Abstract: In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.

Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the counter voltage and a voltage of the pixel electrode.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.

Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.

Abstract: An imaging device includes: unit pixel cells each including first and second electrodes, a photoelectric conversion layer therebetween, a charge accumulation region, and a signal detection circuit; and a voltage supply circuit, the voltage supply circuit supplying a first voltage to the second electrode in an exposure period. The start and end of the exposure period is common to the unit pixel cells. The photoelectric conversion layer has a photocurrent characteristic including first to third voltage ranges. In the third voltage range between the first and second voltage ranges, an absolute value of a rate of change of a current density relative to a bias voltage is less than in the first and second voltage ranges. The voltage supply circuit supplies a second voltage to the second electrode in a non-exposure period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.

Abstract: An imaging device includes first and second pixel cells. The first and second pixel cells each include: a photoelectric converter that generates charge; a first charge transfer channel that has a first end electrically connected to the photoelectric converter, and a second end, the charge transfer channel transferring the charge in a direction from the first end toward the second end; a second charge transfer channel that branches from a position of the charge transfer channel, the second charge transfer channel transferring at least a part of the charge; and a charge accumulator that accumulates charge transferred via the second charge transfer channel. Distances from the first end to the position in the direction of the first and second pixel cells are different from each other.

Abstract: An imaging device which includes a counter electrode, a first pixel electrode facing the counter electrode, a second pixel electrode facing the counter electrode, a photoelectric conversion layer sandwiched between the first pixel electrode and the second pixel electrode, and the counter electrode, a first signal detection circuit electrically connected to the second pixel electrode, and a first switching element connected between the first pixel electrode and the first signal detection circuit.

Abstract: An imaging device includes: a unit pixel cell comprising: a photoelectric converter generating an electric signal and comprising a first and second electrodes and a photoelectric conversion film located therebetween, the first electrode being located on a light receiving side of the photoelectric conversion film, a signal detection circuit detecting the electric signal and comprising a first transistor and a second transistor that are connected to the second electrode, the first transistor amplifying the electric signal, and a capacitor circuit comprising a first capacitor and a second capacitor having a capacitance value larger than that of the first capacitor that are serially connected to each other, the capacitor circuit being provided between the second electrode and a reference voltage; and a feedback circuit comprising the first transistor and an inverting amplifier and negatively feeding back the electric signal to the second transistor via the first transistor and the inverting amplifier.

Abstract: An imaging device includes a pixel cell including: a first photoelectric converter that generates a first electrical signal; and a first signal detection circuit that detects the first electrical signal. The first signal detection circuit includes: a first transistor one of a source and a drain of which is electrically connected to the first photoelectric converter; a first capacitor having first and second ends, the first end being electrically connected to the other of the source and the drain of the first transistor, a reference voltage being applied to the second end; and a second transistor having a gate electrically connected to the first photoelectric converter. The pixel cell outputs, in one frame period, a first image signal and a second image signal in sequence, the first image signal being output when the first transistor is off, the second image signal being output when the first transistor is on.

Abstract: An imaging device according to the present disclosure includes: a counter electrode; a first pixel electrode facing the counter electrode; a second pixel electrode facing the counter electrode; a third pixel electrode facing the counter electrode; a photoelectric conversion layer sandwiched between the first pixel electrode, the second pixel electrode, and the third pixel electrode, and the counter electrode; a first signal detection circuit electrically connected to the first pixel electrode; a second signal detection circuit electrically connected to the second pixel electrode; a first switching element connected between the third pixel electrode and the first signal detection circuit; and a second switching element connected between the third pixel electrode and the second signal detection circuit.

Abstract: An image forming apparatus includes an operation unit that receives an instruction for an operation and executes the operation, and an instruction unit that outputs the instruction to the operation unit. The operation unit includes a configuration storage unit that stores deployment configuration of one or more image forming apparatuses, and an instruction acceptance unit that accepts an instruction for an operation corresponding to the deployment configuration.

Abstract: An imaging device includes: unit pixel cells each including first and second electrodes, a photoelectric conversion layer therebetween, a charge accumulation region, and a signal detection circuit; and a voltage supply circuit, the voltage supply circuit supplying a first voltage to the second electrode in an exposure period. The start and end of the exposure period is common to the unit pixel cells. The photoelectric conversion layer has a photocurrent characteristic including first to third voltage ranges. In the third voltage range between the first and second voltage ranges, an absolute value of a rate of change of a current density relative to a bias voltage is less than in the first and second voltage ranges. The voltage supply circuit supplies a second voltage to the second electrode in a non-exposure period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.

Abstract: An image forming apparatus includes an operation unit that receives an instruction for an operation and executes the operation, and an instruction unit that outputs the instruction to the operation unit. The operation unit includes a configuration storage unit that stores deployment configuration of one or more image forming apparatuses, and an instruction acceptance unit that accepts an instruction for an operation corresponding to the deployment configuration.

Abstract: An imaging device includes first and second pixel cells. The first and second pixel cells each include: a photoelectric converter that generates charge; a first charge transfer channel that has a first end electrically connected to the photoelectric converter, and a second end, the charge transfer channel transferring the charge in a direction from the first end toward the second end; a second charge transfer channel that branches from a position of the charge transfer channel, the second charge transfer channel transferring at least a part of the charge; and a charge accumulator that accumulates charge transferred via the second charge transfer channel. Distances from the first end to the position in the direction of the first and second pixel cells are different from each other.

Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.

Abstract: Provided is a printing device including a print data receiving unit, a page calculation unit that calculates a number of pages before stopping with using a page length of received print data and a distance from a printing mechanism unit to a visual recognition unit, a print instruction unit that changes the number of pages before stopping or a number of printed pages and performs print processing when the received print data corresponds to a control page for controlling printing, and a print stop unit that stops printing when the number of printed pages coincides with the number of pages before stopping.

Abstract: In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.

Abstract: An imaging device includes a pixel cell including: a first photoelectric converter that generates a first electrical signal; and a first signal detection circuit that detects the first electrical signal. The first signal detection circuit includes: a first transistor one of a source and a drain of which is electrically connected to the first photoelectric converter; a first capacitor having first and second ends, the first end being electrically connected to the other of the source and the drain of the first transistor, a reference voltage being applied to the second end; and a second transistor having a gate electrically connected to the first photoelectric converter. The pixel cell outputs, in one frame period, a first image signal and a second image signal in sequence, the first image signal being output when the first transistor is off, the second image signal being output when the first transistor is on.

Abstract: An imaging device includes: a first pixel cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal detection circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second pixel cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal detection circuit that is electrically connected to the second photoelectric converter and detects the second signal. A sensitivity of the first pixel cell is higher than a sensitivity of the second pixel cell. A circuit configuration of the first signal detection circuit is different from a circuit configuration of the second signal detection circuit.