Abstract: A finFET device includes a doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped or p-doped source or drain extension is disposed. The doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer. After formation of the cavity, advanced processing controls (APC) (i.e., integrated metrology) is used to determine the distance of recess, without exposing the substrate to an oxidizing environment. The isotropic etch process, the metrology, and selective epitaxial growth may be performed in the same platform.

Abstract: A flow guide body for an aircraft includes a main body having an outer aerodynamic surface having a plurality of outlet openings, and flow control devices, each having an inlet, an interaction chamber, a first outlet and a second outlet. A first control inlet is connected to the interaction chamber at the first side of the chamber axis. The outlets are each connected to outlet openings in the aerodynamic surface. Each outlet has a control outlet. A second flow control device is arranged such that one outlet is connected with the inlet of the first flow control device. One of the control outlets of the first flow control device is connected to the first control inlet of the first flow control device, and the other of the control outlets of the first flow control device is connected to the first control inlet of the second flow control device.

Abstract: A domestic dishwashing machine includes a dishwashing container, a door, pivotably mounted on the dishwashing container, for closing a dishwashing chamber formed in the dishwashing container, and a dosing system, arranged at the door, for a solid detergent, for example, in tablet form. The dosing system may include an annular magazine having a rotatably arranged rotor which delimits a plurality of radially outwardly open storage compartments, distributed in the circumferential direction, which are each to receive a detergent tablet. In some embodiments, a chute is arranged beneath the rotor, and the chute allows a detergent tablet which has fallen into the chute to fall freely to an outlet opening at which the detergent tablet can pass into the dishwashing chamber. By rotation of the rotor, a storage compartment filled with a detergent tablet can move into a position radially opposite a dosing opening, at which the chute begins.

Abstract: A finFET device includes a doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped or p-doped source or drain extension is disposed. The doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer. After formation of the cavity, advanced processing controls (APC) (i.e., integrated metrology) is used to determine the distance of recess, without exposing the substrate to an oxidizing environment. The isotropic etch process, the metrology, and selective epitaxial growth may be performed in the same platform.

Abstract: A domestic dishwashing machine includes a machine body having a dishwashing chamber formed therein, a door for closing the dishwashing chamber, which door is mounted on the machine body so as to be pivotable about a horizontal pivot axis close to the floor, and a door latch for holding the door closed, having a latch assembly installed in a body roof above the dishwashing chamber and includes a one-piece closing member arranged to be movable between an open position and a closed position, and a closing spring arrangement supported on the closing member and which, in the open position of the closing member, urges the closing member into blocking engagement with a blocking surface that prevents relaxation of the closing spring arrangement, and comes into gripping engagement with an engagement structure arranged on the door and pulls the door shut under the action5 of the relaxing closing spring arrangement.

Abstract: The invention relates to a formulation which is used on textile surfaces, tissues, non-crimp fabrics, knitted fabrics, fibers, non-woven fabrics and weft knitted fabrics and which demonstrates an improved resistance to abrasion. The invention also relates to a process of preparing a formulation for improving abrasion resistance of textiles and the process of treating textiles, non-woven fabrics and leather articles for improving abrasion resistance.

Abstract: An ice maker includes a carriage, an ice mold defining a plurality of cavities that is movably coupled to the carriage such that the ice mold is movable relative to the carriage between a home position and a harvest position, and a detection lever movably coupled to the carriage such that the detection lever is movable between a retracted position and an extended position, the detection member being biased toward the extended position. The ice maker further includes a retention mechanism configured to retain the detection lever in the retracted position when the ice mold is in the harvest position.

Abstract: Electronic devices and methods of forming electronic devices with gate-all-around non-I/O devices and finlike structures for I/O devices are described. A plurality of dummy gates is etched to expose a fin comprising alternating layers of a first material and a second material. The second material layers are removed to create openings and the first material layers remaining are epitaxially grown to form a finlike structure.

Abstract: Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.

Abstract: A domestic electrical appliance, in particular a dishwashing machine, includes a main appliance body having a product treatment chamber, a door mounted on the main appliance body so as to be pivotable about a horizontal pivot axis close to the floor for closing an access opening to the product treatment chamber and a locking device having a locking assembly arranged on the main appliance body and a closing pin arranged on the door. The locking assembly has a latch movable between a release position and a latching position where the latch engages behind the closing pin to hold the door closed and releases the closing pin to open the door. The latch performs a rotational movement along a horizontal plane as it moves between the release position and the latching position, the closing pin being oriented vertically when the door is closed.

Abstract: Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion includes a first plurality of channels and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.

Abstract: Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion includes a first plurality of channels and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.

Abstract: The disclosure relates to a control method for controlling at least one injector valve in a fuel injection system of an internal combustion engine. An opening time of the injector valve is selected such that, in a fault situation in the fuel injection system, an opening time of the injector valve is situated in a pressure valley of a pressure oscillation prevailing in a high-pressure region of the fuel injection system.

Abstract: A dispensing device for introducing a pourable detergent in metered amounts into a treatment chamber of a program-controlled cleaning appliance includes a housing provided with a loading aperture; a carrier unit rotatably mounted in the housing and accessible via the loading aperture and which serves to replaceably receive a supply container for holding the detergent; and a housing cover providing fluid-tight closure of the loading aperture. The housing cover includes a cover member providing the fluid-tight closure of the loading aperture and a locking member movably attached to the cover member, the locking member including a plurality of locking elements, each cooperating with a respective locking finger disposed on the housing.

Abstract: A flow guide body for an aircraft includes a main body having an outer aerodynamic surface having a plurality of outlet openings, and flow control devices, each having an inlet, an interaction chamber, a first outlet and a second outlet. A first control inlet is connected to the interaction chamber at the first side of the chamber axis. The outlets are each connected to outlet openings in the aerodynamic surface. Each outlet has a control outlet. A second flow control device is arranged such that one outlet is connected with the inlet of the first flow control device. One of the control outlets of the first flow control device is connected to the first control inlet of the first flow control device, and the other of the control outlets of the first flow control device is connected to the first control inlet of the second flow control device.

Abstract: The invention relates to a preparation which is used on textile surfaces, tissues, non-crimp fabrics, knitted fabrics, fibers, non-woven fabrics and weft knitted fabrics and which demonstrates an improved resistance to abrasion. The invention also relates to the use of the preparation including on textiles, non-woven fabrics and leather articles.

Abstract: A finFET device includes a doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped or p-doped source or drain extension is disposed. The doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer. After formation of the cavity, advanced processing controls (APC) (i.e., integrated metrology) is used to determine the distance of recess, without exposing the substrate to an oxidizing environment. The isotropic etch process, the metrology, and selective epitaxial growth may be performed in the same platform.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: The present disclosure generally relates to methods of selectively forming titanium silicides on substrates. The methods are generally utilized in conjunction with contact structure integration schemes. In one embodiment, a titanium silicide material is selectively formed on a substrate as an interfacial layer on a source/drain region. The titanium silicide layer may be formed at a temperature within range of about 400 degrees Celsius to about 500 degrees Celsius.

Abstract: Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.