Patents by Inventor Masatoshi Arai

Masatoshi Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
    Publication number: 20140147788
    Abstract: A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of an acid, the resist composition containing a base material component which exhibits changed solubility in a developing solution by the action of an acid; and the base material component containing a resin component having a constituent unit derived from a compound represented by the following general formula (a0-1), at least two or more kinds of a constituent unit containing an acid dissociable group represented by the following general formula (a1-r-1) or (a1-r-2), and a constituent unit containing a lactone-containing, an —SO2-containing, or a carbonate-containing cyclic group; and a method for forming a resist pattern using the resist composition.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 29, 2014
    Applicant: Tokyo Ohka Kogyo co., Ltd.
    Inventors: Masatoshi Arai, Takahiro Dazai, Yoshiyuki Utsumi
  • POLYMERIZATION METHOD OF HIGH-MOLECULAR WEIGHT COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN
    Publication number: 20140147792
    Abstract: A polymerization method of a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1), which has excellent lithography properties, and is useful as a resist composition, the method including conducting polymerization using a mixed solvent containing 10 mass % or more of one or more of a cyclic ketone-based solvent, an ester-based solvent, and a lactone-based solvent. A resist composition containing the high-molecular weight compound (A1) and a method for forming a resist pattern using the same.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 29, 2014
    Applicant: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Takahiro Dazai, Masatoshi Arai, Yoshiyuki Utsumi
  • Semiconductor device and method for manufacturing same
    Patent number: 8723253
    Abstract: According to one embodiment, the semiconductor device includes a first semiconductor layer. The semiconductor device includes a plurality of base regions, the base regions are provided on a surface of the first semiconductor layer. The semiconductor device includes a source region selectively provided on each of surfaces of the base regions. The semiconductor device includes a gate electrode provided via a gate insulating film in each of a pair of trenches, each of the trenches penetrate the base regions from a surface of the source region to the first semiconductor layer. The semiconductor device includes a field plate electrode provided via a field plate insulating film in each of the pair of trenches under the gate electrode. A thickness of a part of the field plate insulating film is greater than a thickness of the gate insulating film.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: May 13, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsuyoshi Ohta, Masatoshi Arai, Miwako Suzuki
  • Resist composition, and method of forming resist pattern
    Patent number: 8658343
    Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In formula (a5-1), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group, X represents single bond or divalent linking group, W represents a cyclic alkylene group which may include an oxygen atom at arbitrary position, each of Ra and Rb independently represents a hydrogen atom or an alkyl group which may include an oxygen atom at arbitrary position, or alternatively, Ra and Rb may be bonded to each other to form a ring together with the nitrogen atom in the formula, and p represents integer of 1 to 3.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: February 25, 2014
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Masatoshi Arai, Junichi Tsuchiya, Daiju Shiono, Tomoyuki Hirano, Daichi Takaki
  • METHOD OF PRODUCING AMMONIUM SALT COMPOUND, METHOD OF PRODUCING COMPOUND, AND COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    Publication number: 20140017617
    Abstract: A method of producing an ammonium salt compound, including reacting a first ammonium salt compound containing a first ammonium cation which is a primary, secondary or tertiary ammonium cation with a nitrogen-containing compound having a lone pair to obtain a second ammonium salt compound which contains a conjugated acid of the nitrogen-containing compound, the conjugated acid of the nitrogen-containing compound having a larger pKa than the pKa of the first ammonium cation; and a method of producing a compound, including a step of salt exchange between the ammonium salt compound obtained by the aforementioned production method and a sulfonium cation or iodonium cation which has a higher hydrophobicity than the hydrophobicity of the conjugated acid of the nitrogen-containing compound.
    Type: Application
    Filed: July 8, 2013
    Publication date: January 16, 2014
    Inventors: Masatoshi Arai, Yoshiyuki Utsumi
  • Semiconductor device
    Patent number: 8629526
    Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type and a first electrode. The second regions are provided separately on a first major surface side of the first layer. The third region is provided on the first major surface side of the first layer so as to surround the second regions. The first electrode is provided on the first layer and the second regions. The first layer has a first portion and a second portion. The second portion has a lower resistivity than the first portion. The second portion is provided between the second regions and between the first portion and the first major surface and is provided outside the third region and between the first portion and the first major surface.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: January 14, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsuyoshi Ohta, Masatoshi Arai, Miwako Suzuki
  • RECTIFIER CIRCUIT
    Publication number: 20130341641
    Abstract: A rectifier circuit has a rectifier element and a unipolar field-effect transistor connected in series between a first terminal and a second terminal. The rectifier element comprises a first electrode and a second electrode disposed in a direction of a forward current flowing from the first terminal to the second terminal. The field-effect transistor has a gate electrode having a potential identical to a potential at the first electrode, and a source electrode and a drain electrode connected in series to the rectifier element and passing a current depending on the potential at the gate electrode. A breakdown voltage between the gate electrode and drain electrode of the field-effect transistor in a reverse bias mode, where a potential at the second terminal is higher than a potential at the first terminal, being set higher than a breakdown voltage of the rectifier element.
