Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

Abstract: A data search apparatus according to an embodiment includes: an input unit; and a storage apparatus configured to store master data names managed with master data.

Abstract: A method of manufacturing a mold by a machine tool, the method including predicting a thermal fatigue life of a mold which is made of a mold material having a hardness H and on which heating during contact with a workpiece and cooling after contact with a workpiece are repeated, the method including a step for obtaining a thermal stress maximum value ?h_MAX among a plurality of thermal stress values at a position x on the mold and a temperature Th at the thermal stress maximum value, wherein the temperature at the thermal stress maximum value ?h_MAX is a temperature lower than a maximum temperature among the plurality of temperatures, the machine tool manufactures the predetermined mold shape from a mold material having one of the plurality of hardnesses in which the thermal fatigue life was obtained based on the thermal stress maximum value, the yield strength, and the contraction.

Abstract: A network management device according to an embodiment includes network property storage means for storing information representing network properties, information object storage means for storing an information object relating to a network configuration corresponding to information representing network properties stored in the network property storage means, network property acquisition means for acquiring, from the network property storage means, information representing network properties corresponding to an optional protocol layer, information object acquisition means for acquiring, from the information object storage means, the information object corresponding to information representing network properties acquired by the network property acquisition means, and display means for displaying the information object acquired by the information object acquisition means.

Abstract: A method of fabricating a semiconductor device, which includes a separation step and has a high yield, is provided. A metal layer is formed over a substrate, fluorine is supplied to the metal layer, and the metal layer is then oxidized, whereby a metal compound layer is formed. A functional layer is formed over the metal compound layer, heat treatment is performed on the metal compound layer, and the functional layer is separated from the substrate with use of the metal compound layer. By performing first plasma treatment using a gas containing fluorine, fluorine can be supplied to the metal layer. By performing second plasma treatment using a gas containing oxygen, the metal layer supplied with fluorine can be oxidized.

Abstract: A novel electrical module that is highly convenient or reliable is provided. A novel display panel that is highly convenient or reliable is provided. A novel display device that is highly convenient or reliable is provided. The functional layer includes an element, a conductive film, and an intermediate layer and the element is electrically connected to the conductive film. The intermediate layer includes an opening portion and a first surface, the opening portion overlaps with the conductive film, the opening portion includes a side end portion, and the side end portion is in contact with the conductive film. Moreover, the first surface includes a first region, the first region is positioned at the periphery of the opening portion, and the first region is in contact with the conductive film.

Abstract: A control device comprises a first interface, a second interface, a processor, and a third interface. A first interface is configured to acquire a captured image of an article. A second interface is configured to transmit and receive data to and from an input/output device. A processor is configured to cause the input/output device to display an article image based on the captured image, receive an input of a position and an angle of a grip portion model of a grip portion that grips the article from the input/output device through the second interface, display the grip portion model on the article image, and generate a gripping plan. A third interface configured to transmit the gripping plan to a control unit of a gripping device including the grip portion.

Abstract: A light-emitting device capable of long-time display in a bent state is provided. A light-emitting device that can be repeatedly bent with a small radius of curvature is provided. The flexible light-emitting device includes a light-emitting element, a first inorganic insulating layer, a second inorganic insulating layer, and a first organic insulating layer. The first organic insulating layer is positioned over the first inorganic insulating layer. The light-emitting element is positioned over the first inorganic insulating layer with the first organic insulating layer therebetween. The second inorganic insulating layer is positioned over the light-emitting element. An end portion of the first inorganic insulating layer and an end portion of the second inorganic insulating layer are each positioned inward from an end portion of the first organic insulating layer. The end portion of the first organic insulating layer is exposed on a side surface of the light-emitting device.

Abstract: A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.

Abstract: First and second memory cell arrays each having memory cells arranged in the X and Y directions lie side by side in the Y direction with space between them. A relay buffer is provided between first and second row decoders for buffering a control signal to be supplied to the second row decoder. An inter-array block between the first and second memory cell arrays is constituted by at least either a tap cell or a dummy memory cell. The relay buffer and the inter-array block are the same in position and size in the Y direction.

Abstract: An operation apparatus for outputting a request to a management apparatus which manages a Network Service (NS) constructed on a NetWork (NW) including a core NW serving as a virtualization area and an access NW serving as a non-virtualization area including: a storage unit configured to store new configuration information obtained by updating NW configuration information indicating an NW configuration including devices disposed on the NW due to a fault of the NS, a catalog which is a template of the NS, a record describing a lifecycle of the NS, and an order for requesting the management apparatus to control the NS; an optimal configuration determination unit configured to determine an optimal configuration of the NS based on the new configuration information, the catalog, the record, and the order; and an order generation unit configured to generate a change order for changing an NS configuration of the NS to the optimal configuration determined by the optimal configuration determination unit.

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

Abstract: A novel electrical module that is highly convenient or reliable is provided. A novel display panel that is highly convenient or reliable is provided. A novel display device that is highly convenient or reliable is provided. The functional layer includes an element, a conductive film, and an intermediate layer and the element is electrically connected to the conductive film. The intermediate layer includes an opening portion and a first surface, the opening portion overlaps with the conductive film, the opening portion includes a side end portion, and the side end portion is in contact with the conductive film. Moreover, the first surface includes a first region, the first region is positioned at the periphery of the opening portion, and the first region is in contact with the conductive film.

Abstract: A network management device according to an embodiment includes network property storage means for storing information representing network properties, information object storage means for storing an information object relating to a network configuration corresponding to information representing network properties stored in the network property storage means, network property acquisition means for acquiring, from the network property storage means, information representing network properties corresponding to an optional protocol layer, information object acquisition means for acquiring, from the information object storage means, the information object corresponding to information representing network properties acquired by the network property acquisition means, and display means for displaying the information object acquired by the information object acquisition means.

Abstract: A method of fabricating a semiconductor device, which includes a separation step and has a high yield, is provided. A metal layer is formed over a substrate, fluorine is supplied to the metal layer, and the metal layer is then oxidized, whereby a metal compound layer is formed. A functional layer is formed over the metal compound layer, heat treatment is performed on the metal compound layer, and the functional layer is separated from the substrate with use of the metal compound layer. By performing first plasma treatment using a gas containing fluorine, fluorine can be supplied to the metal layer. By performing second plasma treatment using a gas containing oxygen, the metal layer supplied with fluorine can be oxidized.

Abstract: Display unevenness in a display panel is suppressed. A display panel with a high aperture ratio of a pixel is provided. The display panel includes a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and an auxiliary wiring. The first common layer is positioned over the first pixel electrode and the second pixel electrode. The first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer. The second common layer is positioned over the third pixel electrode. The second common layer has a portion overlapping with the third light-emitting layer.

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

Abstract: First and second memory cell arrays each having memory cells arranged in the X and Y directions lie side by side in the Y direction with space between them. A relay buffer is provided between first and second row decoders for buffering a control signal to be supplied to the second row decoder. An inter-array block between the first and second memory cell arrays is constituted by at least either a tap cell or a dummy memory cell. The relay buffer and the inter-array block are the same in position and size in the Y direction.