Patents by Inventor Masataka Watanabe

Masataka Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5759264
    Abstract: A method for a vapor-phase growth of a GaAs.sub.1-x P.sub.x epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs.sub.1-x P.sub.x epitaxial layer (wherein x stands for an alloy composition satisfying the expression, 0.ltoreq.x.ltoreq.1) to be formed on a plurality of semiconductor single crystal substrates 1 by setting the semiconductor single crystal substrates 1 in place on a wafer holder 16 disposed inside a vapor-phase growth apparatus 30 in an amount of not less than 70% as the covering ratio of the total surface area of the substrates to the surface area of the wafer holder 16.
    Type: Grant
    Filed: March 21, 1996
    Date of Patent: June 2, 1998
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Masataka Watanabe, Tsuneyuki Kaise, Masayuki Shinohara, Masahisa Endo
  • Patent number: 5232855
    Abstract: The present invention provides an axenic mass culture apparatus comprising a light source for illuminating an entire surface of a culture liquid in a culture tank. According to the present invention, it is possible to achieve a light-illuminating type high-speed axenic mass culture of biotic cells.
    Type: Grant
    Filed: September 21, 1992
    Date of Patent: August 3, 1993
    Assignee: National Institute for Environmental Studies
    Inventors: Masataka Watanabe, Kunio Kohata
  • Patent number: 5097897
    Abstract: A heat exchanging device includes two heat exchangers, each of the heat exchangers including a metal plate and a pipe attached to the plate for conducting a heat exchanging medium, the plate with the pipe being bent into a winding, and the heat exchangers being arranged with respective axes of winding aligned with each other and with any opposite faces of the heat exchangers positioned with a specified distance not to come in contact with each other.
    Type: Grant
    Filed: December 21, 1989
    Date of Patent: March 24, 1992
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masataka Watanabe, Toshimi Hosokawa
  • Patent number: 5059401
    Abstract: A monocrystal growing apparatus having a separator provided in a chamber-defining housing for separating the part of a polycrystal rod supported by a vertical shaft, to produce a melt between the polycrystal rod and a seed crystal, from the doping gas atmosphere used during the melting operation. The separator is open to the chamber near the melt and a device passed an inert gas into the separator to prevent the doping gas from invading the chamber. The apparatus produces a monocrystal rod of a constant resistivity along its rod.
    Type: Grant
    Filed: July 26, 1990
    Date of Patent: October 22, 1991
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Masataka Watanabe, Eiichi Machida
  • Patent number: 5051242
    Abstract: A coil for use in growing a single crystal by using a floating zone method is formed as an annular single-turn coil having a wedge-like configuration in vertical section so as to progressively increase in thickness from inner circumference to outer circumference of the coil. The surface of the annular body of the coil positioned on the polycrystalline side is radially sloped upward, around the circumferences, with an elevation angle with respect to a plane perpendicular to the crystal growth axis. The coil has an annular thin projection, which projects upwardly from the coil on the polycrystalline side, is planted at or near the inner circumference thereof.
    Type: Grant
    Filed: April 20, 1990
    Date of Patent: September 24, 1991
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Masataka Watanabe, Katsumi Ichimura
  • Patent number: 4931945
    Abstract: A method of controlling a floating zone applied to a crystal manufacturing system based on the FZ method and designed to enable the diameter at the crystallization boundary and the axial length of the floating zone or other similar quantities to desired values, in which a floating zone (20) is imaged with an imaging device (30); geometric quantities of the floating zone is measured from the image thereby obtained; the electric power (P) supplied to an induction heating coil (12) and the speed (V.sub.p) at which a raw-material rod (16) is moved relative to the induction heating coil so that the geometric quantities become equal to desired values. The geometric values include one Z.sub.i of the axial length of the floating zone, the distance (L) between the induction heating coil and a crystallization boundary (24) and the diameter (D.sub.n) of a melt neck portion located on the side of the crystallization boundary at a predetermined distance from the induction heating coil, and one D.sub.i of the diameter (D.
