Abstract: An imaging device includes a semiconductor substrate that includes a first impurity region having n-type conductivity; a photoelectric converter that is electrically connected to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal being electrically connected to the first impurity region; and a voltage supply circuit electrically connected to the second terminal. The voltage supply circuit is configured to generate a first voltage and a second voltage different from the first voltage. The first impurity region accumulates positive charges generated by the photoelectric converter.

Abstract: An imaging device according to the present disclosure includes a photoelectric converter that converts light into an electric charge; a transfer transistor; a charge accumulation node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the charge accumulation node; a first reset transistor one of a source and a drain of which is coupled to the charge accumulation node; and a second reset transistor one of a source and a drain of which is coupled to the photoelectric converter, wherein one of a source and a drain of the first signal detection transistor is coupled to the other of the source and the drain of the first reset transistor and the other of the source and drain of the second reset transistor.

Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.

Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.

Abstract: An imaging device includes: a photoelectric converter generating a signal; a signal detection circuit detecting the signal and including a first transistor having a first control terminal connected to the photoelectric converter, a first input terminal, and a first output terminal, a second transistor having a second control terminal connected to the photoelectric converter, a second input terminal, and a second output terminal, a third transistor having a third control terminal, a third input terminal, and a third output terminal, one of the third input and output terminal connected to one of the second input and output terminal; an output signal line connected to one of the first input and output terminal, and to the other of the third input and output terminal; and a voltage supply circuit connected to the third control terminal, selectively supplying a first voltage or a second voltage to the third control terminal.

Abstract: An imaging device including: pixel cells arranged in a matrix having rows and columns, the pixel cells including first pixel cells and different second pixel cells, each of the pixel cells having: a photoelectric converter that converts incident light into signal charge, a first transistor having a first gate, a first source and a first drain, the first gate coupled to the photoelectric converter, and a second transistor having a second gate, a second source and a second drain, either the first source or the first drain electrically coupled to the photoelectric converter via the second transistor. The imaging device further including a first line coupled to one of the first source and the first drain of each of the first pixel cells; and a second line coupled to one of the first source and the first drain of each of the second pixel cells.

Abstract: An imaging device provided with: a pixel including a photoelectric converter that converts light into charges, the pixel outputting a first signal corresponding to an amount of the charges; an output signal line coupled to the pixel, the first signal being transmitted through the output signal line; a load transistor having a source, a drain, and a gate, one of the source and the drain being coupled to the output signal line; and a voltage supply circuit coupled to the gate of the load transistor, the voltage supply circuit selectively supplying either a first voltage or a second voltage to the gate.

Abstract: A method for driving an imaging device which includes unit pixel cells each including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and second electrode, the photoelectric conversion layer having a photocurrent characteristic including a first voltage range, a second voltage range, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first voltage range and the second voltage range, the method including supplying a first voltage to the second electrode in a first period, and supplying a second voltage different from the first voltage to the second electrode in a second period different from the first period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.

Abstract: An imaging device includes: pixel cells arranged in a matrix having rows and columns and including first and second pixel cells in one of the columns, each pixel cell comprising a photoelectric converter and a signal detection circuit detecting an electrical signal in the photoelectric converter and outputting an output signal; first and second output signal lines through which the output signals are output from each of the first and second pixel cells, respectively; and first and second feedback circuits that form, for each of the first and second pixel cells, first and second feedback paths negatively feeding back the electrical signals, respectively. The first and second pixel cells are arranged every n rows in the one of the columns where that n is an integer equal to or greater than two, the rows respectively having the first pixel cells being different from those respectively having the second pixel cells.

Abstract: An imaging device having a pixel including a photoelectric converter that generates electric signal; first transistor having a gate coupled to the photoelectric converter; second transistor one of a source and a drain of which is coupled to one of a source and a drain of the first transistor; third transistor one of a source and a drain of which is coupled to the other of the source and the drain of the second transistor, the other of the source and the drain of the third transistor coupled to the photoelectric converter; first capacitor having a first and second ends, the first end coupled to the other of the source and the drain of the second transistor, first reference voltage applied to the second end; and second capacitor having a third and fourth ends, the third end coupled to the first end, the fourth end coupled to the photoelectric converter.

Abstract: An imaging device which includes a counter electrode, a first pixel electrode facing the counter electrode, a second pixel electrode facing the counter electrode, a photoelectric conversion layer sandwiched between the first pixel electrode and the second pixel electrode, and the counter electrode, a first signal detection circuit electrically connected to the second pixel electrode, and a first switching element connected between the first pixel electrode and the first signal detection circuit.

