Abstract: A vehicle is a vehicle that is equipped with an illumination device in a vehicle cabin and that is capable of traveling in an EV mode, the vehicle being configured to change a manner of luminescence of the illumination device when the vehicle enters a low emission zone (LEZ) where the vehicle needs to travel in the EV mode, and to cause a driver to perceive the entrance. For the change in the manner of the luminescence, for example, the color of the luminescence of the illumination device may be changed from a regular color to a specific color. By the change in the manner of the luminescence of the illumination device, it is possible to cause the driver to sensorily recognize the entrance to the low emission zone.

Abstract: A semiconductor device includes a base member, a semiconductor chip, and a conductive member. The base member includes a first surface, a second surface opposite to the first surface, and a protrusion at the second surface side. The semiconductor chip is mounted on the second surface of the base member. The semiconductor chip includes first and second electrodes, a control pad, and a semiconductor part. The semiconductor part has front and back surfaces; the first electrode is provided on the back surface; and the second electrode and the control pad are provided on the front surface. The conductive member bonded on the second electrode via a connection member. The connection member includes a side surface extending along a space between the second electrode and the control pad. The protrusion of the base member overlaps the second connection member and extends along the side surface of the connection member.

Abstract: According to one embodiment, a semiconductor chip includes a first electrode, a semiconductor layer, a second electrode, a third electrode, and a metallic layer. The semiconductor layer includes a first portion, a second portion, and a third portion that is located between the first portion and the second portion. The semiconductor layer is provided on a first side of the first electrode in a first direction. The second electrode is over the first portion in the first direction. The third electrode is over the second portion in the first direction. The metallic layer is provided on a second side of the first electrode and is under the third portion in the first direction.

Abstract: A resist composition containing a metal compound, in which a structure of the metal compound is changed upon exposure, and the metal compound exhibits changed solubility in a developing solution, in which the metal compound includes a cubane-structured metal oxide.

Abstract: A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, which contains a resin component (A1) exhibiting changed solubility in a developing solution under action of acid, the resin component (A1) has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents a cyclic acid dissociable group, q represents an integer in a range of 0 to 3, and n represents an integer of 1 or more, provided that n?q×2+4 is satisfied

Abstract: An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rp01 represents a hydrogen atom or the like; Vp01 represents a single bond or a divalent linking group; Rp02 and Rp03 each independently represents a hydrocarbon group which may have a substituent, or Rp02 and Rp03 are mutually bonded to form a ring; Rp04 represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rp05 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rp06 represents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4

Abstract: A resist composition containing a resin component (A1) having a constitutional unit derived from a compound represented by General Formula (a01-1).

Abstract: Organically modified metal oxide nanoparticles containing two or more cores including a plurality of metal atoms and a plurality of oxygen atoms covalently bonded to the plurality of metal atoms; a first modifying group that is a ligand coordinated to each of the cores and selected from the group consisting of a carboxylic acid carboxylate, a sulfonic acid sulfonate, and a phosphonic acid phosphonate; and a second modifying group that is coordinated to each of the cores and is a ligand having a structure different from that of the first modifying group and/or an inorganic anion, in which organically modified metal oxide nanoparticles have a structure in which the cores are crosslinked through a coordinate bond by at least the first modifying group.

Abstract: A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rx1 to Rx4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rx1 to Rx4 may be mutually bonded to form a ring structure; Ry1 and Ry2 represents a hydrogen atom or a hydrocarbon group, or Ry1 and Ry2 may be mutually bonded to form a ring structure; Rz1 to Rz4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rz1 to Rz4 may be mutually bonded to form a ring structure; provided that at least one of Rx1 to Rx4, Ry1, Ry2 and Rz1 to Rz4 has an anionic group; and Mm+ represents an m-valent organic cation).

Abstract: A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1), and an acid generator component composed of an anion moiety and a cation moiety. In General Formula (a01-1), W1 represents a polymerizable group-containing group, Ct represents a tertiary carbon atom, R11 represents an unsaturated hydrocarbon group which may have a substituent, R12 and R13 represent a chain saturated hydrocarbon group which may have a substituent, and a carbon atom at an ?-position of Ct constitutes a carbon-carbon unsaturated bond.

Abstract: A resist composition which generates an acid when the resist composition is exposed and whose solubility with respect to a developing liquid varies by action of the acid. The resist composition contains a base material component whose solubility with respect to a developing liquid is varied by action of an acid and an acid generator component that generates an acid when the acid generator component is exposed. The base material component contains a polymer compound that includes a constituent represented by a general formula (a-1) described in the specification and a constituent (a2) represented by a general formula (a-2) described in the specification. The acid generator component contains a compound represented by a general formula (b1) described in the specification.

