Abstract: A method for producing a polypropylene sheet having a thickness of 0.5 to 5 mm, the method comprising; a step 1 of preparing a precursor in which a first biaxially oriented polypropylene film having a thickness of less than 0.15 mm and a melting point Tmh and a second biaxially oriented polypropylene film having a thickness of less than 0.15 mm and a melting point of Tml are alternately laminated; a step 2 of bringing a heating element into contact with an outermost layer of the precursor to thermally seal layer of the films, where Tmh?Tml?8(° C.) where the melting point is measured by a differential scanning calorimeter (DSC) under the condition at 30° C. to 230° C. and a heating rate of 10° C./min.

Abstract: A resist composition includes: (A) a resin; and (B) a solvent containing: (B1) a compound represented by the following general formula (b-1), wherein the content of the active component is 45% by mass or less based on the total amount of the resist composition: wherein R1 is an alkyl group having 1 to 10 carbon atoms.

Abstract: A resist auxiliary film composition includes: (A) a resin; and (B) a solvent containing: (B1) a compound represented by the following general formula (b-1), wherein the content of the active component is 45% by mass or less based on the total amount of the resist auxiliary film composition: wherein R1 is an alkyl group having 1 to 10 carbon atoms.

Abstract: A thinner composition includes: (B) a solvent containing: (B1) a compound represented by the following general formula (b-1): wherein R1 is an alkyl group having 1 to 10 carbon atoms. A method for manufacturing a semiconductor device includes applying the thinner composition to a substrate, before applying a photoresist film material or a photoresist underlayer film material to the substrate.

Abstract: Provided is a resin composition comprises a cyanate ester compound (A), an amine adduct compound (B) and a borate ester (C).

Abstract: Provided is a resist composition which contains a resin (A) and a solvent (B) that contains a compound (B1) represented by general formula (b-1), wherein the content of the active ingredients based on the total amount of the resist composition is 45% by mass or less. (In formula (b-1), R1 represents an alkyl group having from 1 to 10 carbon atoms.

Abstract: A solar cell assembly includes a plurality of solar cells and an inter-cell region provided between adjacent ones of the solar cells included in the plurality of solar cells. Each of the solar cells and the inter-cell region includes: a semiconductor substrate having a first conductivity type and having a first main surface and a second main surface that face away from each other; a first amorphous semiconductor layer having a second conductivity type and being provided on a first main surface side of the semiconductor substrate; an insulating layer provided on part of the first amorphous semiconductor layer; and a first transparent conductive film provided on the first amorphous semiconductor layer so as to cover the insulating layer. In a plan view of the solar cell assembly, the insulating layer is provided along the inter-cell region and partially overlapping the inter-cell region.

Abstract: A solar cell assembly includes a plurality of solar cells and an inter-cell region provided between adjacent ones of the solar cells included in the plurality of solar cells. Each of the solar cells and the inter-cell region includes: a semiconductor substrate having a first conductivity type and having a first main surface and a second main surface that face away from each other; a first amorphous semiconductor layer having a second conductivity type and being provided on a first main surface side of the semiconductor substrate; an insulating layer provided on part of the first amorphous semiconductor layer; and a first transparent conductive film provided on the first amorphous semiconductor layer so as to cover the insulating layer. In a plan view of the solar cell assembly, the insulating layer is provided along the inter-cell region and partially overlapping the inter-cell region.

Abstract: The present invention provides a novel cyanic acid ester compound that has excellent solvent solubility and provides a cured product having a low rate of thermal expansion and having excellent flame retardance and heat resistance, and a resin composition containing the compound, etc. The present invention provides a resin composition whose cured product obtained by curing can achieve a printed circuit board excellent in peel strength, glass transition temperature, rate of thermal expansion, rate of water absorption, and thermal conductivity. The present invention provides a resin composition whose cured product obtained by curing can achieve a printed circuit board not only having a high glass transition temperature and low thermal expansibility but being also excellent in flexural modulus and thermal conductivity.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: The present invention provides a novel cyanate ester compound which has excellent solvent solubility and from which a hardened product having a low coefficiency of thermal expansion and excellent flame retardancy and heat resistance is obtained. The present invention is a cyanate ester compound obtained by cyanating a naphthol-dihydroxynaphthalene aralkyl resin or a dihydroxynaphthalene aralkyl resin.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: The present invention provides a novel cyanic acid ester compound that has excellent solvent solubility and provides a cured product having a low rate of thermal expansion and having excellent flame retardance and heat resistance, and a resin composition containing the compound, etc. The present invention provides a resin composition whose cured product obtained by curing can achieve a printed circuit board excellent in peel strength, glass transition temperature, rate of thermal expansion, rate of water absorption, and thermal conductivity. The present invention provides a resin composition whose cured product obtained by curing can achieve a printed circuit board not only having a high glass transition temperature and low thermal expansibility but being also excellent in flexural modulus and thermal conductivity.

Abstract: The present invention provides a cyanic acid ester compound having a structure represented by the following general formula (1): wherein n represents an integer of 1 or larger.

Abstract: The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.

Abstract: To provide a novel cyanate ester compound that can realize a cured product having low dielectric constant and dielectric loss tangent, and excellent flame retardancy and heat resistance, and moreover has relatively low viscosity, excellent solvent solubility, and also excellent handling properties, and a method for producing the cyanate ester compound, and a curable resin composition and the like using the cyanate ester compound. A phenol-modified xylene formaldehyde resin is cyanated.