Patents by Inventor Matthia Bauer
Matthia Bauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160013046Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.Type: ApplicationFiled: July 1, 2015Publication date: January 14, 2016Inventors: SWAMINATHAN T. SRINIVASAN, Aaron Muir Hunter, Matthias Bauer, Amikam Sade
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Patent number: 9190515Abstract: Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm?3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.Type: GrantFiled: February 12, 2010Date of Patent: November 17, 2015Assignee: ASM America, Inc.Inventor: Matthias Bauer
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Patent number: 9014877Abstract: An aircraft with aerofoils including a main wing and a control flap that includes an adjustment flap. The aircraft includes an actuator for the control flap, as well as a sensor device for acquiring the position of the control flap, an arrangement of flow-influencing devices for influencing the fluid that flows over a segment of the main wing, and flow-state sensor devices for measuring the flow state. The aircraft includes a flight control device connected to the sensor device for acquiring the position of the control flap and to the flow-state sensor devices, and connected to the actuator and flow-influencing devices for transmitting actuating commands, and a flight-state sensor device connected to the flight control device for transmitting flight states. The flight control device includes a function that selects the flow-influencing devices that are operated for optimizing local lift coefficients on the aerofoil, depending on the flight state.Type: GrantFiled: June 16, 2012Date of Patent: April 21, 2015Assignee: Airbus Operations GmbHInventors: Burkhard Gölling, Frank Haucke, Matthias Bauer, Wolfgang Nitsche, Inken Peltzer
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Patent number: 8844571Abstract: A fluid actuator for influencing the flow along a flow surface by ejecting a fluid flowing through the fluid actuator is described. The fluid actuator has at least two outlet lines with outlet openings at the respective ends thereof, and a feed line connected to the outlet lines for feeding fluid at a supply pressure, a flow direction diverting device into which the feed line opens and out of which the outlet lines open, and an adjusting device coupled to the flow direction diverting device to control the latter. The adjusting device is configured so the fluid is conducted successively in a cyclic sequence into each of the outlet lines. A discharge device for discharging a fluid out of a flow body, and a flow body having a multiplicity of discharge openings and a discharge device of said type are also described.Type: GrantFiled: January 22, 2012Date of Patent: September 30, 2014Assignee: Airbus Operations GmbHInventors: Burkhard Gölling, Matthias Bauer
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Patent number: 8834955Abstract: A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line.Type: GrantFiled: April 3, 2014Date of Patent: September 16, 2014Assignee: ASM America, Inc.Inventors: Matthias Bauer, Gregory M. Bartlett
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Patent number: 8809170Abstract: Methods of selective formation leave high quality epitaxial material using a repeated deposition and selective etch process. During the deposition process, an inert carrier gas is provided with a silicon-containing source without hydrogen carrier gas. After depositing silicon-containing material, an inert carrier gas is provided with an etchant to selectively etch deposited material without hydrogen. The deposition and etch processes can be repeated until a desired thickness of silicon-containing material is achieved. Using the processes described within, it is possible to maintain temperature and pressure conditions, as well as inert carrier gas flow rates, to provide for increased throughput. The inert flow can be constant, or etch rates can be increased by reducing inert flow for the etch phases of the cycles.Type: GrantFiled: May 19, 2011Date of Patent: August 19, 2014Assignee: ASM America Inc.Inventor: Matthias Bauer
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Publication number: 20140209177Abstract: A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line.Type: ApplicationFiled: April 3, 2014Publication date: July 31, 2014Inventors: Matthias Bauer, Gregory M. Bartlett
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Patent number: 8728239Abstract: A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line.Type: GrantFiled: July 29, 2011Date of Patent: May 20, 2014Assignee: ASM America, Inc.Inventors: Matthias Bauer, Gregory M Bartlett
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Publication number: 20140007959Abstract: A method for generating fluid pulses is provided. The device comprises a first channel with a first fluid inlet and a second channel with a second fluid inlet, in which the first fluid inlet and second fluid inlet are substantially situated opposite each other. The first channel comprises a first control outlet at the height of the first fluid inlet, and the second channel comprises a second control outlet at the height of the second fluid inlet, in which the respective control outlet is located in front of the respective fluid inlet in relation to the inflowing direction of the fluid inlet.Type: ApplicationFiled: July 3, 2013Publication date: January 9, 2014Inventors: Matthias Bauer, Jakob Lohse, Wolfgang Nitsche
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Publication number: 20130284294Abstract: The invention relates to fluid actuator for influencing the flow along a flow surface through ejection of a fluid. By means of a like fluid actuator, a continuous flow is distributed to at least two outlet openings in order to generate fluid pulses out of these outlet openings. Control of this distribution takes place inside an interaction chamber which is supplied with fluid flow via a feed line. Into this interaction chamber there merge at least two control lines via control openings to which a respective different pressure may be applied. Depending on the pressure difference at the control openings, the flow in the interaction chamber is distributed to the individual outlet openings.Type: ApplicationFiled: April 11, 2013Publication date: October 31, 2013Inventors: Burkhard Gölling, Matthias Bauer, Wolfgang Nitsche
