Abstract: A resist composition that generates an acid upon exposure is soluble in a developing solution, and is changed by action of an acid. The resist composition contains a resin component having solubility in a developing solution, which is changed by action of an acid, and has a constitutional unit represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a single bond or a linking group; Ax represents a sulfonyl group or a sulfoxide group; and Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group.

Abstract: A resist composition that generates an acid upon exposure and has solubility in a developing solution, which is changed by action of an acid, the resist composition containing a resin component having a constitutional unit represented by General Formula (a01-1) and a constitutional unit represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a linking group; Ax represents a sulfonyl group or a sulfoxide group; Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group; s0 and v0 represent an integer of 0 to 6; and 1?s0+v0?6 and u0?s0+v0.

Abstract: A resist composition including a base material component (A), an acid-generator component (B) and a photodegradable base (D1), the base material component (A) including a resin component (A1) having a structural unit (a10), at least one of the acid-generator component (B) and the photodegradable base (D1) including a compound (BD1), and a total amount of the acid-generator component (B) and the photodegradable base (D1) being 25 parts by weight or more, relative to 100 parts by weight of the base material component (A) (in formula (a10-1), Wax1 represents an aromatic hydrocarbon group which may have a substituent; in formula (bd1), R001 to R003 represents a monovalent organic group, and at least one has an acid dissociable group)

Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer, a first electrode, and a first insulating film. The first electrode extends in a first direction and is provided inside the semiconductor layer. The first insulating film is provided between the semiconductor layer and the first electrode, a thickness of the first insulating film in a direction from the first electrode toward the semiconductor layer increasing in stages along the first direction. The first insulating film has three or more mutually-different thicknesses.

Abstract: A resist composition including a resin component having a structural unit (a0) represented by general formula (a0) in which Va0 represents a linear or branched alkylene group, a linear or branched fluorinated alkylene group, —Y01—O—C(?O)—Y02— or —Y01—C(?O)—O—Y02—; Y01 and Y02 each independently represents a linear or branched alkylene group; Ya0 represents a carbon atom; Xa0 represents a group which forms a monocyclic hydrocarbon group together with Ya0, provided that part or all of the hydrogen atoms of the cyclic hydrocarbon group may be substituted with a substituent; Ra00 represents a hydrocarbon group which may have a substituent; provided that at least one of Xa0 and Ra00 has a carbon-carbon unsaturated bond at an ?-position of Ya0.

Abstract: A semiconductor device includes a semiconductor part of a first conductivity type, a trench being provided in the semiconductor part at a front surface side; a first electrode provided on a back surface of the semiconductor part; a second electrode provided on the front surface of the semiconductor part; a first semiconductor layer of a second conductivity type provided inside the trench; and a insulating film electrically isolating the first semiconductor layer from the semiconductor part. The second electrode is electrically connected to the semiconductor part and the first semiconductor layer. The second electrode contacts the semiconductor part with a rectification property.

Abstract: A resist composition including a resin component having a structural unit derived from a compound represented by formula (a0-1), in which W represents a polymerizable group-containing group; Ra01 represents an alkyl group or an aromatic heterocyclic group containing an oxygen atom or a sulfur atom; in the case where Ra01 is an aromatic heterocyclic group containing an oxygen atom or a sulfur atom, Ra02 is a group which forms an aliphatic cyclic group containing an electron-withdrawing group, together with the tertiary carbon atom (*C) to which Ra01 is bonded; and when Ra01 is an alkyl group, Ra02 is a group in which an aliphatic cyclic group containing an electron-withdrawing group forms a condensed ring together with an aromatic heterocyclic group containing an oxygen atom or a sulfur atom.

Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, each comprising a first part, on the first semiconductor region, wherein the second semiconductor regions are spaced apart in a first direction, a third semiconductor region of the first conductivity type on each of the second semiconductor regions, an insulation portion between two of the second semiconductor regions, the insulation portion having one side in contact with one of the first parts and the other side in contact with one of the third semiconductor regions, a first electrode within the insulation portion, a gate electrode spaced apart from the first electrode and within the insulation portion, and a second electrode on the third semiconductor region and electrically connected to the first electrode and the third semiconductor region.

Abstract: A light source device comprises: an excitation light source configured to generate excitation light; a wavelength conversion member including a base and a phosphor layer which is provided on the base and configured to convert the excitation light into fluorescence; and a converging optical system including a converging lens for converging the excitation light on the phosphor layer, wherein the light source device further comprises a housing for accommodating the wavelength conversion member, the excitation light source is provided outside the housing, a wall surface of the housing includes a lens hole into which the converging lens is inserted, and the converging lens which is inserted into the lens hole and the wall surface of the housing isolate an internal space of the housing from an outer space of the housing.

Abstract: According to an embodiment, a semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a conductive portion, a gate electrode, and a second electrode. The first semiconductor region is provided on the first electrode. The conductive portion includes a first conductive portion and a second conductive portion separated from each other in a first direction. The first direction is perpendicular to a second direction. The second direction is from the first electrode toward the first semiconductor region. The gate electrode is provided on the conductive portion with a second insulating portion interposed. The gate electrode opposes, with a gate insulating portion interposed, a portion of the first semiconductor region, the second semiconductor region, and the third semiconductor region in the first direction. The second electrode is provided on the second semiconductor region, the third semiconductor region, and the gate electrode.

