Abstract: The method according to the present invention is a method for purifying a compound represented by a specific formula (1) or a resin having a structure represented by a specific formula (2), the method including a step of bringing a solution (A) including an organic solvent optionally immiscible with water, and the compound or the resin into contact with an acidic aqueous solution.

Abstract: The allyl compound of the present invention is represented by general formula (?): wherein ring Z1 is a naphthalene ring, ring Z2 is a benzene ring or a naphthalene ring, X is a hydrogen atom or a monovalent substituent having 1 to 18 carbon atoms, R is each independently an alkyl group having 1 to 4 carbon atoms or a halogen atom, m is 1 or 2, n is each independently an integer of 0 to 5, and when m is 1, the ring Z1 and the ring Z2 are bonded to each other via an oxygen atom.

Abstract: A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

Abstract: A resist composition of the present invention is a resist composition containing a resist base material and a solvent. The resist base material contains a specific stereoisomer. A content of the specific stereoisomer in the resist base material is 50 to 100% by mass.

Abstract: A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

Abstract: The resist composition according to the present invention is a resist composition comprising a solid component comprising a resist base material, and a solvent. In the resist composition according to the present invention, the resist composition contains 1 to 80% by mass of the solid component and 20 to 99% by mass of the solvent, the resist base material comprises a compound (ctt form) represented by a predetermined formula (1) and a compound represented by a predetermined formula (3), the proportion of the compound (ctt form) represented by the predetermined formula (1) to the resist base material is from 65 to 99% by mass, and the mass ratio of the compound represented by the predetermined formula (3) to the compound (ctt form) represented by the predetermined formula (1) is from 0.01 to 0.53.

Abstract: Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

Abstract: The object is to provide a compound having high dissolvability in a safe solvent and high sensitivity, and also capable of obtaining a good resist pattern shape, a radiation-sensitive composition containing the same, and a resist pattern formation method using the composition. For this purpose, a compound (B) obtained by reaction between a polyphenol based cyclic compound (A) and a compound (C) having a particular structure, a radiation-sensitive composition containing the same, and a resist pattern formation method using the composition are provided.

Abstract: The present invention provides a resist composition which is excellent in heat resistance, has high solubility in a safe solvent, has high sensitivity, and can impart a good shape to a resist pattern.

Abstract: The material for forming an underlayer film for lithography of the present invention contains a compound represented by the following general formula (1). (in formula (1), each X independently represents an oxygen atom or a sulfur atom, R1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, and each R2 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, provided that at least one R2 represents a hydroxyl group, each m is independently an integer of 1 to 4, n is an integer of 1 to 4, and p is 0 or 1.

Abstract: The material for forming an underlayer film for lithography of the present invention contains a compound having a structure represented by the following general formula (1). (in formula (1), each X independently represents an oxygen atom or a sulfur atom, R1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, R2 represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, m is an integer of 0 to 3, n is an integer of 1 to 4, p is 0 or 1, and q is an integer of 1 to 100.

Abstract: The allyl compound of the present invention is represented by general formula (?): wherein ring Z1 is a naphthalene ring, ring Z2 is a benzene ring or a naphthalene ring, X is a hydrogen atom or a monovalent substituent having 1 to 18 carbon atoms, R is each independently an alkyl group having 1 to 4 carbon atoms or a halogen atom, m is 1 or 2, n is each independently an integer of 0 to 5, and when m is 1, the ring Z1 and the ring Z2 are bonded to each other via an oxygen atom.

Abstract: Provided are a naphthalene formaldehyde resin obtained by reacting a compound (A) represented by formula (1) and formaldehyde (B) in a molar ratio, (A):(B), of 1:1 to 1:20 in the presence of an acidic catalyst, and a deacetalized naphthalene formaldehyde resin and a modified naphthalene formaldehyde resin derived therefrom.

Abstract: An epoxy resin obtained through the following steps (a) to (d): (a): a step of reacting a compound represented by formula (1) and/or (2) with formaldehyde in the presence of a catalyst to thereby provide an aromatic hydrocarbon-formaldehyde resin; (b): a step of treating the aromatic hydrocarbon-formaldehyde resin obtained in the step (a) with an acidic catalyst and water to thereby provide an acid-treated resin; (c): a step of treating the acid-treated resin obtained in the step (b) with an acidic catalyst and a compound represented by formula (3) to thereby provide a modified resin; and (d): a step of reacting the modified resin obtained in the step (c) with epihalohydrin to thereby provide an epoxy resin.

Abstract: A cyclic compound of the present invention has a molecular weight of 500 to 5000, and is represented by the following formula (1):

Abstract: A bicyclohexane derivative compound useful in the field of photoresist, the field of intermediate of drugs and pesticides, and the like, and a manufacturing method of the same are provided. A bicyclohexane derivative compound represented by the following general formula (II) is provided. (In formula (II), Y independently represents an alkyl group of 1 to 10 carbons, a halogen atom, an acyloxy group, an alkoxycarbonyl group or a hydroxyl group, X1 represents a halogen atom, m represents an integer of 0 to 11, and m represents an integer of 0 to 10.).

Abstract: A cyclic compound having a molecular weight of 500 to 5000 is represented by the following formula (1), wherein at least one of R0 is a monovalent group containing an iodine atom. Also disclosed are a method for producing the cyclic compound, a composition containing the cyclic compound, and a method for forming a resist pattern using the composition.

Abstract: There is provided a novel phenolic resin which can be used as a coating agent or a resist resin for a semiconductor, which has a high carbon concentration and a low oxygen concentration in the resin, which has a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process. There are also provided a material useful for forming a novel photoresist underlayer film which has a relatively high solvent solubility, which can be applied to a wet process, and which is excellent in etching resistance as an underlayer film for a multilayer resist, an underlayer film formed using the same, and a pattern forming method using the same. A resin of the present invention is obtained by reacting a compound having a specified structure and an aldehyde having a specified structure in the presence of an acidic catalyst. In addition, a material for forming an underlayer film for lithography of the present invention includes at least the resin and an organic solvent.

Abstract: Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

Abstract: Disclosed are: a cyclic compound which has high solubility in a safe solvent, is highly sensitive, enables the formation of a resist pattern having a good shape, and rarely causes resist pattern collapse; a process for producing the cyclic compound; a radiation-sensitive composition containing the cyclic compound; and a resist pattern formation method using the composition. Specifically disclosed are: a cyclic compound having a specific structure; a process for producing the cyclic compound; a radiation-sensitive composition containing the compound; and a resist pattern formation method using the composition.