okamoto, Masao Shingu
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Publication number: 20170263558Abstract: According to the embodiment, the semiconductor device includes: a substrate; a stacked body; and a plurality of columnar portions. The stacked body is provided on the substrate. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The stacked body includes a stacked portion and a staircase portion. The plurality of electrode layers includes a first portion and a second portion. The columnar portions are provided in the stacked portion of the stacked body. The columnar portions extend in a stacking direction of the stacked body. The columnar portions include a semiconductor body extending in the stacking direction and a charge storage film. The second portion includes a third portion. A thickness of the third portion along the stacking direction is thinner than a thickness of the first portion along the stacking direction.Type: ApplicationFiled: September 16, 2016Publication date: September 14, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Masao Shingu, Kenta Yamada, Masaaki Higuchi, Daigo Ichinose
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Publication number: 20170243873Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body including control gate electrodes stacked upwardly of a substrate; a semiconductor layer facing the control gate electrodes; and a gate insulating layer provided between the control gate electrode and the semiconductor layer. The stacked body comprises: a first metal layer configuring the control gate electrode; a first barrier metal layer contacting an upper surface of this first metal layer; a first silicon nitride layer contacting an upper surface of this first barrier metal layer; a first inter-layer insulating layer contacting an upper surface of this first silicon nitride layer; a second barrier metal layer contacting a lower surface of the first metal layer; a second silicon nitride layer contacting a lower surface of this second barrier metal layer; and a second inter-layer insulating layer contacting a lower surface of this second silicon nitride layer.Type: ApplicationFiled: September 19, 2016Publication date: August 24, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki KOBAYASHI, Satoshi KONAGAI, Atsushi KONNO, Kenta YAMADA, Masaaki HIGUCHI, Masao SHINGU, Soichiro KITAZAKI, Yoshimasa MIKAJIRI
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Publication number: 20170117293Abstract: According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an extending direction of the semiconductor pillar, and a memory film which covers a periphery of the semiconductor film. The memory film includes a first portion formed between the stacked body and the semiconductor film and a second portion formed between the second layer and the semiconductor film. An outer periphery of the second portion in a plane perpendicular to the extending direction is wider than an outer periphery of the first portion on a second layer side of the stacked body.Type: ApplicationFiled: January 4, 2017Publication date: April 27, 2017Inventors: Masaaki HIGUCHI, Masaru KITO, Masao SHINGU
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Patent number: 9620653Abstract: According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.Type: GrantFiled: December 16, 2015Date of Patent: April 11, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Masao Shingu, Jun Fujiki, Naoki Yasuda, Koichi Muraoka
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Publication number: 20170062451Abstract: A semiconductor memory device includes first and second electrode films, an interlayer insulating film, a semiconductor pillar, and a first insulating film. The first electrode film extends in a first direction. The second electrode film is provided separately from the first electrode film in a second direction and extends in the first direction. The interlayer insulating film is provided between the first and the second electrode films. The first insulating film includes first and second insulating regions. A concentration of nitrogen in the first position of the second insulating region is higher than a concentration of nitrogen in the second position between the first position and the semiconductor pillar. A concentration of nitrogen in the first insulating region is lower than the concentration of the nitrogen in the first position.Type: ApplicationFiled: February 17, 2016Publication date: March 2, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Masao SHINGU, Katsuyuki SEKINE, Hirokazu ISHIGAKI, Makoto FUJIWARA
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Patent number: 9583504Abstract: According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an extending direction of the semiconductor pillar, and a memory film which covers a periphery of the semiconductor film. The memory film includes a first portion formed between the stacked body and the semiconductor film and a second portion formed between the second layer and the semiconductor film. An outer periphery of the second portion in a plane perpendicular to the extending direction is wider than an outer periphery of the first portion on a second layer side of the stacked body.Type: GrantFiled: March 2, 2014Date of Patent: February 28, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Masaaki Higuchi, Masaru Kito, Masao Shingu