Abstract: A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

Abstract: The present invention provides a material for forming an underlayer film for lithography, including a cyanic acid ester compound obtained by cyanation of a modified naphthalene formaldehyde resin.

Abstract: A radiation-sensitive composition containing a resist compound having a high sensitivity, a high resolution, a high etching resistance, and a low outgas which forms a resist pattern with a good shape is described.

Abstract: A compound represented by the following formula (1). (in formula (1), each R1 independently represents a divalent group having 1 to 30 carbon atoms, each of R2 to R7 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a thiol group or a hydroxyl group, in which at least one R5 represents a hydroxyl group or a thiol group, each of m2, m3 and m6 is independently an integer of 0 to 9, each of m4 and m7 is independently an integer of 0 to 8, m5 is an integer of 1 to 9, n is an integer of 1 to 4, and each of p2 to p7 is independently an integer of 0 to 2.

Abstract: A compound represented by the following formula (1). (in formula (1), R1 represents a 2n-valent group having 1 to 30 carbon atoms, R2 to R5 each independently represent an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group or a hydroxyl group, provided that at least one R4 and/or at least one R5 represents an alkoxy group having 1 to 30 carbon atoms, m2 and m3 are each independently an integer of 0 to 8, m4 and m5 are each independently an integer of 0 to 9, provided that m4 and m5 are not 0 at the same time, n is an integer of 1 to 4, and p2 to p5 are each independently an integer of 0 to 2.

Abstract: A compound represented by the following formula (1): wherein each X independently represents an oxygen atom or a sulfur atom, or non-crosslinking, R1 represents a single bond or a 2n-valent group having 1 to 30 carbon atoms, the group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aryl group having 6 to 30 carbon atoms, each R2 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, an aryloxy group having 6 to 30 carbon atoms, or a hydroxyl group, in which at least one R2 represents an alkoxy group having 1 to 30 carbon atoms or an aryloxy group having 6 to 30 carbon atoms, each m is independently an integer of 1 to 6, each p is independently 0 or 1, and n is an integer of 1 to 4.

Abstract: The material for forming an underlayer film for lithography of the present invention contains a compound represented by the following general formula (1). (in formula (1), each X independently represents an oxygen atom or a sulfur atom, R1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, and each R2 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, provided that at least one R2 represents a hydroxyl group, each m is independently an integer of 1 to 4, n is an integer of 1 to 4, and p is 0 or 1.

Abstract: The material for forming an underlayer film for lithography of the present invention contains a compound having a structure represented by the following general formula (1). (in formula (1), each X independently represents an oxygen atom or a sulfur atom, R1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, R2 represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, m is an integer of 0 to 3, n is an integer of 1 to 4, p is 0 or 1, and q is an integer of 1 to 100.).

Abstract: The resist composition according to the present invention is a resist composition comprising a solid component comprising a resist base material, and a solvent. In the resist composition according to the present invention, the resist composition contains 1 to 80% by mass of the solid component and 20 to 99% by mass of the solvent, the resist base material comprises a compound (ctt form) represented by a predetermined formula (1) and a compound represented by a predetermined formula (3), the proportion of the compound (ctt form) represented by the predetermined formula (1) to the resist base material is from 65 to 99% by mass, and the mass ratio of the compound represented by the predetermined formula (3) to the compound (ctt form) represented by the predetermined formula (1) is from 0.01 to 0.53.

Abstract: The resist composition according to the present invention is a resist composition comprising a solid component comprising a resist base material, and a solvent. In the resist composition according to the present invention, the resist composition contains 1 to 80% by mass of the solid component and 20 to 99% by mass of the solvent, the resist base material comprises a compound (ctt form) represented by a predetermined formula (1) and a compound represented by a predetermined formula (3), the proportion of the compound (ctt form) represented by the predetermined formula (1) to the resist base material is from 65 to 99% by mass, and the mass ratio of the compound represented by the predetermined formula (3) to the compound (ctt form) represented by the predetermined formula (1) is from 0.01 to 0.53.

Abstract: The composition for forming an underlayer film for lithography according to the present invention contains a compound represented by a specific formula (1) and 20 to 99% by mass of a solvent component (S), in which 27 to 100% by mass of the compound represented by the formula (1) is included in a component (A) other than the solvent component (S).

Abstract: A resist composition containing a compound represented by the general formulas (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, an alcoholic compound that can be derived therefrom, and a method for producing an alcoholic compound represented by general formulas (6) or (7) are described.

Abstract: The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.

Abstract: The resist material according to the present invention contains a compound represented by the following formula (1): wherein each R0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

Abstract: A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

Abstract: The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

Abstract: The resist composition according to the present invention contains a compound represented by a specific formula. The compound has high heat resistance attributed to its highly aromatic skeleton, in spite of its low molecular weight, and may be used even under high temperature baking conditions. By virtue of the above configuration, the resist composition according to the present invention is excellent in heat resistance, has high solubility in a safe solvent, has high sensitivity, and can impart a good shape to a resist pattern. That is, the resist composition according to the present invention is useful as an acid amplification type non-polymer based resist material.

Abstract: A polymer compound including a unit structure represented by the general formula (1): wherein m1 and m2 each equal 1 to 8, n1 and n2 each equal 0 to 7, m1+n1 and m2+n2 each equal 4 to 8, y represents 0 to 2, R1 represents a hydroxy group; a substituted or unsubstituted straight, branched or cyclic alkyl group; a substituted or unsubstituted aryl group, or a halogen atom, R3 represents a hydrogen atom, a substituted or unsubstituted straight, branched or cyclic alkyl group, or a substituted or unsubstituted aryl group, R2 represents any structure represented by general formula (2) in the specification, at least one R2 has an acid-dissociable site, R5 represents a hydroxy group, —O—R2—O—* or —O—R2—O—R55, and R6 represents a hydroxy group or —O—R2—O—*.

Abstract: A polymer compound including a unit structure represented by the following general formula (1): wherein m1 equals 1 to 8, n1 equals 0 to 7, m1+n1 equals 4 to 8, m2 equals 1 to 8, n2 equals 0 to 7, m2+n2 equals 4 to 8, m1 equals m2, y represents 0 to 2, R1 represents a hydroxy group, a substituted or unsubstituted straight, branched or cyclic alkyl group, a substituted or unsubstituted aryl group, or a halogen atom, R3 represents a hydrogen atom, a substituted or unsubstituted straight, branched or cyclic alkyl group, or a substituted or unsubstituted aryl group, each R2 independently represents any structure represented by general formula (2) in the specification, at least one R2 has an acid-dissociable site, and R5 represents a hydroxy group or —O—R2—O—*.

Abstract: A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.