Abstract: Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.

Abstract: A method of processing a liquid discharge head substrate includes the step of providing the substrate, and the step of providing a recessed portion at a back surface of the substrate by discharging liquid in a linear form to the back surface of the substrate, and by processing the back surface of the substrate with laser light that has passed along the liquid and in the liquid.

Abstract: A method for manufacturing a substrate for a liquid discharge head provided with a silicon substrate and a supply port, including: providing the silicon substrate having an insulating layer on a first surface and an etching mask layer having a plurality of apertures on a second surface which is a rear surface of the first surface, wherein the insulating layer is provided in a region ranging from a position opposing the apertures to a position opposing a portion between the adjacent apertures of the mask layer; and forming holes by etching a silicon part of the silicon substrate so that an etched region reaches a portion of the insulating layer opposing the apertures, wherein the silicon wall provided between the adjacent holes is etched so that the portion in the first surface side thereof can be thinner than the portion in the second surface side thereof.

Abstract: Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.

Abstract: A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.

Abstract: The portable terminal includes a display unit configured to display a screen; a first buffer and a second buffer configured to sequentially store display data for the displayed screen; a first determination unit configured to determine whether to perform single-buffer control or double-buffer control based on update data for the displayed screen; and a setting unit configured to set, if single-buffer control is appropriate, a display control method of the display unit to a display control method using the first buffer and to set, if double-buffer control is appropriate, a display control method of the display unit to a display control method using the first buffer and the second buffer.

Abstract: A mobile terminal includes a display unit configured to display a screen generated by combining plural screen layers, four controllers connected to the display unit; wherein a first controller determines whether a transmission specification of a subject screen layer to be updated is enabled upon updating of the screen, a second controller determines whether a size of the subject screen layer to be updated is equal to or larger than a size of a screen displayed by the display unit when the first controller determines “YES”, a third controller determines whether the screen layer to be combined on a back surface of the subject screen layer to be updated exists when the second controller determines “YES”; and a fourth controller controls to disable the transmission specification of the subject screen layer to be updated when the third controller determines “NO”.

Abstract: A rolling guide unit as provided here is capable of raising the degree of flexibility in design and simplifying the control of lubricating oil and has a low sliding resistance to the rolling elements. The rolling guide unit is provided with a cylindrical member 2 through which a rail 1 passes for it to slide on, raceway paths a constituted of a combination of the cylindrical member 2 and the rail 1, circuit paths b formed in the cylindrical member 2 and each making interconnection between the two ends of each of the raceway paths a by way of direction-changing recesses 18, and a plurality of rolling elements 19 placed in the circuit paths b and the raceway paths a. The rolling elements 19 circulate in the circuit paths b and the raceway paths a in accordance with the relative movement between the rail 1 and the cylindrical member 2.

Abstract: A recording head includes ejection ports that eject ink, a first liquid chamber for supplying ink to the ejection ports, a second liquid chamber for supplying ink to the first liquid chamber, a gas reservoir disposed in the upper part of the first liquid chamber and collecting gas, a first outlet through which fluid is discharged out of the gas reservoir, and a pump chamber into which fluid is moved through the first outlet out of the first liquid chamber by producing a pressure difference from the first liquid chamber.

Abstract: A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.

Abstract: A liquid-ejection head includes a substrate, an inlet formed through the substrate, an outlet for ejecting a liquid, a flow channel leading to the outlet, and a pressure-generating part including a pressure-generating element disposed on a surface of the substrate in the flow channel to generate pressure for ejecting the liquid. The flow channel includes a first flow channel defined above the surface of the substrate on which the pressure-generating element is disposed and a second flow channel defined on the substrate down to below the surface on which the pressure-generating element is disposed. The first and second flow channels extend from an opening of the outlet to the pressure-generating element. The second flow channel has a larger width than the first flow channel.

Abstract: An information processing apparatus includes: a first casing; a second casing; a detecting portion that detects whether the first and the second casings are in a closed state or in a turnover open state; a volatile storage medium that stores a first number and a second number indicating the number of times of the closed state and the turnover open state respectively; and an accumulating portion that controls a nonvolatile storage medium to store the first number and the second number updated when the first number is dividable by a first predetermined number or when the second number is dividable by a second predetermined number.

Abstract: A sliding device for use with a variety of machines is reduced in overall length, thereby being compact in construction. The sliding device has a drive train enclosure made airtight and is acceptable for use in a clean environment. The sliding device includes an elongated sliding unit enclosure of airtight construction, a sliding table and a driving motor that is coupled to the drive train enclosure in parallel with the sliding unit enclosure. The drive train enclosure receives a drive train to carry power from the driving motor to the sliding table. The drive train enclosure is mounted with the driving motor while maintaining airtightness.

Abstract: According to the present invention, there are provided an ink jet recording head capable of performing high-precision printing and recording and having a high reliability, and a method of manufacturing the head. The ink jet recording head of the present invention has: an element substrate on whose surface an ink discharge energy generating element is formed and which is made of silicon; and a thin and flat inorganic substrate in which an ink discharge port is formed in a portion disposed vertically above the ink discharge energy generating element. Furthermore, the head includes a photosensitive material layer which bonds the element substrate to the inorganic substrate and which is to constitute a wall forming an ink flow path which communicates with the ink discharge port. The inorganic substrate is laminated on the element substrate provided with the photosensitive material layer, and is thereafter provided with the ink discharge port.

Abstract: A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.

Abstract: In order to form a more homogenous heat generating resistive layer, the present invention provides a method of manufacturing a substrate for an ink jet recording head having a support which has an insulative layer on its surface, a pair of electrode layers disposed on the surface of the support, and a heat generating resistive layer which continuously covers the pair of electrode layers and a section between the pair of electrode layers. The method includes the step of forming an electrode layer on the support and the step of forming the pair of electrode layers by etching the electrode layer. In the step of forming the pair of electrode layers by etching the electrode layer, by etching a surface portion of the insulative layer positioned between the pair of insulative layers, a recess is formed in the surface portion of the insulative layer.

Abstract: A filter capable of separating or filtering micro foreign particles in a flow passage is provided. A first mask and a second mask are formed on a silicon substrate by dry etching. Before performing the dry etching, a resist of the first mask is subjected to a heat treatment performed at a temperature equal to or higher than a glass transition point. A resist of the second mask is not subjected to such a heat treatment. This processing simultaneously forms in the substrate a groove portion and a wall having a hole that is located in the groove portion. A silicon material located beneath a wide portion of the first mask remains as a wall portion separating the holes.

Abstract: Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.

Abstract: A filter capable of separating or filtering micro foreign particles in a flow passage is provided. A first mask and a second mask are formed on a silicon substrate by dry etching. Before performing the dry etching, a resist of the first mask is subjected to a heat treatment performed at a temperature equal to or higher than a glass transition point. A resist of the second mask is not subjected to such a heat treatment. This processing simultaneously forms in the substrate a groove portion and a wall having a hole that is located in the groove portion. A silicon material located beneath a wide portion of the first mask remains as a wall portion separating the holes.

Abstract: Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.