Abstract: A resist composition including a compound represented by formula (b1) in which Rb1 represents an aryl group which may have a substituent; Rb2 and Rb3 each independently represents an aryl group which may have a substituent or an alkyl group which may have a substituent; provided that at least one of the aryl group represented by Rb1 and the aryl group or the alkyl group represented by Rb2 or Rb3 has a substituent containing a halogen atom, and at least one of the aryl group represented by Rb1 and the aryl group or the alkyl group represented by Rb2 or Rb3 has a substituent containing a sulfonyl group; and X? represents a counteranion

Abstract: A resist composition that generates an acid upon exposure is soluble in a developing solution, and is changed by action of an acid. The resist composition contains a resin component having solubility in a developing solution, which is changed by action of an acid, and has a constitutional unit represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a single bond or a linking group; Ax represents a sulfonyl group or a sulfoxide group; and Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group.

Abstract: A resist composition that generates an acid upon exposure and has solubility in a developing solution, which is changed by action of an acid, the resist composition containing a resin component having a constitutional unit represented by General Formula (a01-1) and a constitutional unit represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a linking group; Ax represents a sulfonyl group or a sulfoxide group; Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group; s0 and v0 represent an integer of 0 to 6; and 1?s0+v0?6 and u0?s0+v0.

Abstract: A semiconductor device includes a semiconductor part of a first conductivity type, a trench being provided in the semiconductor part at a front surface side; a first electrode provided on a back surface of the semiconductor part; a second electrode provided on the front surface of the semiconductor part; a first semiconductor layer of a second conductivity type provided inside the trench; and a insulating film electrically isolating the first semiconductor layer from the semiconductor part. The second electrode is electrically connected to the semiconductor part and the first semiconductor layer. The second electrode contacts the semiconductor part with a rectification property.

Abstract: A resist composition including a base component and an acid generator component, the base component including a resin component having a structural unit (a0) represented by general formula (a0) shown below, and the acid generator component containing at least one of a compound (b-1), a compound (b-2) and a compound (b-3) represented by general formula (b-3) shown below in which Wa represents a divalent aromatic hydrocarbon group; Ra00 represents an acid dissociable group; R101, R104 and R106 each independently represents a hydrocarbon group containing an aromatic ring; R105, R107 and R108 each independently represents a cyclic group, a chain alkyl group which may have a substituent or a chain alkenyl group; R102 represents a fluorine atom or a fluorinated alkyl group of 1 to 5 carbon atoms and M?m+ represents an m-valent onium cation.

Abstract: A semiconductor device includes a semiconductor part of a first conductivity type, a trench being provided in the semiconductor part at a front surface side; a first electrode provided on a back surface of the semiconductor part; a second electrode provided on the front surface of the semiconductor part; a first semiconductor layer of a second conductivity type provided inside the trench; and a insulating film electrically isolating the first semiconductor layer from the semiconductor part. The second electrode is electrically connected to the semiconductor part and the first semiconductor layer. The second electrode contacts the semiconductor part with a rectification property.

Abstract: According to one embodiment, a semiconductor device includes first and second metal members, and a semiconductor element. The first metal member is electrically connected to a first terminal. The semiconductor element includes first and second electrodes, first to third semiconductor regions, and a gate electrode. The second metal member is provided on the second electrode, and electrically connected to the second electrode and a second terminal. The semiconductor element includes a first portion that overlaps the second metal member in the first direction, and a second portion that does not overlap the second metal member in the first direction. A length in the second direction of the first semiconductor region between an adjacent pair of the gate electrodes is greater than a length in the second direction of the first semiconductor region between an adjacent pair of the gate electrodes.

Abstract: A resist composition that contains a resin component having a constitutional unit represented by General Formula (a0-1) and a compound (B1) represented by General Formula (b0), in which Ra01 represents a hydrocarbon group; Ya02 represents a single bond or a divalent linking group; Ra02 represents a hydrogen atom, a hydroxy group, or a hydrocarbon group; Ar represents a benzene ring or a naphthalene ring; Ra01 and Ra02 may be bonded to each other to form a ring with a secondary carbon atom to which Ra01 and Ya02 are bonded, Ya02, a carbon atom of Ar, to which Ya02 is bonded, and a carbon atom of Ar, to which Ra02 is bonded; n01 represents an integer in a range of 1 to 6; Rb1 represents a fluorine atom or a trifluoromethyl group

Abstract: A resist composition containing a resin component that exhibits changed solubility in a developing solution under action of acid and a photodecomposable base that controls the diffusion of the acid generated upon exposure, the resin component has a constitutional unit represented by General Formula (a0-1), and the photodecomposable base has an anion moiety and a cation moiety, where the energy of LUMO of the cation moiety is ?4.