Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A package, comprising a substrate having a surface comprising metal traces, a solder mask covering at least a portion of the surface of the substrate, and a first aperture through the solder mask exposing a plurality of metal traces.

Abstract: A package is disclosed, which includes a substrate, a solder masker, and a first aperture through the solder mask. The substrate has a surface on which metal traces are formed. The solder mask covers at least a portion of the surface of the substrate. And the first aperture through the solder mask exposes a plurality of the metal traces.

Abstract: A package is disclosed, which includes a substrate, a solder masker, and a first aperture through the solder mask. The substrate has a surface on which metal traces are formed. The solder mask covers at least a portion of the surface of the substrate. And the first aperture through the solder mask exposes a plurality of the metal traces.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A reliable, chip scale or flip chip semiconductor device which can be directly attached to a PC board without the use of an underfill material to absorb stress on the solder joints interconnecting the device and board is provided by a silicon chip, having the substrate thinned until the chip thickness is in the range of 50 to 250 microns, attaching a backing or cap layer with specific thermal properties to approximate those of a printed circuit board (PCB), and providing solder bump contacts attached to the input/output terminals.

Abstract: A semiconductor device employs a support structure to mitigate damage to dielectric layers having a low dielectric constant (k). The semiconductor device includes at least one inter-level dielectric layer (ILD) comprising a material having a low dielectric constant (k), and at least one support structure disposed within the low-k dielectric layer. The support structure mitigates damage of the semiconductor device by providing a mechanically stable interface between two layers in the semiconductor device.

Abstract: A reliable, chip scale or flip chip semiconductor device which can be directly attached to a PC board without the use of an underfill material to absorb stress on the solder joints interconnecting the device and board is provided by a silicon chip, having the substrate thinned until the chip thickness is in the range of 50 to 250 microns, attaching a backing or cap layer with specific thermal properties to approximate those of a printed circuit board (PCB), and providing solder bump contacts attached to the input/output terminals.

Abstract: In accordance with the present invention, a built-up bump pad structure and method for the same are provided. The bump pad structure includes a substrate, a bump pad disposed upon the substrate, a solder mask disposed upon the substrate defining an opening around the bump pad, and a conductive material deposited upon the bump pad such that the conductive material at least partially fills the opening around the bump pad.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: In one embodiment, an integrated circuit package includes a die associated with an integrated circuit and a die pad. The die has a bottom surface, and the pad has a top surface opposite the bottom surface of the die. Two or more bump pad traces are each coupled to the top surface of the pad, and one or more other traces are each coupled to the top surface of the pad in a corresponding inter-bump pad region between adjacent bump pad traces. A number of solder bumps each couple the die to the pad at a corresponding bump pad trace to provide electrical connectivity between circuitry associated with the die and circuitry associated with the die pad. Each inter-bump pad region is free from any solder mask material deposited to control collapse of the die towards the pad during a reflow process for bonding the die to the pad using the bumps, a supporting structure that contacts the die during the reflow process having been used instead.

Abstract: In one embodiment, an integrated circuit package includes a die associated with an integrated circuit and a die pad. The die has a bottom surface, and the pad has a top surface opposite the bottom surface of the die. Two or more bump pad traces are each coupled to the top surface of the pad, and one or more other traces are each coupled to the top surface of the pad in a corresponding inter-bump pad region between adjacent bump pad traces. A number of solder bumps each couple the die to the pad at a corresponding bump pad trace to provide electrical connectivity between circuitry associated with the die and circuitry associated with the die pad. Each inter-bump pad region is free from any solder mask material deposited to control collapse of the die towards the pad during a reflow process for bonding the die to the pad using the bumps, a supporting structure that contacts the die during the reflow process having been used instead.

Abstract: In accordance with the present invention, a built-up bump pad structure and method for the same are provided. The bump pad structure includes a substrate, a bump pad disposed upon the substrate, a solder mask disposed upon the substrate defining an opening around the bump pad, and a conductive material deposited upon the bump pad such that the conductive material at least partially fills the opening around the bump pad.

Abstract: The present invention comprises a low cost device (10, 20) and a method (30) of forming an electrical interconnect between two metal substrate layers configured in a flip-chip format or a wire bonded format. The invention includes a first metal substrate layer (12), a second metal substrate layer (14), and an organic tape layer (16) attached therebetween as a dielectric. The organic tape layer (16) includes a series of spaced apart vias (15) adapted to receive solder paste (13). The second metal layer (14) includes a plurality of openings (40,42,44) spaced along the surface thereof and coaxially aligned with the spaced vias (15). Further, the invention includes a plurality of solder balls (17, 18, 19) placed across the respective openings (40,42,44) of the second metal layer (14) such that each solder ball (17-19) attaches to the solder paste (13) forming an electrical interconnect running substantially in parallel between the metal layers (12, 14).

Abstract: The present invention comprises a low cost device (10, 20) and a method (30) of forming an electrical interconnect between two metal substrate layers configured in a flip-chip format or a wire bonded format. The invention includes a first metal substrate layer (12), a second metal substrate layer (14), and an organic tape layer (16) attached therebetween as a dielectric. The organic tape layer (16) includes a series of spaced apart vias (15) adapted to receive solder paste (13). The second metal layer (14) includes a plurality of openings (40,42,44) spaced along the surface thereof and coaxially aligned with the spaced vias (15). Further, the invention includes a plurality of solder balls (17, 18, 19) placed across the respective openings (40,42,44) of the second metal layer (14) such that each solder ball (17-19) attaches to the solder paste (13) forming an electrical interconnect running substantially in parallel between the metal layers (12, 14).

Abstract: The present invention comprises a low cost device (10, 20) and a method (30) of forming an electrical interconnect between two metal substrate layers configured in a flip-chip format or a wire bonded format. The invention includes a first metal substrate layer (12), a second metal substrate layer (14), and an organic tape layer (16) attached therebetween as a dielectric. The organic tape layer (16) includes a series of spaced apart vias (15) adapted to receive solder paste (13). The second metal layer (14) includes a plurality of openings (40,42,44) spaced along the surface thereof and coaxially aligned with the spaced vias (15). Further, the invention includes a plurality of solder balls (17, 18, 19) placed across the respective openings (40,42,44) of the second metal layer (14) such that each solder ball (17-19) attaches to the solder paste (13) forming an electrical interconnect running substantially in parallel between the metal layers (12, 14).

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.