Abstract: A ferroelectric memory device includes: a capacitor having an upper electrode, a ferroelectric film, and a lower electrode; a conductive plug disposed under the lower electrode for electrically connecting the lower electrode to a selection transistor; and a diffusion barrier film formed between the conductive plug and the lower electrode for preventing a diffusion reaction between the conductive plug and the lower electrode. A silicide layer is formed between the conductive plug and the diffusion barrier film, the silicide layer comprising a first metal element.

Abstract: A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO2 film which are sequentially formed.

Abstract: A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO2 film which are sequentially formed.

Abstract: A control section 20 incorporated in a coating/developing unit 2 is connected to a host computer 4, while a control section 30 incorporated in an exposure unit 3 is connected to the control section 30 of the coating/developing unit 2. Communication with the host computer 4 is performed by the coating/developing unit 2. The control of transfer of a wafer between the coating/developing unit and the exposure unit is executed using a timing signal which is independent of a process instruction output from the host computer 4. The host computer controls the coating/developing unit and the exposure unit using the control section of the coating/developing unit. Supply of instructions to the exposure unit 3 or collection of information therefrom is centrally controlled on the coating/developing unit 2 side.

Abstract: In a method for fabrication a semiconductor memory device which has a capacitor having a lower electrode, a dielectric film and an upper electrode stacked in this order, after the dielectric film is formed to a desired film thickness, the dielectric film is flattened by removing the dielectric film by a specified amount.

Abstract: In a semiconductor storage device in a stack structure wherein a capacitor section having an upper electrode, a dielectric layer, and a lower electrode is connected with a transistor section by a plug, the lower electrode is formed in contact with the plug. The lower electrode is formed of at least an oxide of a platinum-rhodium alloy. In addition to the oxide of a platinum-rhodium alloy, platinum and/or a platinum-rhodium alloy can be used as materials for forming the lower electrode. The plug is formed of polysilicon or tungsten. When the plug is formed of polysilicon, the lower electrode is formed by sequentially laminating, for example, a film of the oxide of the platinum-rhodium alloy, a film of the platinum-rhodium alloy, and a film of the oxide of the platinum-rhodium alloy on the plug.

Abstract: An image recording apparatus includes a discharge head and a discharge control device. The discharge head includes an ink chamber with a discharge hole, a first heater for heating and gasifying ink, a shutter unit, provided at the discharge hole portion, controlled to discharge gasified ink intermittently according to an electrical signal corresponding to image data to be recorded, and a first member for maintaining the temperature of the discharge hole sufficiently lower than the temperature of the first heater in operation of the first heater before initiation and after completion of image data recording. The discharge control device controls the shutter unit.

Abstract: In a semiconductor storage device, a capacitor section is connected with a drain region of a MOS transistor by means of a polysilicon plug. The capacitor section has a lower electrode, a ferroelectric thin film, and an upper electrode stacked in this order. A TiN barrier metal is placed between the lower electrode and the plug. The lower electrode has a lower film made of a platinum-rhodium alloy and an upper film made of a platinum-rhodium alloy oxide which is in contact with the ferroelectric thin film.

Abstract: A second heating device heats an inner wall of an ink chamber of a print head to a temperature not lower than the melting point but not higher than evaporating temperature of ink 3, for a prescribed time period after the end of printing, based on a signal from a second heating control device. Consequently, the ink solidified and deposited on the inner wall of ink chamber and not used for printing is liquefied and recovered to the ink chamber to be used for the next printing.

Abstract: An image printing apparatus for forming an image on a printing medium includes: a printing head including two ink chambers and a shutter; a heater provided under the two ink chambers; a charging electrode provided between the printing medium and the two ink chambers; a back electrode provided on a side of the printing medium which is opposite a side on which the image is formed; a controller associated with the shutter, the heater and the charging electrode.

Abstract: In response to a vertical synchronizing signal generated from a vertical synchronizing signal generator, a microcomputer forms a predetermined image on a print sheet using a printer head on the basis of image data applied from an image memory. The microcomputer controls the rotation of a motor so that the move position of the print sheet is set to a predetermined position with a vertical synchronizing signal as the reference after an edge of the print sheet is detected by a sheet sensor.