Abstract: A resist composition including a base material component (A) whose solubility in a developing solution is changed due to the action of an acid, and a compound (D0) formed of an anion moiety and a cation moiety which is represented by Formula (d0), in which the cation moiety of the compound (D0) has a Log P value of less than 7.7. In the formula, Mm+ represents an m-valent organic cation, Rd0 represents a substituent, p represents an integer of 0 to 3, q represents an integer of 0 to 3, n represents an integer of 2 or greater, and a relationship of “n+p?(q×2)+5” is satisfied.

Abstract: A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound (B1) having an anion moiety and a cation moiety and being represented by general formula (b1) (wherein R01 to R014 each independently represents a hydrogen atom or a hydrocarbon group which may have a substituent, or two or more of R01 to R014 may be mutually bonded to form a ring structure, provided that at least two of R01 to R014 are mutually bonded to form a ring structure, and at least one of R01 to R014 has an anion group, and the anion moiety as a whole forms an anion having a valency of n; n represents an integer of 1 or more; represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m).

Abstract: A heat transport device 1 includes a housing 2 with a hollow structure, working fluid 3 sealed in a sealed space of the housing 2, and a porous structure member 4 having a capillary structure disposed in the sealed space, and the housing 2 is configured to be rotatable around a rotation axis P by a motor as a drive source. The housing 2 includes an evaporation part S1 for vaporizing the working fluid 3 by heat from a heating element 5 and a condensation part S2 for condensing vapor to restore it to the working fluid 3, and the evaporation part S1 is provided on an outer side in the radial direction than the condensation part S2 with respect to the rotation axis P.

Abstract: A resist composition including a resin component which exhibits changed solubility in a developing solution under action of acid, the resin component including a structural unit represented by general formula (a0) shown below in which Vax0 represents a single bond or a divalent linking group; Wa represents a divalent aromatic hydrocarbon group which may have a substituent; Ya0 represents a carbon atom; Xa0 represents a group which forms a cyclic hydrocarbon group together with Ya0; Ra00 represents a hydrocarbon group which may have a substituent; provided that at least one of Xa0 and Ra00 has a carbon atom constituting a carbon-carbon unsaturated bond at an ?-position of Ya0.

Abstract: A resist composition including a base component and an acid generator component, the base component including a resin component having a structural unit (a0) represented by general formula (a0) shown below, and the acid generator component containing at least one of a compound (b-1), a compound (b-2) and a compound (b-3) represented by general formula (b-3) shown below in which Wa represents a divalent aromatic hydrocarbon group; Ra00 represents an acid dissociable group; R101, R104 and R106 each independently represents a hydrocarbon group containing an aromatic ring; R105, R107 and R108 each independently represents a cyclic group, a chain alkyl group which may have a substituent or a chain alkenyl group; R102 represents a fluorine atom or a fluorinated alkyl group of 1 to 5 carbon atoms and M?m+ represents an m-valent onium cation.

Abstract: A resist composition containing a compound represented by the general formula (bd1-1), (bd1-2) or (bd1-3); in the formula, Rx1 to Rx4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure; Ry1 to Ry2 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Rz1 to Rz4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rx1 to Rx4, Ry1 to Ry2 and Rz1 to Rz4 has an anion group, M1m+ represents a sulfonium cation having a sulfonyl group, R001 to R003 each independently represent a monovalent organic group; provided that at least one of R001 to R003 is an organic group having an acid dissociable group; and M3m+ represents an m-valent organic cation having an electron-withdrawing group.

Abstract: A resist composition containing a resin component having a structural unit containing a group which is dissociated under the action of an acid and compound represented by the general formula (bd1). In the formula (bd1), Rx1 to Rx4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Ry1 to Ry2 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, and Rz1 to Rz4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure.

Abstract: A resist composition including a compound represented by formula (b1) in which Rb1 represents an aryl group which may have a substituent; Rb2 and Rb3 each independently represents an aryl group which may have a substituent or an alkyl group which may have a substituent; provided that at least one of the aryl group represented by Rb1 and the aryl group or the alkyl group represented by Rb2 or Rb3 has a substituent containing a halogen atom, and at least one of the aryl group represented by Rb1 and the aryl group or the alkyl group represented by Rb2 or Rb3 has a substituent containing a sulfonyl group; and X? represents a counteranion.

Abstract: A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rx1 to Rx4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rx1 to Rx4 may be mutually bonded to form a ring structure; Ry1 and Ry2 represents a hydrogen atom or a hydrocarbon group, or Ry1 and Ry2 may be mutually bonded to form a ring structure; Rz1 to Rz4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rz1 to Rz4 may be mutually bonded to form a ring structure; provided that at least one of Rx1 to Rx4, Ry1, Ry2 and Rz1 to Rz4 has an anionic group; and Mm+ represents an m-valent organic cation).

Abstract: A method for preparing a polymer compound including copolymerizing a monomer (m0-1) and a monomer (m0-2) to obtain a first polymer compound and causing the first polymer compound and an acid component to react with each other to obtain a second polymer compound. In the formulae, R1 and R2 are each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms and a halogenated alkyl group having 1 to 5 carbon atoms, Va01 is a divalent hydrocarbon group which may have an ether bond, na01 is an integer of 0 to 2, Ra10 is a tertiary alkyl ester-type acid dissociable group, Va02 is a divalent linking group containing a heteroatom, or a single bond, Ra07 is a monovalent organic group, na021 is an integer of 0 to 3, Ra20 is an acid dissociable group, and na022 is an integer of 1 to 3.