Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract: According to one embodiment, a liquid crystal display device includes an array substrate including a first color filter configured to transmit light in a first wavelength range, a second color filter configured to transmit light in a second wavelength range of greater wavelengths than the first wavelength range, a first switching element disposed above the second color filter, a second switching element disposed above the second color filter, a first pixel electrode which is electrically connected to the first switching element and is located above the first color filter, and a second pixel electrode which is electrically connected to the second switching element and is located above the second color filter.

Abstract: According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film.

Abstract: According to one embodiment, a liquid crystal display device includes an array substrate including a first color filter configured to transmit light in a first wavelength range, a second color filter configured to transmit light in a second wavelength range of greater wavelengths than the first wavelength range, a first switching element disposed above the second color filter, a second switching element disposed above the second color filter, a first pixel electrode which is electrically connected to the first switching element and is located above the first color filter, and a second pixel electrode which is electrically connected to the second switching element and is located above the second color filter.

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract: According to one embodiment, a liquid crystal display device includes an array substrate including a first color filter configured to transmit light in a first wavelength range, a second color filter configured to transmit light in a second wavelength range of greater wavelengths than the first wavelength range, a first switching element disposed above the second color filter, a second switching element disposed above the second color filter, a first pixel electrode which is electrically connected to the first switching element and is located above the first color filter, and a second pixel electrode which is electrically connected to the second switching element and is located above the second color filter.

Abstract: Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

Abstract: There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

Abstract: A structure of a plurality of thin film transistors wherein a peripheral circuit on a glass substrate of a liquid crystal display panel; and each of polycrystalline silicon thin film 13 of the thin film transistor is formed on the glass substrate; and each of gate electrode 15 is formed on a gate insulation layer, and each of the gate electrode 15 is overhead corresponding to the polycrystalline silicon thin film 13 for a channel; wherein the gate electrode 15 is comprised a pair of projection part 15A and a gate-channel 15B; and wherein the pair of projection part 15A is formed the both sides of the gate-channel 15B in which the side is for along the channel-direction, and wherein the pair of projection part 15A is enlarged for across the channel-direction.

Abstract: A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

Abstract: A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

Abstract: A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

Abstract: A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.

Abstract: Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

Abstract: A structure of a plurality of thin film transistors wherein a peripheral circuit on a glass substrate of a liquid crystal display panel; and each of polycrystalline silicon thin film 13 of the thin film transistor is formed on the glass substrate; and each of gate electrode 15 is formed on a gate insulation layer, and each of the gate electrode 15 is overhead corresponding to the polycrystalline silicon thin film 13 for a channel; wherein the gate electrode 15 is comprised a pair of projection part 15A and a gate-channel 15B; and wherein the pair of projection part 15A is formed the both sides of the gate-channel 15B in which the side is for along the channel-direction, and wherein the pair of projection part 15A is enlarged for across the channel-direction.

Abstract: A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (Ws) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (Wd) of the junction face between the above channel region and the drain region.

Abstract: A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.

Abstract: A laser anneal apparatus is provided with a laser source; a homogenizing optical system disposed in an optical path of laser light emitted from the laser source to homogenize an intensity distribution of the laser light in a section which is perpendicular to the optical path; a phase shifter disposed in the optical path of the laser light passed through the homogenizing optical system to produce an intensity distribution pattern of the laser light in the section which is perpendicular to the optical path; a photoreceptor device disposed in the optical path of the laser light passed through the phase shifter to intercept a part of the laser light and to measure a quantity of the intercepted laser light; and an image-forming optical system disposed in the optical path of the laser light passed through the photoreceptor device to focus the laser light on a substrate to be treated.

Abstract: A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.