    Type: Application
    Filed: February 28, 2013
    Publication date: December 26, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tatsuya NISHIWAKI, Akira YOSHIOKA, Yasunobu SAITO, Masatoshi ARAI
  • RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND AND METHOD OF PRODUCING POLYMERIC COMPOUND
    Publication number: 20130316285
    Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in an alkali developing solution under action of acid, the resist composition including a polymeric compound containing a base decomposable group in a main chain thereof.
    Type: Application
    Filed: May 21, 2013
    Publication date: November 28, 2013
    Applicant: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Daichi Takaki, Yoshiyuki Utsumi, Masatoshi Arai
  • RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND AND COMPOUND
    Publication number: 20130309614
    Abstract: There is provided a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, including a base component (A) which exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0) shown below. In the formula, A? represents an oxygen atom, a sulfur atom or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom; R1 represents a lactone-containing cyclic group, an —SO2— containing cyclic group or a carbonate-containing cyclic group; and W2 represents a group which is formed by polymerization reaction of a group containing a polymerizable group.
    Type: Application
    Filed: May 15, 2013
    Publication date: November 21, 2013
    Applicant: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yoshiyuki Utsumi, Masatoshi Arai, Takahiro Dazai, Yoshitaka Komuro
  • Image sensor, semiconductor device and image sensing method
    Patent number: 8576319
    Abstract: An image sensor and an image sensing method can obtain image signals with a high S/N ratio in a high-speed image pickup operation. Signal charges are input to input transfer stage 31 of CCD memory 30. Final transfer stage 32 is formed so as to be connected to the input transfer stage 31 and able to transfer signal charges to the input transfer stage 31. In an accumulation mode, read gate 42 and drain gate 40 are not turned on and the next transfer operation of the CCD memory 30 is conducted. The accumulated signal charges are transferred on a stage by stage basis and the signal charges obtained at the first image pickup timing are transferred again straightly to the input transfer stage 31. In this state, the signal charges obtained newly at photoelectric conversion section 20 at the next image pickup timing are injected into the input transfer stage 31 by way of input gate 21.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: November 5, 2013
    Assignees: Japan Atomic Energy Agency, Kinki University
    Inventors: Masatoshi Kureta, Masatoshi Arai, Takeharu Etoh, Konoe Etoh, Toshiaki Akino
  • Schottky barrier diode and MOSFET semiconductor device
    Patent number: 8552476
    Abstract: A semiconductor layer has a second impurity concentration. First trenches are formed in the semiconductor layer to extend downward from an upper surface of the semiconductor layer. Each of insulation layers is formed along each of the inner walls of the first trenches. Each of conductive layers is formed to bury each of the first trenches via each of the insulation layers, and extends downward from the upper surface of the semiconductor layer to a first position. A first semiconductor diffusion layer reaches a second position from the upper surface of the semiconductor layer, is positioned between the first trenches, and has a third impurity concentration lower than the second impurity concentration. A length from the upper surface of the semiconductor layer to the second position is equal to or less than half a length from the upper surface of the semiconductor layer to the first position.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: October 8, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsuyoshi Ohta, Masatoshi Arai, Miwako Suzuki
  • METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    Publication number: 20130260319
    Abstract: A method of producing a polymeric compound having a structural unit that is decomposed and generates acid upon exposure, including reacting a first precursor polymer having a first ammonium cation with an amine whose conjugate acid has an acid dissociation constant (pKa) larger than that of the first ammonium cation to obtain a second precursor polymer having a second ammonium cation that is a conjugate acid of the amine; and performing a salt-exchange between the second precursor polymer and a sulfonium cation or an iodonium cation, in which the second ammonium cation is less hydrophobic than the first ammonium cation, and also less hydrophobic than the sulfonium cation or the iodonium cation.
