Abstract: A solid-state imaging device includes a plurality of pixel cells arranged in rows and columns, a plurality of vertical signal lines each of which is provided for a corresponding one of the columns, and a plurality of column circuits each of which is provided for a corresponding one or more of the columns and into each of which are input the signal voltages output to one or more of the vertical signal lines disposed in the corresponding one or more of the columns. Each of the plurality of column circuits includes an amplifier that includes a constant current source transistor, the solid-state imaging device further includes a reference current source circuit that supplies a first bias voltage to gates of a plurality of the constant current source transistors included in the column circuits, and each of the column circuits further includes a sample-and-hold circuit that holds the first bias voltage.

Abstract: A solid-state imaging apparatus includes a plurality of pixel cells arranged in a pixel array unit, a vertical signal line and a pixel power supply line each connected to a source electrode and a drain electrode of an amplifying transistor, a Pch transistor for supplying potential AVDD to the vertical signal line, a Pch transistor for supplying potential PBIAS_H higher than the potential AVDD to the vertical signal line, a Pch transistor for supplying the potential PBIAS_H to the pixel power supply line, wherein while the transfer transistor is turned ON and transfers signal charges photoelectrically converted by a photodiode to the floating diffusion portion, the Pch transistors are turned ON and the potential PBIAS_H is applied to the vertical signal line and the pixel power supply line.

Abstract: A solid-state imaging device includes: an imaging region; a peripheral circuit region; photodiodes arranged in rows and columns in the imaging region; output circuits in the imaging region for outputting, to the outside of the imaging region, pixel signals corresponding to electric charges photoelectrically converted in the photodiodes; a read circuit in the peripheral circuit region for reading the pixel signals from the imaging region; and signal lines extending in a column direction to connect output circuits to the read circuit. One pixel cell includes two photodiodes adjacent in a row direction and an output circuit. An output circuit in a first pixel cell is adjacent, in the row direction, to a second pixel cell adjacent to the first pixel cell in the column direction and shifting from the first pixel cell by one column of the photodiodes in the row direction.

Abstract: A solid-state imaging device includes a plurality of pixel cells arranged in rows and columns, a plurality of vertical signal lines each of which is provided for a corresponding one of the columns, and a plurality of column circuits each of which is provided for a corresponding one or more of the columns and into each of which are input the signal voltages output to one or more of the vertical signal lines disposed in the corresponding one or more of the columns. Each of the plurality of column circuits includes an amplifier that includes a constant current source transistor, the solid-state imaging device further includes a reference current source circuit that supplies a first bias voltage to gates of a plurality of the constant current source transistors included in the column circuits, and each of the column circuits further includes a sample-and-hold circuit that holds the first bias voltage.

Abstract: A solid-state imaging device comprises a pixel array; a reference signal generation unit operable to generate a reference signal that changes monotonically for a predetermined period in a horizontal period; a comparator operable to compare the level of a pixel signal with the level of a reference signal; a counter operable to count input clock pulses; a memory operable to store the number of counts counted by the counter as a digital value; and a timing control unit operable to generate a clock that is to be input into the counter, and change frequency of the clock that is to be input into the counter based on external input data.

Abstract: The solid-state imaging device having pixels that are arranged in rows and columns and convert optical signals to electric signals to output the electric signals as voltage signals includes column signal lines each provided for a corresponding one of the columns and transmitting, in the direction of the columns, voltage signals outputted from the pixels, current sources each provided for and connected to a corresponding one of the column signal lines, column amplification circuits each provided for a corresponding one of the column signal lines and amplifying the voltage signals transmitted through the column signal lines, a current-source ground potential supply line supplying the current sources with ground potential, and a column amplification circuit ground potential supply line supplying the column amplification circuits with ground potential.

Abstract: The solid-state imaging device according to the present invention includes: pixel units arranged two-dimensionally in rows and columns; signal holding units each holding an analog signal outputted from one of the pixel units in a corresponding one of the columns; and column AD circuits each converting, into a digital signal, the analog signal held by a corresponding one of said signal holding units. The signal holding units and the column AD circuits are respectively provided for the columns of the pixel units. Each of the signal holding units includes: a switching element connected to a column signal line through which the analog signal outputted from the one of the pixel units is transmitted; and a capacitor element holding the analog signal and being connected to the column signal line through the switching element.

Abstract: The present invention implements a solid-state imaging device and a camera which develop lower noise. The solid-state imaging device includes unit cells which are arranged in two dimensions. Each of the unit cells includes: a photoelectric converting element which photoelectrically converts incident light; and amplifying transistors each of which outputs a signal voltage according to signal charges of the photoelectric converting element. The photoelectric converting element is electrically connected in common with gates of the amplifying transistors.