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Patent number: 8530340Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.Type: GrantFiled: September 9, 2009Date of Patent: September 10, 2013Assignee: ASM America, Inc.Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Publication number: 20130098949Abstract: An ice chute arrangement that includes a fixed frame adjacent to an ice passageway. A flap is pivotal upon the frame between a first flap position and a second flap position. The flap blocks the ice passageway when the flap is in the first position, reveals the passageway when the flap is in the second position and transitions through an intermediate position. The arrangement includes a paddle pivotal upon the frame between a first position and a second position. The paddle causes the flap to pivot from the first position to the second position as the paddle pivots from the first position to the second position. The arrangement includes a first spring that biases the flap toward the first flap position while the flap is in the first flap position and biases the flap toward the second flap position while the flap is in the second flap position.Type: ApplicationFiled: October 25, 2011Publication date: April 25, 2013Applicant: EMZ-HANAUER GMBH & CO. KGAAInventors: Albert Dirnberger, Matthias Bauer, Christian Rittner
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Publication number: 20130035808Abstract: An aircraft with aerofoils including a main wing and a control flap that includes an adjustment flap. The aircraft includes an actuator for the control flap, as well as a sensor device for acquiring the position of the control flap, an arrangement of flow-influencing devices for influencing the fluid that flows over a segment of the main wing, and flow-state sensor devices for measuring the flow state. The aircraft includes a flight control device connected to the sensor device for acquiring the position of the control flap and to the flow-state sensor devices, and connected to the actuator and flow-influencing devices for transmitting actuating commands, and a flight-state sensor device connected to the flight control device for transmitting flight states. The flight control device includes a function that selects the flow-influencing devices that are operated for optimising local lift coefficients on the aerofoil, depending on the flight state.Type: ApplicationFiled: June 16, 2012Publication date: February 7, 2013Applicant: AIRBUS OPERATIONS GMBHInventors: Burkhard GÖLLING, Frank HAUCKE, Matthias BAUER, Wolfgang NITSCHE, Inken PELTZER
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Patent number: 8367528Abstract: Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow continues such that lower quality epitaxial material may be removed, as well as any non-epitaxial material that may have been deposited. The pulse of silicon-source containing vapor may be repeated until a desired thickness of epitaxial material is selectively achieved in semiconductor windows, such as recessed source/drain regions.Type: GrantFiled: November 17, 2009Date of Patent: February 5, 2013Assignee: ASM America, Inc.Inventors: Matthias Bauer, Shawn G. Thomas
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Publication number: 20130029496Abstract: A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line.Type: ApplicationFiled: July 29, 2011Publication date: January 31, 2013Inventors: Matthias Bauer, Gregory M. Bartlett
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Publication number: 20120295427Abstract: Methods of selective formation leave high quality epitaxial material using a repeated deposition and selective etch process. During the deposition process, an inert carrier gas is provided with a silicon-containing source without hydrogen carrier gas. After depositing silicon-containing material, an inert carrier gas is provided with an etchant to selectively etch deposited material without hydrogen. The deposition and etch processes can be repeated until a desired thickness of silicon-containing material is achieved. Using the processes described within, it is possible to maintain temperature and pressure conditions, as well as inert carrier gas flow rates, to provide for increased throughput. The inert flow can be constant, or etch rates can be increased by reducing inert flow for the etch phases of the cycles.Type: ApplicationFiled: May 19, 2011Publication date: November 22, 2012Applicant: ASM AMERICA, INC.Inventor: Matthias Bauer
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Patent number: 8278176Abstract: Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove non-epitaxial material while deposited epitaxial material builds up cycle-by-cycle. Quality of the epitaxial material improves relative to selective processes where no deposition occurs on insulators. Use of a germanium catalyst during the etch phases of the process aid etch rates and facilitate economical maintenance of isothermal and/or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material over the insulating regions and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase.Type: GrantFiled: September 28, 2006Date of Patent: October 2, 2012Assignee: ASM America, Inc.Inventors: Matthias Bauer, Keith Doran Weeks
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Publication number: 20120244688Abstract: Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove non-epitaxial material while deposited epitaxial material builds up cycle-by-cycle. Quality of the epitaxial material improves relative to selective processes where no deposition occurs on insulators. Use of a germanium catalyst during the etch phases of the process aid etch rates and facilitate economical maintenance of isothermal and/or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material over the insulating regions and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase.Type: ApplicationFiled: May 31, 2012Publication date: September 27, 2012Applicant: ASM AMERICA, INC.Inventors: Matthias Bauer, Keith Doran Weeks
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Publication number: 20120186682Abstract: A fluid actuator for influencing the flow along a flow surface by ejecting a fluid flowing through the fluid actuator is described. The fluid actuator has at least two outlet lines with outlet openings at the respective ends thereof, and a feed line connected to the outlet lines for feeding fluid at a supply pressure, a flow direction diverting device into which the feed line opens and out of which the outlet lines open, and an adjusting device coupled to the flow direction diverting device to control the latter. The adjusting device is configured so the fluid is conducted successively in a cyclic sequence into each of the outlet lines. A discharge device for discharging a fluid out of a flow body, and a flow body having a multiplicity of discharge openings and a discharge device of said type are also described.Type: ApplicationFiled: January 22, 2012Publication date: July 26, 2012Applicant: AIRBUS OPERATIONS GMBHInventors: Burkhard GÖLLING, Matthias BAUER
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Publication number: 20110117732Abstract: Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow continues such that lower quality epitaxial material may be removed, as well as any non-epitaxial material that may have been deposited. The pulse of silicon-source containing vapor may be repeated until a desired thickness of epitaxial material is selectively achieved in semiconductor windows, such as recessed source/drain regions.Type: ApplicationFiled: November 17, 2009Publication date: May 19, 2011Applicant: ASM America, Inc.Inventors: Matthias Bauer, Shawn G. Thomas