    Type: Grant
    Filed: December 5, 1988
    Date of Patent: June 5, 1990
    Assignee: Shin-Etsu Handotai Company Limited
    Inventors: Kenichi Taguchi, Masataka Watanabe
  • Patent number: 4876438
    Abstract: An apparatus for use in a crystal manufacturing system based on a floating zone method or Czochralski method, adapted to control a quantity relating to the diameter of a crystal rod at the crystallization boundary, and designed to reduce hunting in the control of the quantity relating to the crystal diameter so as to prevent disturbance in crystallization and reduce irregularities in the surface of the crystal rod even if there is a discrepancy between a predetermined pattern and the ideal pattern with respect to the quantity to be controlled.
    Type: Grant
    Filed: June 3, 1988
    Date of Patent: October 24, 1989
    Assignee: Shin-Etu Handotai Co., Ltd.
    Inventors: Masataka Watanabe, Nobuhiro Ohhara, Kenichi Taguchi
  • Patent number: 4866230
    Abstract: In a method of controlling a floating zone of a semiconductor rod of the present invention shown in FIG. 1, the diameter D.sub.s at a crystallization boundary of a crystal and the axial length of the floating zone are indirectly controlled by controlling a diameter D.sub.m of a crystallizing-side melt shoulder portion and the diameter D.sub.n of a constricted melt portion, respectively. Since these diameters D.sub.m and D.sub.n are used for predicting D.sub.s and L to be obtained after a given time has passed, the response speed and stability of the control are improved as compared with the direct control of D.sub.s and L. An apparatus for controlling a floating zone of a semiconductor rod of the present invention performs the above-described method. In another method, the zone length is directly or indirectly controlled by regulating a relative moving speed of the melting-side semiconductor rod relative to the heater, and the diameter D.sub.
    Type: Grant
    Filed: December 11, 1987
    Date of Patent: September 12, 1989
    Assignee: Shin-Etu Handotai Company, Limited
    Inventors: Yasuhiro Ikeda, Kunio Suzuki, Masataka Watanabe, Nobuhiro Ohara
  • Patent number: 4770194
    Abstract: In a method of manufacturing wrinkled sheet tobacco by wetting a raw material powder containing tobacco with water, extruding the resultant wet powder through a gap between a pair of rollers, and separating sheet tobacco attached to the surface of one roller with a doctor knife, one of the substances selected from those enumerated below is added to the raw material powder in an amount specified below: (1) 4 to 10% by weight of an .alpha.-starch or propylene glycol alginate ester, (2) 4 to 11% by weight of a hydrolyzed starch having a molecular weight of 100,000 to 900,000, gum arabic, a carboxymethyl cellulose salt having a molecular weight of 10,000 to 20,000, or a high methoxyl pectin having a degree of methoxylation of 7 to 17% and a degree of esterification of 62 to 77%, and (3) a mixture of 1.9 to 7.9% by weight of a 4,4,6-triglucosaccharide polymer and 1.3 to 3.2% by weight of sodium carboxymethyl cellulose.
    Type: Grant
    Filed: November 7, 1986
    Date of Patent: September 13, 1988
    Assignee: Japan Tobacco, Inc.
    Inventors: Yukinari Ohashi, Norio Furuya, Satoru Kataoka, Masataka Watanabe
  • Patent number: 4068670
    Abstract: A smoking composition comprising, as one component, an ester of one or more aliphatic acids and a carbohydrate including cellulose, starch, and the like. The smoking composition is mild and non-irritating, has no off-flavor, and no unpleasant aftertaste remains after smoking.
    Type: Grant
    Filed: November 10, 1975
    Date of Patent: January 17, 1978
    Assignees: Daicel Ltd., The Japan Tobacco & Salt Public Corporation
    Inventors: Hiromu Yokota, Hajime Namikoshi, Masataka Watanabe, Kunio Kato, Akio Ohnishi