Abstract: There is provided a novel cyanate ester compound that can provide a cured product possessing excellent heat resistance. The cyanate ester compound is represented by general formula (1): wherein R1 represents an aromatic substituent having 6 to 10 carbon atoms or an alkyl group having 1 to 20 carbon atoms; Rx1's each independently represent a hydrogen atom, an alkyl or alkoxy group having 1 to 20 carbon atoms, or a halogen; Ry1's each independently represent a hydrogen atom, an alkyl or alkoxy group having 1 to 20 carbon atoms, or a halogen; m is an integer of 0 to 4; and n is an integer of 0 to 4.

Abstract: A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer.

Abstract: A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.

Abstract: A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

Abstract: According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

Abstract: In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step.

Abstract: A curable resin composition which can achieve a cured product in which the generation of cracks upon curing is suppressed and which has both a low thermal expansion rate and a low water absorbability is provided. The curable resin composition comprises: at least a cyanate ester compound (A) represented by the following formula (I); a metal complex catalyst (B); and an additive (C), wherein the additive (C) contains any one or more selected from the group consisting of a compound represented by the following general formula (II), a compound represented by the following general formula (III), and a tertiary amine.

Abstract: There is provided a novel dicyanatophenyl-based difunctional cyanate ester which is in a liquid form at ordinary temperature and can obtain a cured product having an excellent low thermal expansion rate. There is disclosed a cyanate ester compound represented by the following formula (I): (wherein R1 represents a hydrocarbon group having 2 to 20 carbon atoms).

Abstract: A method for producing hexagonal boron nitride single crystals including mixing boron nitride crystals with a solvent thereby obtaining a mixture, heating and melting the mixture under high-temperature and high-pressure thereby obtaining a melted mixture, and recrystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boronitride of alkaline earth metal, or boronitride of alkali metal and the boronitride of alkaline earth metal.

Abstract: According to the embodiment, an electron emission element includes a conductive substrate, a first diamond layer of a first conductivity type formed on the conductive substrate, and a second diamond layer of the first conductivity type formed on the first diamond layer. Thereby, it becomes possible to provide the electron emission element having a high electron emission amount and a high current density even in a low electric field at low temperature and the electron emission apparatus using this electron emission element.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

Abstract: According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

Abstract: A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

Abstract: A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011> ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.

Abstract: A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening.

Abstract: There is provided a novel cyanate ester compound that can provide a cured product possessing excellent heat resistance. The cyanate ester compound is represented by general formula (1): wherein R1 represents an aromatic substituent having 6 to 10 carbon atoms or an alkyl group having 1 to 20 carbon atoms; Rx1's each independently represent a hydrogen atom, an alkyl or alkoxy group having 1 to 20 carbon atoms, or a halogen; Ry1's each independently represent a hydrogen atom, an alkyl or alkoxy group having 1 to 20 carbon atoms, or a halogen; m is an integer of 0 to 4; and n is an integer of 0 to 4.

Abstract: A structure includes a conductive film (12) provided in an underlying layer (10); and a carbon nanotube bundle (20) including a plurality of carbon nanotubes each having one end connected to the conductive film (12), wherein, at other end side of the carbon nanotube bundle (20), at least carbon nanotubes allocated at outer side of the carbon nanotube bundle (20) extend with convex curvatures toward the outside of the carbon nanotube bundle (20), and the convex curvatures of the carbon nanotubes allocated at the outer side of the carbon nanotube bundle are larger than those of inner side of the carbon nanotube bundle (20), and diameters of the carbon nanotube bundle (20) decrease toward the other end of the carbon nanotube bundle (20).

Abstract: A method for producing hexagonal boron nitride single crystals including mixing boron nitride crystals with a solvent thereby obtaining a mixture, heating and melting the mixture under high-temperature and high-pressure thereby obtaining a melted mixture, and rectystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boronitride of alkali earth metal, or boronitride of alkali metal and the boronitride of alkali earth metal.

Abstract: According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

Abstract: A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.