Abstract: The objective of the present invention is to provide an unexpected detecting apparatus enabled to evaluate an evenness of a compound coated on an electrode of a battery. The detecting apparatus (1) detects an evenness of a compound (12) coated on an electrode (10) of a battery, and includes a first sensor (20) for measuring a mass per unit area of the compound (12) in any points thereof, a second sensor (30, 50) for measuring a thickness of the compound (12) in the any points, and a holder (40, 60) for holding the first and second sensors (20, 30, 50), in which the first and second sensors (20, 30, 50) measure the mass and thickness at the same time, and the evenness is evaluated on the basis of the measured mass and thickness.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a contact hole, a contact plug and a nickel silicide film. The semiconductor substrate includes silicon. The interlayer dielectric film is formed on the semiconductor substrate. The contact hole is formed in the interlayer dielectric film. A contact plug is formed within the contact hole. A nickel silicide film is formed on a bottom part of the contact hole and electrically connected to the contact plug. A position of an interface between the nickel silicide and the contact plug is higher than a position of an interface between the semiconductor substrate and the interlayer dielectric film.

Abstract: According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

Abstract: A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug.

Abstract: The present invention relates to a tape heater including: at least one flexible fabric base formed from a heat-resistant thread, the at least one flexible fabric base including a first fabric base part and a second fabric base part; and a heater member, in which the heater member is interposed between the first fabric base part and the second fabric base pan. Since the heater member is interposed between the fabric base(s), the tape heater of the present invention exhibits superior flexibility and stretchability and is superior in easily being wrapped around a pipe, as well as reliably protecting the heater member. Further, tape heaters can be continually manufactured, so long as weaving or knitting of the fabric base(s) is caused to proceed while the heater member is interposed between the fabric base(s), to thus join the fabric base(s). Hence, enhancement of production efficiency and prevention of an increase in production cost can be attained.

Abstract: A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug.

Abstract: A semiconductor device includes a first contact plug arranged above a semiconductor substrate and using aluminum (Al) as a material; a second contact plug arranged on and in contact with the first contact plug and using a refractory metal material; a first dielectric film arranged on a flank side of the first and second contact plugs; a wire arranged above the second contact plug and using copper (Cu) as a material; a second dielectric film arranged on a flank side of the wire; and a barrier film arranged at least between the wire and the first dielectric film and between the wire and the second dielectric film.

Abstract: A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

Abstract: A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

Abstract: A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of ?g/2 (?g: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·?g/2 from the slots to an emission end of the plasma head is provided (n: an integral number).

Abstract: A plasma processing apparatus that passes a microwave, which is introduced into a waveguide, through a slot and propagates the microwave to a dielectric, converts a predetermined gas supplied into a processing chamber into plasma, and applies plasma processing to a substrate, in which a plurality of the waveguides are disposed side by side, a plurality of dielectrics are provided for each of the waveguides, and one slot, or two or more slots is or are provided for each of the dielectrics, is provided. The area of each of the dielectrics can be made extremely small, and a microwave can be reliably propagated into the entire surface of the dielectric. A thin support member that supports the dielectric can be used, a uniform electromagnetic field can be formed in an entire area above the substrate, and uniform plasma can be generated in the processing chamber.

Abstract: A method of detecting a temperature of an object in a multiple-reflection environment by a radiation pyrometer includes the steps of detecting a radiation strength emitted from a target region of an object, applying a correction to the radiation strength so as to correct the effect of multiple reflections of a radiation emitted from the object, applying a correction to the radiation strength so as to correct a reflection loss caused at an end surface of an optical medium interposed between the object and a sensing head of the pyrometer, applying a correction to the radiation strength with regard to an optical absorption loss caused in the optical medium, and applying a correction to the radiation strength with regard to a stray radiation coming in to the sensing head from a source other than the target region of the object.

Abstract: A thermal processing apparatus capable of rapidly increasing and decreasing a temperature of a target object in a process chamber being thermally treated. A heat source heats the target object and a cooling arrangement including a bottom part of the process chamber cools the object. A gas having high thermal conductivity is introduced into the chamber to promote heat transfer. A moving mechanism relatively moves the object with respect to the cooling arrangement.

