Patents by Inventor Masayuki Katagiri

Masayuki Katagiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190259659
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.
    Type: Application
    Filed: April 30, 2019
    Publication date: August 22, 2019
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masayuki KITAMURA, Atsuko Sakata, Makoto Wada, Yuichi Yamazaki, Masayuki Katagiri, Akihiro Kajita, Tadashi Sakai, Naoshi Sakuma, Ichiro Mizushima
  • Publication number: 20190259707
    Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.
    Type: Application
    Filed: April 30, 2019
    Publication date: August 22, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hisao MIYAZAKI, Tadashi Sakai, Yasutaka Nishida, Takashi Yoshida, Yuichi Yamazaki, Masayuki Katagiri, Naoshi Sakuma
  • Patent number: 10370325
    Abstract: The present invention provides a novel cyanate ester compound which has excellent solvent solubility and from which a hardened product having a low coefficiency of thermal expansion and excellent flame retardancy and heat resistance is obtained. The present invention is a cyanate ester compound obtained by cyanating a naphthol-dihydroxynaphthalene aralkyl resin or a dihydroxynaphthalene aralkyl resin.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: August 6, 2019
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Masayuki Katagiri, Tatsuya Shima, Keita Tokuzumi
  • Patent number: 10325851
    Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: June 18, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hisao Miyazaki, Tadashi Sakai, Yasutaka Nishida, Takashi Yoshida, Yuichi Yamazaki, Masayuki Katagiri, Naoshi Sakuma
  • Patent number: 10325805
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: June 18, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Kitamura, Atsuko Sakata, Makoto Wada, Yuichi Yamazaki, Masayuki Katagiri, Akihiro Kajita, Tadashi Sakai, Naoshi Sakuma, Ichiro Mizushima
  • Publication number: 20190112410
    Abstract: The present invention provides a novel cyanic acid ester compound that has excellent solvent solubility and provides a cured product having a low rate of thermal expansion and having excellent flame retardance and heat resistance, and a resin composition containing the compound, etc. The present invention provides a resin composition whose cured product obtained by curing can achieve a printed circuit board excellent in peel strength, glass transition temperature, rate of thermal expansion, rate of water absorption, and thermal conductivity. The present invention provides a resin composition whose cured product obtained by curing can achieve a printed circuit board not only having a high glass transition temperature and low thermal expansibility but being also excellent in flexural modulus and thermal conductivity.
    Type: Application
    Filed: March 27, 2017
    Publication date: April 18, 2019
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Shota KOGA, Kentaro TAKANO, Masayuki KATAGIRI, Yoshihiro YASUDA, Tomoo TSUJIMOTO
  • Patent number: 10174149
    Abstract: The present invention provides a cyanic acid ester compound having a structure represented by the following general formula (1): wherein n represents an integer of 1 or larger.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: January 8, 2019
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Takashi Kobayashi, Kentaro Takano, Masayuki Katagiri, Keita Tokuzumi, Tatsuya Shima
  • Patent number: 10160824
    Abstract: The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: December 25, 2018
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Masayuki Katagiri, Go Higashihara, Kenji Arii, Yuuichi Sugano, Makoto Tsubuku
  • Patent number: 10155835
    Abstract: To provide a novel cyanate ester compound that can realize a cured product having low dielectric constant and dielectric loss tangent, and excellent flame retardancy and heat resistance, and moreover has relatively low viscosity, excellent solvent solubility, and also excellent handling properties, and a method for producing the cyanate ester compound, and a curable resin composition and the like using the cyanate ester compound. A phenol-modified xylene formaldehyde resin is cyanated.
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: December 18, 2018
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Yuuichi Sugano, Masayuki Katagiri, Seiji Kita, Daisuke Ohno, Masanobu Sogame
  • Publication number: 20180277487
    Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.
    Type: Application
    Filed: August 30, 2017
    Publication date: September 27, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hisao MIYAZAKI, Tadashi SAKAI, Yasutaka NISHIDA, Takashi YOSHIDA, Yuichi YAMAZAKI, Masayuki KATAGIRI, Naoshi SAKUMA
  • Publication number: 20180269157
    Abstract: A wiring of an embodiment includes: a multilayer graphene including graphene sheets laminated in a first direction, the multilayer graphene extended in a second direction regarded as a longitudinal direction that intersects with the first direction; a first metal part in direct contact with the multilayer graphene; a second metal part spaced apart from the first metal part in the second direction, the second metal part in direct contact with the multilayer graphene; a first conductive part disposed on the multilayer graphene in the first direction, and electrically connected to the multilayer graphene with the first metal part interposed therebetween; and a second conductive part disposed on the multilayer graphene in the first direction, and electrically connected to the multilayer graphene with the second metal part interposed therebetween.
