Abstract: The present invention provides an image display device which includes a photo-sensing circuit capable of high-speed light signal reading at high S/N ratio and has a touch-panel function with less influence by disturbance light and less wrong recognition. The image display device comprises a display unit in which display pixels having thin-film transistors are arranged in a matrix and a plurality of light detection pixels within the display unit. The image display device is configured in such a way that a first light sensing element that receives observation light and a second light sensing element that does not receive observation light are electrically connected, and that a blue color filter and the first light detection pixel are overlapped and a green or a red color filter and the second light detection pixel are overlapped at a light sensing element that outputs potential modulation at the connection point of the first and second light sensing elements.

Abstract: Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current.

Abstract: An object of the present invention is to provide an image display device that is capable of displaying an image with high brightness and low power. The above object is achieved by controlling, by use of a common switch control line 9, a pair of switching means 7, 8 for alternatively selecting and inputting one of the video signal voltage from a signal line DAT and the pixel driving voltage from a signal line SWP.

Abstract: In a reference voltage generation circuit, a bandgap reference circuit (BGR circuit) 1 includes diode element D1 and D2 having different current densities, three resistive elements R1, R2 and R3, a P-type first transistor Tr1 for supplying a current to a reference voltage output terminal O, a P-type second transistor Tr2 for determining a drain current flowing through the first transistor Tr1 by a current mirror structure, and a feedback type control circuit 11. The BGR circuit 1 is connected to a pull-down circuit 2. The pull-down circuit 2 includes a resistive element R4 and a P-type transistor Tr4 which are connected in series. The resistive element R4 is connected to a drain terminal of the second P-type transistor Tr2. The P-type transistor Tr4 has a gate terminal connected to the reference voltage output terminal O and a grounded drain terminal.

Abstract: A semiconductor IC capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing stable operation.

Abstract: In a signal processing device which performs data compression, a thinning circuit 1 generates thinned data by thinning input PCM data. For example, when a sampling rate fs of the PCM data (original data) is fs=10 Hz, thinned data of fs=1 Hz is generated. The determination circuit 2 controls the selection circuit 4 so that, based on the following expression: TOTAL1=|X(n)?X(n?1)|+|X(n?1)?X(n?2)|+ . . . +|X(n?8)?X(n?9)| if TOTAL1>C1, the input PCM data is selected, and if otherwise the thinned data is selected. The selected data and the determination result information of the determination circuit 2 are written into a memory 3. Therefore, data compression is performed with respect to original data with a simple circuit configuration and without losing required information of the original data.

Abstract: Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current.

Abstract: Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current.

Abstract: Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current.

Abstract: Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation.

Abstract: Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current.

Abstract: Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current.

Abstract: In a semiconductor integrated circuit of the present invention, the main circuit 2 includes MOS transistors in which the source and the substrate are separated from each other. The substrate potential control circuit 1 controls the substrate potential of the MOS transistors of the main circuit 2 so that the actual saturation current value of the MOS transistors of the main circuit 2 is equal to the target saturation current value Ids under the operating power supply voltage Vdd of the main circuit 2. Therefore, it is possible to suppress variations in the operation speed even if the operating power supply voltage of the semiconductor integrated circuit is reduced.

Abstract: A multi-chip module is implemented by connecting a plurality of connection pads provided on, for example, two semiconductor chips via a plurality of conductive connecting members. To carry out a test for determining the quality of the connection between the two semiconductor chips, the multi-chip module is further provided with a plurality of switch elements so that the plurality of connecting members can be electrically conducted in a serial manner via the connection pads of the semiconductor chips. During the connection test, all the switch elements are turned on, and the impedance between both ends of the line including the plurality of connecting members conducted in a serial manner is measured using two probing pads.

Abstract: In a semiconductor integrated circuit, respective semiconductor circuits are disposed in different regions partitioned in accordance with their operation probabilities per unit time, and a supply voltage and a threshold voltage are correlatively controlled in each region. A target value for controlling the threshold voltage is determined in accordance with the operation probability of the semiconductor circuit. A threshold voltage control circuit controls substrate voltages of p-type and n-type MOS transistors included in the semiconductor circuit so that the threshold voltage can be constant at the target value regardless of the temperature change occurring in use. Simultaneously, a supply voltage control circuit controls the supply voltage for the semiconductor circuit so that an objective operating frequency can be attained. As a result, a semiconductor integrated circuit with low power consumption can be obtained.

Abstract: A two-level supply voltage detection circuit includes two power supply detection circuits. One of the power supply detection circuits is provided on the high potential side, and the other is provided on the lower potential side. Each power supply detection circuit outputs a detection signal which is active when the supply voltage is equal to or higher than a reference value. The two-level supply voltage detection circuit outputs an OR logic value of the detection outputs of the power supply detection circuits. Furthermore, the power supply detection circuit on the low voltage side includes a detection operation control circuit. Only when a detection signal output from the power supply detection circuit on the high voltage side is active, the detection operation control circuit turns off the power supply detection circuit on the low voltage side in response to the active detection signal.

Abstract: A large chip includes a first set of branch wires that branch off from a first trunk wire and extend to respective wires so as to be connected to respective bond pads. Each of the branch wires of the first set includes a connection control element and a resistor. A small chip includes a second set of branch wires that branch off from a second trunk wire and extend to respective wires so as to be connected to respective bond pads. Each of the branch wires of the second set includes a connection control element and a resistor. Whether connection is properly made or not between the bond pads is determined by measuring a current value when voltage is applied to first and second test pads.

Abstract: A character string input assistance program of the present invention comprises a step (S01) of receiving an input unconverted character string; a step (S02) of receiving a conversion command for the unconverted character string; a step (S03, S04) of executing display for prompting selection of a plurality of conversion candidate databases constituted by pre-storing conversion candidate character strings in accordance with the conversion command; a step (S05) of receiving a command for selecting a conversion candidate database; a step (S07) of referring to the conversion candidate database selected in accordance with the command for selecting the conversion candidate database to present a conversion candidate character string included in the conversion candidate database; a step (S08) of receiving a command for selecting a conversion candidate character string; and a step (S09) of supplying the conversion candidate character string selected in accordance with the command for selecting the conversion candidate

Abstract: Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation.

Abstract: A two-level supply voltage detection circuit includes two power supply detection circuits. One of the power supply detection circuits is provided on the high potential side, and the other is provided on the lower potential side. Each power supply detection circuit outputs a detection signal which is active when the supply voltage is equal to or higher than a reference value. The two-level supply voltage detection circuit outputs an OR logic value of the detection outputs of the power supply detection circuits. Furthermore, the power supply detection circuit on the low voltage side includes a detection operation control circuit. Only when a detection signal output from the power supply detection circuit on the high voltage side is active, the detection operation control circuit turns off the power supply detection circuit on the low voltage side in response to the active detection signal.