Abstract: A thermal processing apparatus rapidly increases and decreases a temperature of a target object at a low-power consumption. The target object is subjected to a thermal treatment in a process chamber. A heat source heats the target object from a side of a first surface of the target object. A cooling arrangement including a bottom part of the process chamber cools the object from a side of a second surface opposite to the first surface. A gas having high thermal conductivity is introduced into a space between the target object and the bottom part so as to promote heat transfer from the object to the bottom part of the process chamber. A moving mechanism moves at least one of the object and the bottom part of the process chamber so that the object can be heated with less influence by the cooling arrangement being positioned away from the target object while the target object can be efficiently cooled by the cooling arrangement being positioned within 5 mm from the target object.

Abstract: The present invention intends to improve the accuracy of temperature measurement when measuring the temperature of a semiconductor wafer by a radiation thermometer on the basis of the idea of virtual blackbody simulated by multiple reflection of light. A system includes a wafer (W), a circular reflector 1 of a radius R disposed opposite to the wafer (W), and a probe (2) disposed in a through hole formed in the reflector (1). The probe (2) is a through hole. The radiation intensity of radiation passed the through hole is determined by image data provided by a CCD camera disposed behind the back surface of the reflector (1). An error in measured radiation intensity of radiation falling the probe (2) due to light that enters a space between the wafer (W) and the reflector (1) and a space between the reflector (1) and the probe (2) and light leaks from the same spaces is corrected, the emissivity of the wafer (W) is calculated and the temperature of the wafer (W) is determined.

Abstract: A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part.

Abstract: A virtual blackbody radiation system (10) includes a light-emitting unit (1) including an LED driven by a fixed current, a light-receiving unit (2) including a sapphire rod, and an optical unit (3) including lenses (31, 32) for converging light emitted by the light-emitting unit in a convergent light. A cylindrical member (41)included in the optical unit (3)can be moved along the optical axis by a servomotor (42) included in a focus adjusting unit (4) for positional adjustment. The focus of convergent light relative to the light-receiving unit (2) can be adjusted by moving the lens (32) disposed in the cylindrical member (41) along the optical axis relative to the light-receiving unit (2). The intensity of the convergent light on the light-receiving unit (2) can be adjusted to the intensity of predetermined blackbody radiation.

Abstract: A thermal processing unit of the invention includes a substrate-holder which can support a plurality of substrates in such a manner that the plurality of substrates are arranged at a predetermined pitch, and a chamber vessel for housing the substrate-holder. The inside of the chamber vessel may be made a vacuum. A gas-introducing slit having a small conductance is provided in one part of a peripheral area of the plurality of substrates held by the substrate-holder. The gas-introducing slit extends in a direction in which the plurality of substrates are arranged and supplies a processing gas for a thermal process into the chamber vessel. A gas-absorbing opening having a large conductance is provided in another part of the peripheral area of the plurality of substrates held by the substrate-holder. The gas-absorbing opening extends in the direction in which the plurality of substrates are arranged. The substrate-holder may be loaded into and unloaded out of the chamber vessel by a loading mechanism.

Abstract: An antifriction bearing includes a fixed ring which comprises a steel containing up to about 10% of residual austenite. An alternator for vehicles includes a stator mounted on a frame, a rotor having its rotary shaft rotatably supported by a pair of bearings on the frame and a drive pulley mounted on one end of the shaft projecting outward from the frame. The outer ring of at least the bearing toward the pulley comprises a steel containing up to about 10% of residual austenite.

Abstract: An antifriction bearing includes a fixed ring which comprises a steel containing up to about 10% of residual austenite. An alternator for vehicles includes a stator mounted on a frame, a rotor having its rotary shaft rotatably supported by a pair of bearings on the frame and a drive pulley mounted on one end of the shaft projecting outward from the frame. The outer ring of at least the bearing toward the pulley comprises a steel containing up to about 10% of residual austenite.