    Type: Application
    Filed: September 1, 2017
    Publication date: September 20, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masayuki KATAGIRI, Tatsuro SAITO, Tadashi SAKAI, Hisao MIYAZAKI
  • Patent number: 9997611
    Abstract: A graphene wiring structure of an embodiment has a multilayered graphene having a plurality of planar graphene sheets laminated, and a first interlayer substance being a metal oxyhalide between the plurality of planar graphene sheets.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: June 12, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hisao Miyazaki, Tadashi Sakai, Masayuki Katagiri, Yuichi Yamazaki
  • Publication number: 20180105488
    Abstract: The present invention provides a novel cyanate ester compound which has excellent solvent solubility and from which a hardened product having a low coefficiency of thermal expansion and excellent flame retardancy and heat resistance is obtained. The present invention is a cyanate ester compound obtained by cyanating a naphthol-dihydroxynaphthalene aralkyl resin or a dihydroxynaphthalene aralkyl resin.
    Type: Application
    Filed: February 19, 2016
    Publication date: April 19, 2018
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Masayuki KATAGIRI, Tatsuya SHIMA, Keita TOKUZUMI
  • Patent number: 9949369
    Abstract: The present invention is a cyanate ester compound represented by the following formula (1): wherein Ar represents an aromatic ring; R1 each independently represents a hydrogen atom, an alkyl group, or an aryl group; n each independently represents an integer of 1 to 3; m+n is the same as the total number of hydrogen atoms in a monovalent aromatic group containing the aromatic ring and the hydrogen atoms; R2 represents a hydrogen atom (excluding a case where Ar represents a benzene ring; n each represents 1; R1 represents a hydrogen atom; m each represents 4, and a cyanate group is bonded to the benzene ring in the 4-position relative to an adamantyl group), or an alkyl group having 1 to 4 carbon atoms; and R3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: April 17, 2018
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Masayuki Katagiri, Keita Tokuzumi, Makoto Tsubuku, Tomoo Tsujimoto, Kenji Arii, Takashi Kobayashi, Masanobu Sogame, Yoshinori Mabuchi, Sotaro Hiramatsu
  • Patent number: 9924593
    Abstract: A graphene wiring structure of an embodiment has a substrate, a metal part on the substrate, multilayered graphene connected to the metal part, a first insulative film on the substrate, and a second insulative film on the substrate. The metal part is present between the first insulative film and the second insulative film. Edges of the multilayered graphene are connected to the metal part. A side face of the first insulative film vertical to the substrate opposes a side face of the second insulative film vertical to the substrate. A first outer face of the multilayered graphene is in physical contact with a first side face of the first insulative film vertical to the substrate. A second outer face of the multilayered graphene is in physical contact with a second side face of the second insulative film vertical to the substrate.
    Type: Grant
    Filed: September 1, 2016
    Date of Patent: March 20, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadashi Sakai, Yuichi Yamazaki, Hisao Miyazaki, Masayuki Katagiri, Taishi Ishikura, Akihiro Kajita
  • Publication number: 20180012846
    Abstract: A graphene structure of an embodiment includes multilayer graphene laminated with graphene sheets, and a first interlayer material being present between the graphene sheets of the multilayer graphene and containing a multimer of molybdenum oxide.
    Type: Application
    Filed: March 1, 2017
    Publication date: January 11, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hisao MIYAZAKI, Takashi YOSHIDA, Masayuki KATAGIRI, Yuichi YAMAZAKI, Tadashi SAKAI
  • Publication number: 20170316973
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.
    Type: Application
    Filed: July 17, 2017
    Publication date: November 2, 2017
    Inventors: Masayuki KITAMURA, Atsuko SAKATA, Makoto WADA, Yuichi YAMAZAKI, Masayuki KATAGIRI, Akihiro KAJITA, Tadashi SAKAI, Naoshi SAKUMA, Ichiro MIZUSHIMA
  • Patent number: 9761530
    Abstract: Graphene wiring of an embodiment has a graphene intercalation compound including a multilayer graphene having graphene sheets stacked therein and an interlayer substance disposed between layers of the multilayer graphene, and an interlayer cross-linked layer connected to a side surface of the multilayer graphene. The interlayer cross-linked layer has a cross-linked molecular structure including multiple bonded molecules cross-linking the graphene sheets included in the multilayer graphene.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: September 12, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hisao Miyazaki, Tadashi Sakai, Yuichi Yamazaki, Masayuki Katagiri
  • Publication number: 20170256499
    Abstract: A graphene wiring structure of an embodiment has a multilayered graphene having a plurality of planar graphene sheets laminated, and a first interlayer substance being a metal oxyhalide between the plurality of planar graphene sheets.
    Type: Application
    Filed: December 27, 2016
    Publication date: September 7, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hisao MIYAZAKI, Tadashi Sakai, Masayuki Katagiri, Yuichi Yamazaki
  • Publication number: 20170229301
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.
    Type: Application
    Filed: September 18, 2012
    Publication date: August 10, 2017
    Inventors: Masayuki KITAMURA, Atsuko SAKATA, Makoto WADA, Yuichi YAMAZAKI, Masayuki KATAGIRI, Akihiro KAJITA, Tadashi SAKAI, Naoshi SAKUMA, Ichiro MIZUSHIMA