Abstract: An imaging device outputs brightness information according to an amount of incident light and includes: an imaging unit that includes a plurality of unit cells arranged one dimensionally or two-dimensionally, each unit cell including a photoelectric conversion part that generates a first output voltage in a reset state and a second output voltage according to an amount of incident light, and each unit cell generating a reset voltage that corresponds to the first output voltage and a read voltage that corresponds to the second output voltage; and an output unit operable to output, in relation to each unit cell, brightness information indicating a difference between the reset voltage and the read voltage when normal light is incident to the imaging device and the read voltage is in a predetermined range, and brightness information indicating high brightness when strong light is incident to the imaging device and the read voltage is not in the predetermined range.

Abstract: A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.

Abstract: A sprinkler head configured to prevent breakage of a disk spring due to application of an excessive load and hold the disk spring stably at a predetermined position is provided. A sprinkler head 1 includes a head body 10 having a water discharging cylinder 16 in the interior thereof, a frame 20 connected to the head body 10, a valve body 30 provided in the interior of the frame 20 and closing a water discharging port 12 of the water discharging cylinder 16, a thermosensitive portion 51 configured to support the valve body 30, and a disk spring 64 provided between the valve body 30 and the thermosensitive portion 51. A set screw 65 to be coupled to the thermosensitive portion 51 is provided under the valve body 30, and the set screw 65 is inserted into a through hole 64a at the center of the disk spring 64. The set screw 65 includes a head portion and a leg portion, and the height of the head portion is formed to be higher than the height of the arranged disk spring 64.

Abstract: A sprinkler head having a strong impact structure (impact resistance structure) is provided. A head body 10 having a water discharging port 12, a valve body 30 to be brought into press contact with a valve seat 17 formed at a lower end of the water discharging port 12, and a valve body supporting mechanism 50 configured to support the valve body 30 are provided. The valve body supporting mechanism 50 includes a cylindrical plunger 52 having a flange portion 52a at a lower portion thereof, a thermosensitive member 55 provided at the flange portion 52a of the plunger 52, and a thermosensitive plate 53 coming into contact with the thermosensitive member 55 and provided so as to be orthogonal to an axial center of the head body 10. The plunger 52 is provided so that a lower end portion thereof projects downward with respect to the thermosensitive plate 53.

Abstract: The portion of a board corresponding to the surrounding portion of a hole 4 formed through the board is arranged to include a patternless section 6 where a conductive film 5 is not provided.

Abstract: A composition includes: (I) an alkenyl functional, phenyl-containing polyorganosiloxane, an Si—H functional phenyl-containing polyorganosiloxane, or a combination thereof; (II) a hydrogendiorganosiloxy terminated oligodiphenylsiloxane having specific molecular weight, an alkenyl-functional, diorganosiloxy-terminated oligodiphenylsiloxane having specific molecular weight, or a combination thereof; and (III) a hydrosilylation catalyst. A light emitting device is made by applying the composition onto a light source followed by curing. The composition provides a cured material with mechanical properties suited for use as an encapsulant for a light emitting device.

Abstract: A solid-state imaging device includes plural pixel cells, arranged in a matrix, each of which includes a photodiode that photoelectrically converts incident light. The solid-state imaging devices also includes a transferring transistor that transfers a charge generated by the photodiode, a floating diffusion that accumulates the transferred charge, a reset transistor that resets a potential of said floating diffusion, and an amplifying transistor that converts the charge accumulated in the floating diffusion into a voltage.

Abstract: A solid-state imaging device comprises a pixel array; a reference signal generation unit operable to generate a reference signal that changes monotonically for a predetermined period in a horizontal period; a comparator operable to compare the level of a pixel signal with the level of a reference signal; a counter operable to count input clock pulses; a memory operable to store the number of counts counted by the counter as a digital value; and a timing control unit operable to generate a clock that is to be input into the counter, and change frequency of the clock that is to be input into the counter based on external input data.

Abstract: A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.

Abstract: Solid-state imaging device having a plurality of vertical signal lines, includes for each vertical signal line, an effective pixel and a dummy pixel, a switch transistor provided on a path connecting the dummy pixel and the vertical signal line, and a read-out unit. The switch transistor is OFF while a first signal is outputted from the effective pixel and ON while a second signal is outputted from the dummy pixel. The read-out unit (i) reads out a level of the first signal while the switch transistor is OFF, and (ii) reads out a difference between the level of the first signal and a level of the second signal when the switch transistor is turned from OFF to ON.

Abstract: A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.

Abstract: It is an object of the present invention to provide a solid-state imaging device capable of prevent image defects from appearing in an outputted image while suppressing increase in a layout area with a simple circuit structure and is an MOS solid-state imaging device. The MOS solid-state imaging device includes pixels which outputs signals corresponding to intensity of incident light, vertical signal lines which are respectively provided to columns of the pixels and each of which transmits the signals from said pixels in a column direction, and column amplifier circuits that amplify the signals from the pixels and are respectively connected to the vertical signal lines, and each of the column amplifier circuits includes a voltage clipping circuit includes a voltage clipping circuit which limits a maximum output voltage of said column amplifier circuit.