Abstract: A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.

Abstract: A resist film made of a chemically amplified resist is formed on a substrate. Subsequently, a barrier film for preventing a component of the resist film from eluting into an immersion liquid or preventing the immersion liquid from permeating into the resist film is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.

Abstract: A resist protective coating material is provided comprising an ?-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.

Abstract: After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

Abstract: In a pattern formation method, a resist film is formed on a substrate and a barrier film including a plasticizer is then formed on the resist film. Thereafter, with a liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Subsequently, after the pattern exposure, the resist film is developed after removing the barrier film, so as to form a resist pattern in a good shape without producing residues.

Abstract: A resist film made of a chemically amplified resist is formed on a substrate. Subsequently, a barrier film for preventing a component of the resist film from eluting into an immersion liquid or preventing the immersion liquid from permeating into the resist film is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.

Abstract: A resist film made of a chemically amplified resist material including a polymer; a photo-acid generator and carbamoyl oxime is formed on a substrate. Subsequently, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is baked, and the baked resist film is developed, so as to form a resist pattern made of the resist film.

Abstract: After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

Abstract: In exposing a resist film to light with a liquid provided on a positive chemically amplified resist film, a barrier film material for a barrier film formed between the resist film and the liquid includes a compound having an acid leaving group and a thermal acid generator.

Abstract: After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma.

Abstract: An exposure system includes an exposure section provided within a chamber for irradiating a resist film formed on a wafer with exposing light through a mask with an immersion liquid provided on the resist film. It further includes a drying section for drying the surface of the resist film after the irradiation.

Abstract: A polymer comprising recurring units of formula (1) wherein R1 is F or fluoroalkyl, R2 is alkylene or fluoroalkylene, and R3 is an acid labile group and having a Mw of 1,000-500,000 is used to formulate a resist composition, which is processed by the lithography involving ArF exposure and offers many advantages including resolution, minimal line edge roughness, etch resistance, and minimal surface roughness after etching. The composition performs well when processed by the ArF immersion lithography with liquid interposed between the projection lens and the wafer.

Abstract: An exposure system includes an exposure section provided within a chamber for irradiating a resist film formed on a wafer with exposing light through a mask with an immersion liquid provided on the resist film. It further includes a drying section for drying the surface of the resist film after the irradiation.

Abstract: A resist film made of a resist material including 4-pentanelactam, that is, hetero cyclic ketone, is formed on a substrate, and subsequently, pattern exposure is performed by irradiating the resist film with exposing light through a mask. Then, the resist film having been subjected to the pattern exposure is developed, thereby forming a resist pattern.

Abstract: A resist material includes a polymeric material made of a unit represented by a general formula of the following Chemical Formula; and an acid generator for generating an acid through irradiation with light: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; m?0, n?0, s>0 (whereas excluding m=n=0) and 1?k?3.

Abstract: A resist film made of a chemically amplified resist material including a polymer; a photo-acid generator and carbamoyl oxime is formed on a substrate. Subsequently, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is baked, and the baked resist film is developed, so as to form a resist pattern made of the resist film.

Abstract: There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.

Abstract: A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved.

Abstract: After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part.

Abstract: A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.