Abstract: An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.

Abstract: An imaging device having a pixel including: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; a first transistor that has a gate coupled to the photoelectric converter and that amplifies the electric signal; and a second transistor that has a gate coupled to the photoelectric converter, one of a source and a drain of the second transistor being coupled to the photoelectric converter. The imaging device further includes a voltage supply circuit configured to supply two or more different voltages to the other of the source and the drain of the second transistor.

Abstract: An imaging device including: a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a voltage supplier; an output circuit for outputting a signal corresponding to the potential of the second electrode; and a detector for detecting the signal level. The change rate of the conversion efficiency of the photoelectric converter with respect to a bias voltage applied between the electrodes when the bias voltage is in a first range is greater than that when the bias voltage is in a second range higher than the first range. The voltage supplier, when the detected level is a first threshold or higher, causes the potential difference between the electrodes to be a first difference, and, when the detected level is lower than a second threshold that is the first threshold or lower, causes the potential difference to be a second difference greater than the first difference.

Abstract: A cooling fan automatic control system includes: a temperature sensor configured to measure a temperature of an object to be cooled; a plurality of current sensors configured to measure power consumption by each of a plurality of cooling fans; and a controller which, when a measured temperature that is a measured value obtained by the temperature sensor is higher than a target cooling temperature of the object to be cooled, controls rotational speeds of the plurality of cooling fans so as to minimize a total of measured current values of the plurality of cooling fans obtained by the plurality of current sensors.

Abstract: In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.

Abstract: An imaging device provided with: a pixel including a photoelectric converter that converts light into charges, the pixel outputting a first signal corresponding to an amount of the charges; an output signal line coupled to the pixel, the first signal being transmitted through the output signal line; a load transistor having a source, a drain, and a gate, one of the source and the drain being coupled to the output signal line; and a voltage supply circuit coupled to the gate of the load transistor, the voltage supply circuit selectively supplying either a first voltage or a second voltage to the gate.

Abstract: An imaging device includes a photoelectric converter that generates signal charge; a charge storage node that stores the signal charge; a capacitive element connected to the charge storage node; and a first transistor connected to the charge storage node via the capacitive element, wherein switching between on-state and off-state of the first transistor causes an amount of saturated charge in the charge storage node to change.

Abstract: An imaging device having a pixel including a photoelectric converter that generates electric signal; first transistor having a gate coupled to the photoelectric converter; second transistor one of a source and a drain of which is coupled to one of a source and a drain of the first transistor; third transistor one of a source and a drain of which is coupled to the other of the source and the drain of the second transistor, the other of the source and the drain of the third transistor coupled to the photoelectric converter; first capacitor having a first and second ends, the first end coupled to the other of the source and the drain of the second transistor, first reference voltage applied to the second end; and second capacitor having a third and fourth ends, the third end coupled to the first end, the fourth end coupled to the photoelectric converter.

Abstract: Provided is a fan control apparatus which includes: a first sensor; a second sensor; an RF fan; and a controller. The first sensor is provided in a first room, and is configured to acquire a measured value of at least one condition selected from conditions of atmospheric pressure, temperature, and humidity for the first room, the second sensor is provided in a second room adjacent to the first room, and is configured to acquire a measured value of the same condition as the at least one selected condition for the second room, the RF fan is placed at a boundary between the first and second rooms, and the controller is configured to control a rotational speed and rotational direction of the RF fan in such a manner that the measured values of the first and second sensors are the same.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device comprising: a first pixel cell including a first photoelectric converter generating a first signal, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode, and a first circuit coupled to the first electrode and detecting the first signal; and a second pixel cell including a second photoelectric converter generating a second signal, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and a second circuit coupled to the second electrode and detecting the second signal. A sensitivity of the first pixel cell is higher than that of the second pixel cell. A circuit configuration of the first circuit is different from that of the second circuit. The first circuit includes a feedback circuit configured to negatively feed back a voltage of the first electrode to the first electrode.

Abstract: An electronic device including: a photosensitive layer that converts incident light into a signal charge; a first electrode that collects the signal charge; and a first carrier blocking layer between the photosensitive layer and the first electrode. The carrier blocking layer is configured to block a carrier a polarity of which is different from that of the signal charge. Under a first range of biases on the electronic device, the photosensitive layer is configured to generate photocurrent while illuminated. Under a second range of biases on the electronic device, the photosensitive layer is configured to generate lower photocurrent while illuminated compared to under the first range of biases.

Abstract: An imaging device including: a photoelectric converter including first and second electrodes and a conversion layer therebetween; a voltage supplier; an outputter outputting a signal indicating the potential of the second electrode; and a detector detecting the signal level, in which the change rate of the conversion efficiency of the photoelectric converter with respect to a bias voltage, applied between the electrodes, when the bias voltage is in a first range is greater than when the bias voltage is in a second range greater than the first range, and the voltage supplier, when the detected level is less than a first threshold, causes the potential difference between the electrodes to become a first difference, and, when the detected level is greater than or equal to a second threshold greater than or equal to the first threshold, causes the potential difference to become a second difference greater than the first difference.

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.

Abstract: An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.

Abstract: An imaging device including: a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a voltage supplier; an output circuit for outputting a signal corresponding to the potential of the second electrode; and a detector for detecting the signal level. The change rate of the conversion efficiency of the photoelectric converter with respect to a bias voltage applied between the electrodes when the bias voltage is in a first range is greater than that when the bias voltage is in a second range higher than the first range. The voltage supplier, when the detected level is a first threshold or higher, causes the potential difference between the electrodes to be a first difference, and, when the detected level is lower than a second threshold that is the first threshold or lower, causes the potential difference to be a second difference greater than the first difference.

Abstract: An imaging device includes: a first pixel cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal detection circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second pixel cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal detection circuit that is electrically connected to the second photoelectric converter and detects the second signal. A sensitivity of the first pixel cell is higher than a sensitivity of the second pixel cell. A circuit configuration of the first signal detection circuit is different from a circuit configuration of the second signal detection circuit.

Abstract: An imaging device including: unit pixel cells each including a first electrode, a second electrode, a photoelectric conversion layer, a charge accumulation region connected to the first electrode, and a signal detection circuit connected to the charge accumulation region; and a voltage supply circuit connected to the second electrode, the voltage supply circuit supplying a first voltage to the second electrode in a first period, the voltage supply circuit supplying a second voltage that is different from the first voltage to the second electrode in a second period. Each unit pixel cells includes a reset transistor which switches between supply and cutoff of a reset voltage initializing the charge accumulation region, and a potential difference between the first electrode and the second electrode when the reset voltage is supplied is greater than a potential difference between the first electrode and the second electrode after the reset voltage is cut off.

Abstract: An imaging device includes a photoelectric converter that generates signal charge; a charge storage node that stores the signal charge; a capacitive element connected to the charge storage node; and a first transistor connected to the charge storage node via the capacitive element, wherein switching between on-state and off-state of the first transistor causes an amount of saturated charge in the charge storage node to change.