Abstract: A superconducting magnetoresistive element has superconducting portions having a high critical current density and weak-coupling portions having a low critical current density. The superconducting portions and weak-coupling portions are alternately arranged and connected in series. The superconducting magnetoresistive element is fabricated, for example, by forming semiconductor films at a plurality of sites on a substrate in a manner that the semiconductor films are spaced from each other, then forming a superconducting thin film all over the substrate and processing the superconducting thin film into a line pattern which passes over the plurality of semiconductor films, and heat-treating the substrate to diffuse a constituent element of the semiconductor films in the superconducting thin film. Portions of the superconducting thin film overlying the semiconductor films become the weak-coupling portions and the rest portions of the superconducting thin film become the superconducting portions.

Abstract: A superconductive magnetoresistor has a substrate, a ceramic superconductive film which is formed on one face of the substrate, ferromagnetic elements for focusing an external magnetic field, and an insulating film. One of the ferromagnetic elements is integrally combined with the other face of the substrate. The other of the ferromagnetic elements is combined with the ceramic superconductive film thorough the insulating film.

Abstract: A copper substrate is immersed into a solution in which a Y-Ba-Cu-O series oxide superconducting fine powder is dispersed into an acetone solution and an electric field is applied thereto. A coating deposited on the copper substrate by electrophoresis is sintered with high temperature in vacuum or in an inert gas atmosphere and then subjected to heat-treatment for oxygen composition ratio in an atmosphere of oxygen or air under 500.degree. C. This method prevents occurrence of a CuO layer, which would conventionally be formed at an interface between a Y-Ba-Cu-O film and a Cu substrate disadvantageously, and moreover enables fabrication of superconducting coatings having satisfactory characteristics.

Abstract: In a method for manufacturing a device having a film of high temperature superconductor, a copper substrate is used in the electrophoretic deposition as a cathode on which fine powders of superconductor should be deposited, and the fine powders deposited on the substrate are fired in the conditions that they are sintered partially.In other methods for manufacturing such a device, a desired minute pattern of electrically conductive material as a cathode in the electrophoretic deposition is formed on a substrate, and a minute pattern of fine powders is deposited according to the pattern of the cathode. Then, the fine powders are fired to form a superconductor film. Such a desired pattern of the cathode is formed by the patterning of a film of an electrically insulating substrate. Such a desired pattern of the cathode is also formed by the patterning of an electrically insulating material, applied to an electrically conductive substrate.

Abstract: A copper substrate is immersed into a solution in which a Y-Ba-Cu-O series oxide superconducting fine powder is dispersed into an acetone solution and an electric field is applied thereto. A coating deposited on the copper substrate by electrophoresis is sintered with high temperature in vacuum or in an inert gas atmosphere and then subjected to heat-treatment for oxygen composition ratio in an atmosphere of oxygen or air under 500.degree. C. This method prevents occurrence of a CuO layer, which would conventionally be formed at an interface between a Y-Ba-Cu-O film and a Cu substrate disadvantageously, and moreover enables fabrication of superconducting coatings having satisfactory characteristics.

Abstract: A superconductive magneto-resistive device includes superconductive ceramic films having a magneto-resistive effect. In the superconductive magneto-resistive device, the superconductive ceramic films are laminated one by one, and the adjacent superconductive ceramic films are insulated by each electrical insulation film, respectively, except for one portion of each of the adjacent superconductive ceramic films, resulting in that the superconductive ceramic films are connected in series. Furthermore, a pair of electrodes is arranged on the upper-most and lower-most superconductive ceramic films.

Abstract: An apparatus for observing a superconductive phenomenon is disclosed. In the apparatus, a cooling unit cools a superconductor having a threshold temperature at which the superconductor changes from the normal conductive phase to the superconductive phase, and a magnetic field is applied thereto. A current is supplied to the superconductor, and there are clearly observed a phenomenon on which an electric resistance thereof becomes zero at a threshold temperature thereof, a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold current to be supplied thereto, and a phenomenon on which the super conductor changes from the normal conductive phase to the superconductive phase at a threshold magnetic field to be applied thereto.

Abstract: An apparatus for observing a superconductive phenomenon is disclosed. In the apparatus, a cooling unit cools a superconductor having a threshold temperature at which the superconductor changes from the normal conductive phase to the superconductive phase, and a magnetic field is applied thereto. A current is supplied to the superconductor, and there are clearly observed a phenomenon on which an electric resistance thereof becomes zero at a threshold temperature thereof, a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold current to be supplied thereto, and a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold magnetic field to be applied thereto.

Abstract: A superconductive magneto-resistive device is made up of superconductive materials having grain boundaries which act as weak couplings. The superconductive material will change from the superconductive state to the normal state when a magnetic field is applied to the material. The superconductive material can be used in various devices for measuring.