Abstract: An image recording system is provided with an image data producing apparatus to produce and output halftone dot image data corresponding to a single sheet of output image, for each of plural colors successively; an image recording apparatus having a drum, a rotation driving mechanism, an optical unit to expose the light sensitive material on the drum to plural color light simultaneously in accordance with the halftone dot image data of plural (N≧3) colors, and a sub-scanning mechanism to move the optical unit in a direction parallel to a rotation axis of the drum; and an image data storing apparatus to store the halftone dot image data and to output the halftone dot image data to the image recording apparatus, the image data storing apparatus comprising plural memory devices each storing the halftone dot image data corresponding to a single sheet of the output image for one of plural (N or N−1) colors.

Abstract: A laser apparatus capable of suppressing an influence of return light with respect to an optical output without causing an increase of a number of parts, an enlargement of the entire apparatus, or an increase of a power consumption, including a semiconductor laser having an optical resonator provided with a pair of opposing reflection mirrors, in which a resonator length is set to Lin, constituted so as to obtain a constant optical output from the optical resonator under constant drive conditions, and set so that reflectivities Rf and Rr of the reflection mirrors absorb a change of an output light intensity due to a change of the phase of the return light.

Abstract: In a semiconductor light emitting device configured to extract light through a substrate thereof, an electrode layer is formed on a p-type semiconductor layer (such as p-type GaN layer) formed on an active layer, and a nickel layer is formed as a contact metal layer between the electrode layer and the p-type semiconductor layer and adjusted in thickness not to exceed the intrusion length of light generated in the active layer. Since the nickel layer is sufficiently thin, reflection efficiency can be enhanced.

Abstract: A crystal growth method includes forming a mask layer capable of impeding crystal growth on a substrate in such a way a first nitride semiconductor layer has irregularities at a surface thereof exposed at a window region opened at a part of the mask layer, and growing a second nitride semiconductor layer over a region including the surface of the mask layer through crystal growth from the irregularities. Through-type dislocations can be reliably prevented from propagation due to the discontinuity of crystals at the irregularities and also to lateral crystal growth.

Abstract: An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract: Disclosed are a crystal layer separation method capable of separating a crystal layer formed on a substrate therefrom without occurrence of any crack, and a laser irradiation method used therefor, and a method of fabricating devices using the same. The crystal layer separation method includes the step of separating a crystal layer made from a GaN based compound formed on a sapphire substrate therefrom by irradiating the crystal layer with a laser beam from the back surface of the substrate, wherein the crystal layer is irradiated with the laser beam in a line-shape. In this method, an irradiation width of the laser beam is preferably equal to or less than a thickness of the crystal layer, and the laser beam preferably has a light intensity distribution smoothened in the width direction.

Abstract: A semiconductor light-emitting element having a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity is provided. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, and a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a plurality of light-emitting wavelength region whose emission wavelengths differ from one another.

Abstract: Disclosed herein is a process for vapor phase growth of gallium nitride compound semiconductor which yields uniform crystal layers with good reproducibility. The process comprises forming a first nitride semiconductor layer on a substrate, forming thereon a protective film for crystal growth prevention in such a way that it has partly open window regions through which the first nitride semiconductor layer is exposed, forming a second nitride semiconductor layer by selective growth from the first nitride semiconductor layer at a crystal growth starting temperature, and continuing crystal growth at a temperature higher than the crystal growth starting temperature. The vapor phase growth at a low temperature yields a uniform crystal layer, and the ensuing vapor phase growth at a raised temperature yields a uniform crystal layer with good reproducibility in conformity with the first crystal layer.

Abstract: A laser apparatus capable of suppressing an influence of return light with respect to an optical output without causing an increase of a number of parts, an enlargement of the entire apparatus, or an increase of a power consumption, including a semiconductor laser having an optical resonator provided with a pair of opposing reflection mirrors, in which a resonator length is set to Lin, constituted so as to obtain a constant optical output from the optical resonator under constant drive conditions, and set so that reflectivities Rf and Rr of the reflection mirrors absorb a change of an output light intensity due to a change of the phase of the return light.

Abstract: A semiconductor light emitting device includes a crystal growth layer, and a crystal layer composed of a first conductive type layer, an active layer, and a second conductive type layer. The crystal layer is provided on the upper side of the crystal growth layer. In this device, a back plane of the crystal growth layer has irregularities. Since light generated in the device is prevented from being totally reflected from the back plane of the crystal growth layer, the light emergence efficiency of the device can be increased.

Abstract: A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device.

Abstract: A method of fabricating a semiconductor laser device includes the steps of forming semiconductor layers composed of a first conductive type cladding layer, an active layer, and a second conductive type cladding layer on a substrate, and peeling a device formation region of the semiconductor layers from the substrate and simultaneously forming a resonance mirror on an end portion of the device formation region by irradiating the device formation region with energy beams traveling from the back surface side of the substrate. With this configuration, it is possible to peel a device from a substrate and also form a flat resonance mirror with less damage of crystal by laser abrasion, and further to easily form a high quality resonance mirror without increasing the number of fabrication steps.

Abstract: There is described an image-forming apparatus, which can prevent unevenness of an image by controlling the brightness of light-sources. The apparatus includes a light source, including a plurality of light-emitting elements aligned within a predetermined width; an exposure-controlling section to individually control each of intensities of light beams emitted by the plurality of light-emitting elements; and a memory section to store light-intensity compensation data for each of the plurality of light-emitting elements. The image is formed by simultaneously exposing the light beams aligned within the predetermined width onto the photosensitive recording medium, and the exposure-controlling section controls each of the plurality of light-emitting elements based on the light-intensity compensation data concerned, so that each of intensities of the light beams substantially coincides with each of target intensities set in advance.

Abstract: Semiconductor light emitting devices and a method of fabricating the semiconductor light emitting devices are provided. The semiconductor light emitting device includes a growth substrate, a first growth layer formed on the growth substrate, a growth obstruction film formed on the first growth layer, and a second growth layer formed by selective growth from an opening portion formed in the growth obstruction film, wherein device isolation trenches for isolating devices from each other are formed in the first growth layer formed on the growth substrate, and the second growth layer is formed by selective growth after formation of the device isolation trenches.

Abstract: Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.

Abstract: Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming an active layer on a substrate by vapor phase growth at a first temperature and forming thereon one or more nitride semiconductor layers at a temperature which is greater from the first temperature, such as by about 250° C. or less. The nitride semiconductor devices of the present invention can be used in a variety of different applications.

Abstract: A display unit and semiconductor light emitting devices are provided. The display unit includes a number of the semiconductor light emitting devices arrayed on a base body, wherein each of the semiconductor light emitting devices is formed together with dummy devices for setting an emission wavelength of the semiconductor light emitting device, and the semiconductor light emitting device is formed by selective growth, and one conductive layer is formed in self-alignment on planes grown from tilt planes formed by selective growth. Such a display unit has a structure suitable for multi-colors without increasing the number of production steps.