    Type: Application
    Filed: March 27, 2013
    Publication date: October 3, 2013
    Inventors: Masatoshi Arai, Yoshiyuki Utsumi
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    Publication number: 20130248995
    Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type, a base layer of a second conductivity type placed above the first semiconductor layer, a second semiconductor layer of the first conductivity type placed above the base layer, multiple gate electrodes having upper end is positioned above the upper surface of the base layer, a lower end positioned below the bottom of the base layer, and contacting the first semiconductor layer, the second semiconductor layer, and the base layer through a gate insulating film, insulating component arranged above the gate electrode in which the upper surface is positioned below the upper surface of the second semiconductor layer, and a conductive layer covering the second semiconductor layer from the upper end to the bottom end.
    Type: Application
    Filed: September 7, 2012
    Publication date: September 26, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tatsuya NISHIWAKI, Tsuyoshi Ota, Norio Yasuhara, Masatoshi Arai, Takahiro Kawano
  • FLAT CABLE COVERING AND FLAT CABLE COMPRISING THE SAME
    Publication number: 20130206451
    Abstract: There is provided a flat cable covering that possesses superior flame retardance, heat resistance, durability, blocking resistance, processability and other properties and, at the same time, is eco-friendly without use of halogen-based flame retardants and antimony-based flame retarding assistants. The flat cable covering includes a base film; and an anchor coat layer and a heat seal layer stacked in that order on the base film, wherein the heat seal layer comprises a resin composition including at least 70 to 30% by weight of a filler component composed mainly of a flame retardant and 30 to 70% by weight of a resin component composed mainly of a polyester-based resin, and the flame retardant is a non-halogen-based flame retardant including a metal salt of phosphinic acid and contained in an amount of 5 to 40% by weight based on the whole resin composition.
    Type: Application
    Filed: August 8, 2011
    Publication date: August 15, 2013
    Applicant: DAI NIPPON PRINTING CO., LTD.
    Inventor: Masatoshi Arai
  • Semiconductor device and method for manufacturing same
    Patent number: 8502305
    Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: August 6, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsuyoshi Ohta, Tatsuya Nishiwaki, Norio Yasuhara, Masatoshi Arai, Takahiro Kawano
  • Positive resist composition, method of forming resist pattern and polymeric compound
    Patent number: 8440385
    Abstract: A positive resist composition including a base component (A?) which exhibits increased solubility in an alkali developing solution under the action of acid and generates acid upon exposure, the base component (A?) including a resin component (A1) having a structural unit (a0-1) represented by general formula (a0-1), a structural unit (a0-2) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group (wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof).
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: May 14, 2013
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Tomoyuki Hirano, Daiju Shiono, Masatoshi Arai
  • SEMICONDUCTOR DEVICE
    Publication number: 20130069151
    Abstract: According to one embodiment, a semiconductor device includes: a substrate; a first conductive portion extending in a first direction perpendicular to a major surface of the substrate; a second conductive portion extending in the first direction; a semiconductor portion provided between the first and the second conductive portions and including a first semiconductor region; a first electrode portion extending in the first direction between the first and the second conductive portions; a second electrode portion extending in the first direction between the first and the second conductive portions; a first insulting portion provided between the first electrode portion and the semiconductor portion and having a first thickness; and a second insulating portion provided between the second electrode portion and the semiconductor portion and having a second thickness greater than the first thickness.
    Type: Application
    Filed: March 19, 2012
    Publication date: March 21, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: TSUYOSHI OHTA, SHINICHIRO MISU, MASATOSHI ARAI
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    Publication number: 20130069147
    Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.
    Type: Application
    Filed: March 15, 2012
    Publication date: March 21, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tsuyoshi OHTA, Tatsuya NISHIWAKI, Norio YASUHARA, Masatoshi ARAI, Takahiro KAWANO
  • METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN
    Publication number: 20120328993
    Abstract: A method of producing a polymeric compound containing a structural unit that decomposes upon exposure to generate an acid, the method including: synthesizing a precursor polymer by polymerizing a water-soluble monomer having an anionic group, washing the precursor polymer with water, and subsequently subjecting the precursor polymer to a salt exchange with an organic cation. Also, a polymeric compound produced using the method of producing a polymeric compound, and a method of forming a resist pattern using the resist composition.
    Type: Application
    Filed: June 8, 2012
    Publication date: December 27, 2012
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yoshiyuki Utsumi, Takahiro Dazai, Masatoshi Arai, Takaaki Kaiho
  • RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND
    Publication number: 20120282551
    Abstract: A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R0-1 represents a single bond or a divalent linking group, each of R2, R3 and R4 independently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or R3 and R4 may be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.
    Type: Application
    Filed: February 22, 2012
    Publication date: November 8, 2012
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Kensuke MATSUZAWA, Jun IWASHITA, Yoshitaka KOMURO, Masatoshi ARAI