Abstract: A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.

Abstract: A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer.

Abstract: The cyanate ester compound of the present invention is obtained by cyanating a modified naphthalene formaldehyde resin.

Abstract: A carbon nanotube interconnect structure of an embodiment has a first interconnect layer, a first interlayer insulating film on the first interconnect layer, a second interlayer insulating film on the first interlayer insulating film, a contact hole penetrating through the first interlayer insulating film and the second interlayer insulating film, a catalyst metal film on a portion of the first interconnect layer located at a lower end of the contact hole, a second interconnect layer on the second interlayer insulating film, and carbon nanotubes on the catalyst metal film located in the contact hole. The carbon nanotubes electrically connecting the first interconnect layer and the second interconnect layer.

Abstract: Graphene wiring of an embodiment has a graphene intercalation compound including a multilayer graphene having graphene sheets stacked therein and an interlayer substance disposed between layers of the multilayer graphene, and an interlayer cross-linked layer connected to a side surface of the multilayer graphene. The interlayer cross-linked layer has a cross-linked molecular structure including multiple bonded molecules cross-linking the graphene sheets included in the multilayer graphene.

Abstract: A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer.

Abstract: A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.

Abstract: A graphene wiring of an embodiment includes graphene, first conductive layers, second conductive layers, and a third conductive layer. The first conductive layers are connected to first sides of the graphene opposite to each other in a longitudinal direction of the wiring. The second conductive layers are connected to second sides of the graphene opposite to each other in a widthwise direction of the wiring. The third conductive layer is connected to a top surface of the graphene. The first and second conductive layers are connected to each other.

Abstract: Provided is a cyanate ester polymer having excellent flame retardance, low dielectric constant, low dielectric loss tangent and high heat resistance. Specifically provided is a cyanate ester polymer obtained by polymerizing a cyanate ester compound represented by the following general formula (1). (1) In the formula, X represents OCN or OH, and 10-100% by mol of X is composed of OCN.

Abstract: A method for efficiently producing a cyanogen halide with suppressed side effects, and a method for producing a high-purity cyanate ester compound at a high yield includes contacting a halogen molecule with an aqueous solution containing hydrogen cyanide and/or a metal cyanide, so that the hydrogen cyanide and/or the metal cyanide is allowed to react with the halogen molecule in the reaction solution to obtain the cyanogen halide, wherein more than 1 mole of the hydrogen cyanide or the metal cyanide is used based on 1 mole of the halogen molecule, and when an amount of substance of an unreacted hydrogen cyanide or an unreacted metal cyanide is defined as mole (A) and an amount of substance of the generated cyanogen halide is defined as mole (B), the reaction is terminated in a state in which (A):(A)+(B) is between 0.00009:1 and 0.2:1.

Abstract: A graphene wiring of an embodiment includes graphene, first conductive layers, second conductive layers, and a third conductive layer. The first conductive layers are connected to first sides of the graphene opposite to each other in a longitudinal direction of the wiring. The second conductive layers are connected to second sides of the graphene opposite to each other in a widthwise direction of the wiring. The third conductive layer is connected to a top surface of the graphene. The first and second conductive layers are connected to each other.

Abstract: A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer.

Abstract: A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.

Abstract: A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011>±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.

Abstract: To provide a novel cyanate ester compound that can realize a cured product having low dielectric constant and dielectric loss tangent, and excellent flame retardancy and heat resistance, and moreover has relatively low viscosity, excellent solvent solubility, and also excellent handling properties, and a method for producing the cyanate ester compound, and a curable resin composition and the like using the cyanate ester compound. A phenol-modified xylene formaldehyde resin is cyanated.

Abstract: A graphene wiring has a substrate, a catalyst layer on the substrate, a graphene layer on the catalyst layer, and a dopant layer on a side surface of the graphene layer. An atomic or molecular species is intercalated in the graphene layer or disposed on the graphene layer.

Abstract: According to one embodiment, a semiconductor device includes a metal interconnect and a graphene interconnect which are stacked to one another.

Abstract: A graphene wiring has a substrate a catalyst layer on the substrate a first graphene sheet layer on the catalyst layer and a second graphene sheet layer on the first graphene layer. The second graphene layer comprises multilayer graphene sheets. The multilayer graphene sheets are intercalated with an atomic or molecular species.

Abstract: A semiconductor device has a substrate a lower layer wiring on the substrate, an interlayer dielectric on the lower layer wiring having a contact hole, a catalyst metal layer at the bottom of the contact hole having catalyst metal particles, multi-walled carbon nanotubes on the catalyst metal layer passing through the contact hole, and an upper layer wiring on the multi-walled carbon nanotubes. The multi-walled carbon nanotubes are intercalated with an atomic or molecular species.

Abstract: A curable resin composition which is in a liquid form at ordinary temperature and provides a cured product having excellent heat resistance and a low thermal expansion rate is provided. The curable resin composition according to the present invention comprises: a cyanate ester compound (A) represented by the following formula (I); and a curing accelerator (B): wherein R1 represents a hydrocarbon group having 2 to 20 carbon atoms.