Abstract: A cooling fan automatic control system includes: a temperature sensor configured to measure a temperature of an object to be cooled; a plurality of current sensors configured to measure power consumption by each of a plurality of cooling fans; and a controller which, when a measured temperature that is a measured value obtained by the temperature sensor is higher than a target cooling temperature of the object to be cooled, controls rotational speeds of the plurality of cooling fans so as to minimize a total of measured current values of the plurality of cooling fans obtained by the plurality of current sensors.

Abstract: An imaging device comprising a unit pixel cell comprising: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; and a signal detection circuit that detects the electric signal, the signal detection circuit comprising a first transistor that amplifies the electric signal, a second transistor that selectively transmits output of the first transistor to outside of the unit pixel cell, and a feedback circuit that forms a feedback loop through which the electric signal is negatively fed back, the feedback loop not passing through the first transistor.

Abstract: An imaging device including at least one pixel, where each of the at least one pixels includes a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface; a first electrode located on the first surface; a second electrode located on the first surface, the second electrode being separated from the first electrode, a first voltage being applied to the second electrode; a third electrode located on the second surface, the third electrode opposing to the first electrode and the second electrode, a second voltage being applied to the third electrode; and an amplifier transistor having a gate electrically connected to the first electrode, where an absolute value of a difference between the first voltage and the second voltage is larger than an absolute value of a difference between the second voltage and a voltage of the first electrode.

Abstract: In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.

Abstract: An imaging device including at least one pixel, where each of the at least one pixels includes a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface; a first electrode located on the first surface; a second electrode located on the first surface, the second electrode being separated from the first electrode, a first voltage being applied to the second electrode; a third electrode located on the second surface, the third electrode opposing to the first electrode and the second electrode, a second voltage being applied to the third electrode; and an amplifier transistor having a gate electrically connected to the first electrode, where an absolute value of a difference between the first voltage and the second voltage is larger than an absolute value of a difference between the second voltage and a voltage of the first electrode.

Abstract: An imaging device includes: a pixel including a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion fila converting light into a charge, an amplification transistor a first gate of which is connected to the pixel electrode, a reset transistor one of second source and drain of which is connected to the pixel electrode, and a feedback transistor one of third source and drain of which is connected to the other of the second source and drain; and a first voltage supply circuit supplying a first voltage to the counter electrode. The reset transistor has such a characteristic that when a voltage equal to or higher than a clipping voltage is supplied between the second gate and the one of the second source and drain, the reset transistor is turned off. The clipping voltage is lower than the first voltage.

Abstract: A sprinkler head employing balls for a heat-sensitive disassembling unit is provided, in which the time period from when a fusible alloy starts to melt until when the sprinkler head is activated is shortened. A sprinkler head includes a frame having a stepped portion projecting inward. The stepped portion has an upper inclined surface provided at the inner-peripheral upper edge thereof and with which balls come into contact, and a guide part provided at the inner-peripheral lower edge thereof and that allows any of the balls that is displaced from the upper inclined surface to move downward from the stepped portion. When a fusible alloy melts, the ball displaced from the upper inclined surface moves along the guide part and is quickly released to the outside of the frame. Hence, the time period from when the fusible alloy starts to melt until when the sprinkler head is activated is shortened.

Abstract: A method for driving an imaging device which includes unit pixel cells each including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and second electrode, the photoelectric conversion layer having a photocurrent characteristic including a first voltage range, a second voltage range, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first voltage range and the second voltage range, the method including supplying a first voltage to the second electrode in a first period, and supplying a second voltage different from the first voltage to the second electrode in a second period different from the first period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.

Abstract: An imaging device including: unit pixel cells each including a first electrode, a second electrode, a photoelectric conversion layer, a charge accumulation region connected to the first electrode, and a signal detection circuit connected to the charge accumulation region; and a voltage supply circuit connected to the second electrode, the voltage supply circuit supplying a first voltage to the second electrode in a first period, the voltage supply circuit supplying a second voltage that is different from the first voltage to the second electrode in a second period. Each unit pixel cells includes a reset transistor which switches between supply and cutoff of a reset voltage initializing the charge accumulation region, and a potential difference between the first electrode and the second electrode when the reset voltage is supplied is greater than a potential difference between the first electrode and the second electrode after the reset voltage is cut off.