Abstract: After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.

Abstract: A resist film is formed on a substrate, and a barrier film including a compound whose alkali-insoluble property is changed to an alkali-soluble property through molecular structure change caused by an alkaline solution is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is performed by selectively irradiating the resist film through the barrier film with exposing light. After the pattern exposure, the barrier film is removed and the resist film is developed. Thus, a resist pattern made of the resist film is formed.

Abstract: After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.

Abstract: A fluorinated polymer comprising recurring units of formulae (1a) to (1d) and having a Mw of 1,000-500,000 is provided. R1 is an acid labile group, R2 is a single bond or methylene, a1, a2, a3, and a4 are numbers from more than 0 to less than 1, and 0<a1+a2+a3+a4?1, b is 1 or 2, and c is 0 or 1.

Abstract: In a pattern formation method, pattern exposure is performed by selectively irradiating, with exposing light, a resist film formed on a substrate and made of a resist including a carboxylic acid derivative. A first resist pattern is formed by developing the resist film after the pattern exposure, and subsequently, the first resist pattern is exposed to a solution including a reducing agent for reducing the carboxylic acid derivate. Thereafter, a water-soluble film including a crosslinking agent for causing crosslinking with a material of the first resist pattern is formed on the first resist pattern having been exposed to the solution. Subsequently, a crosslinking reaction is caused by annealing the water-soluble film between a portion of the water-soluble film and a portion of the first resist pattern in contact with each other on the sidewall of the first resist pattern, and then, a portion of the water-soluble film not reacted with the first resist pattern is removed.

Abstract: A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2: wherein R1, R2, R3, R7, and R8 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R9 is a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group

Abstract: The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and A1 are as defined in claim 1).

Abstract: In the pattern formation method, a resist film is formed on a substrate by using a chemically amplified resist material including fumaric acid substituted by an acid labile group released by an acid; an alkali-soluble polymer soluble in an alkaline solution; and a photo-acid generator for generating an acid through irradiation with light. Subsequently, pattern exposure is carried out by selectively irradiating the resist film with exposing light, and a resist pattern is formed by developing the resist film after the pattern exposure.

Abstract: A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.

Abstract: In the pattern formation method, a resist film is formed on a substrate, and a barrier film is formed on the resist film. Thereafter, with a liquid provided on the barrier film, pattern exposure is performed by selectively irradiating the resist film with exposing light through the barrier film. After the pattern exposure, the barrier film is exposed to a water displacing agent, and then, the resist film having been subjected to the pattern exposure is developed, so as to remove the barrier film and to form a resist pattern made of the resist film.

Abstract: In a pattern formation method, a resist film made of a chemically amplified resist material including a first polymer having hemiacetal or hemiketal is formed on a substrate. Then, with a liquid provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.

Abstract: After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.

Abstract: A resist material includes a polymeric material made of a unit represented by a general formula of the following Chemical Formula; and an acid generator for generating an acid through irradiation with light: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; m?0, n?0, s>0 (whereas excluding m=n=0) and 1?k?3.

Abstract: After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.

Abstract: After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.

Abstract: In a pattern formation method, a resist film including a compound having a lactone ring is formed on a substrate of silicon oxide. Then, pattern exposure is performed by selectively irradiating the resist film with exposing light, and the resist film is developed after the pattern exposure so as to form a resist pattern made of the resist film. Subsequently, the lactone ring included in the resist pattern is opened by exposing the resist pattern to an acrylic acid aqueous solution. Thereafter, with the resist pattern where the lactone ring has been opened used as a mask, the substrate is etched, so as to form a recess in a good shape.

Abstract: A chemically amplified resist composition using an alternating copolymer of ?-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.

Abstract: A semiconductor manufacturing apparatus includes a liquid supplying section for supplying a liquid onto a stage for holding a wafer on which a resist film is formed; an exposing section for irradiating the resist film with exposing light through a mask with the liquid provided on the resist film; and a removing part for removing, from the liquid, a gas included in the liquid. Thus, the liquid from which the gas has been removed is provided on the resist film, and therefore, foams included in the liquid or formed during the exposure can be removed. Accordingly, exposure abnormality such as diffraction abnormality can be prevented, resulting in forming a resist pattern in a good shape.

Abstract: A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.

Abstract: After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.