Abstract: Provided are a novel resin and a precursor thereof that are excellent in thermal decomposability and solubility in a solvent. The resin is obtained by subjecting, to an acidic treatment, a monoalkylnaphthalene formaldehyde resin that is obtained by reacting a compound represented by the following formula (1), wherein R1 represents an alkyl group having 1 to 4 carbon atoms, and formaldehyde in the presence of a catalyst.

Abstract: A radiation-sensitive composition containing a resist compound having a high sensitivity, a high resolution, a high etching resistance, and a low outgas which forms a resist pattern with a good shape is described.

Abstract: Provided are a naphthalene formaldehyde resin obtained by reacting a compound (A) represented by formula (1) and formaldehyde (B) in a molar ratio, (A):(B), of 1:1 to 1:20 in the presence of an acidic catalyst, and a deacetalized naphthalene formaldehyde resin and a modified naphthalene formaldehyde resin derived therefrom.

Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Abstract: A cyclic compound of the present invention has a molecular weight of 500 to 5000, and is represented by the following formula (1):

Abstract: A cyclic compound of the present invention has a molecular weight of 500 to 5000, and is represented by the following formula (1):

Abstract: A cyclic compound having a molecular weight of 500 to 5000 is represented by the following formula (1), wherein at least one of R0 is a monovalent group containing an iodine atom. Also disclosed are a method for producing the cyclic compound, a composition containing the cyclic compound, and a method for forming a resist pattern using the composition.

Abstract: A radiation-sensitive composition containing a resist compound having a high sensitivity, a high resolution, a high etching resistance, and a low outgas which forms a resist pattern with good shape and a method of forming a resist pattern and novel compositions for forming a photoresist under coat film which is excellent in optical properties and etching resistance and contains substantially no sublimable substance and an under coat film formed by the composition. Radiation-sensitive composition containing a solvent and a cyclic compound having, e.g., a cyclic compound (A) having a molecular weight of 700 to 5000 which is synthesized by the condensation reaction of a compound having 2 to 59 carbon atoms and 1 to 4 formyl groups with a compound having 6 to 15 carbon atoms and 1 to 3 phenolic hydroxyl groups, and a cyclic compound for use in the radiation-sensitive composition.

Abstract: This invention addresses problems to provide a cyclic compound having a high solubility in safety solvents and a high sensitivity and being good in the shape of the resulting resist pattern, a method of producing the same, a radiation sensitive composition comprising the same, and a method of forming a resist pattern using the radiation sensitive composition. As means for solving the problem, there are provided a cyclic compound having a specific structure, a radiation sensitive composition comprising the compound, and a method of forming a resist pattern using the composition.

Abstract: A resin having a fluorene structure, a relatively high carbon concentration in the resin, a relatively high heat resistance and a relatively high solvent solubility has a structure represented by wherein each of R3 and R4 independently denotes a benzene ring or a naphthalene ring, a carbon atom at the bridgehead of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom of each of other aromatic rings, and a carbon atom of each of aromatic rings of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom at the bridgehead of other fluorene backbone or (di)benzofluorene backbone. The resin can be applied to a wet process. Methods for producing the resin, for forming an underlayer film useful for forming a novel resist, and for pattern forming using the material, and an underlayer film excellent in heat resistance and etching resistance for multilayer resist are described.

Abstract: A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

Abstract: A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.

Abstract: There is provided a novel phenolic resin which can be used as a coating agent or a resist resin for a semiconductor, which has a high carbon concentration and a low oxygen concentration in the resin, which has a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process. There are also provided a material useful for forming a novel photoresist underlayer film which has a relatively high solvent solubility, which can be applied to a wet process, and which is excellent in etching resistance as an underlayer film for a multilayer resist, an underlayer film formed using the same, and a pattern forming method using the same. A resin of the present invention is obtained by reacting a compound having a specified structure and an aldehyde having a specified structure in the presence of an acidic catalyst. In addition, a material for forming an underlayer film for lithography of the present invention includes at least the resin and an organic solvent.

Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Abstract: Provided is an aromatic hydrocarbon resin with a high carbon concentration and a low oxygen concentration that can be used as a coating agent or a resist resin for semiconductors, as well as a composition for forming an underlayer film for photolithography with excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed from the composition, and a method for forming a pattern using the underlayer film. An aromatic hydrocarbon, an aromatic aldehyde, and a phenol derivative are reacted in the presence of an acidic catalyst to yield an aromatic hydrocarbon resin with a high carbon concentration of 90 to 99.9 mass % and a solubility in propylene glycol monomethyl ether acetate of 10 mass % or more.

Abstract: Provided is an aromatic hydrocarbon resin with a high carbon concentration and a low oxygen concentration that can be used as a coating agent or a resist resin for semiconductors, as well as a composition for forming an underlayer film for photolithography with excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed from the composition, and a method for forming a pattern using the underlayer film. An aromatic hydrocarbon, an aromatic aldehyde, and a phenol derivative are reacted in the presence of an acidic catalyst to yield an aromatic hydrocarbon resin with a high carbon concentration of 90 to 99.9 mass % and a solubility in propylene glycol monomethyl ether acetate of 10 mass % or more.

Abstract: An industrially advantageous purification method for a cyclic compound with a particular structure is provided. A purification method for a cyclic compound, including a step of contacting a solution containing a cyclic compound with a particular structure and an organic solvent with water or an acidic aqueous solution.

Abstract: The object is to provide a compound having high dissolvability in a safe solvent and high sensitivity, and also capable of obtaining a good resist pattern shape, a radiation-sensitive composition containing the same, and a resist pattern formation method using the composition. For this purpose, a compound (B) obtained by reaction between a polyphenol based cyclic compound (A) and a compound (C) having a particular structure, a radiation-sensitive composition containing the same, and a resist pattern formation method using the composition are provided.

Abstract: A bicyclohexane derivative compound useful in the field of photoresist, the field of intermediate of drugs and pesticides, and the like, and a manufacturing method of the same are provided. A bicyclohexane derivative compound represented by the following general formula (II) is provided. (In formula (II), Y independently represents an alkyl group of 1 to 10 carbons, a halogen atom, an acyloxy group, an alkoxycarbonyl group or a hydroxyl group, X1 represents a halogen atom, m represents an integer of 0 to 11, and m represents an integer of 0 to 10.