Abstract: A door latch for an electrical domestic appliance includes a rotary member arranged to be rotationally movable between a closing rotational position and a release rotational position and is spring-biased in the direction towards the release rotational position, a movably arranged catch that is in an arresting engagement with the rotary member when the rotary member is in the closing rotational position, and a locking assembly that includes a movable locking member movable between an unlocking position and a locking position. The arresting engagement is releasable by an overlifting rotational movement of the rotary member. The rotary member is rotationally movable between a closing rotational position and a release rotational position and is spring-biased in the direction towards the release rotational position. The locking member, when transferred from the unlocking position into the opening position, causes the arresting engagement of the catch with the rotary member to be released.

Abstract: Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: The disclosure relates to a control method for controlling at least one injector valve in a fuel injection system of an internal combustion engine. An opening time of the injector valve is selected such that, in a fault situation in the fuel injection system, an opening time of the injector valve is situated in a pressure valley of a pressure oscillation prevailing in a high-pressure region of the fuel injection system.

Abstract: The present disclosure generally relates to methods of selectively forming titanium silicides on substrates. The methods are generally utilized in conjunction with contact structure integration schemes. In one embodiment, a titanium silicide material is selectively formed on a substrate as an interfacial layer on a source/drain region. The titanium silicide layer may be formed at a temperature within range of about 400 degrees Celsius to about 500 degrees Celsius.

Abstract: Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion includes a first plurality of channels and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.

Abstract: Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.

Abstract: A fluidic actuator for influencing a flow of a surrounding fluid along a flow surface has a blowing duct for connecting to a pressurized-fluid source, and has a surface blowing opening formed in the flow surface, and a suction duct for connecting to a surface suction opening formed in the flow surface, wherein the suction duct flows into the blowing duct at an entrainment opening.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: A domestic electrical appliance, in particular a dishwashing machine, includes a main appliance body having a product treatment chamber, a door mounted on the main appliance body so as to be pivotable about a horizontal pivot axis close to the floor for closing an access opening to the product treatment chamber and a locking device having a locking assembly arranged on the main appliance body and a closing pin arranged on the door. The locking assembly has a latch movable between a release position and a latching position where the latch engages behind the closing pin to hold the door closed and releases the closing pin to open the door. The latch performs a rotational movement along a horizontal plane as it moves between the release position and the latching position, the closing pin being oriented vertically when the door is closed.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: A dispensing device for introducing a pourable detergent in metered amounts into a treatment chamber of a program-controlled cleaning appliance includes a housing provided with a loading aperture; a carrier unit rotatably mounted in the housing and accessible via the loading aperture and which serves to replaceably receive a supply container for holding the detergent; and a housing cover providing fluid-tight closure of the loading aperture. The housing cover includes a cover member providing the fluid-tight closure of the loading aperture and a locking member movably attached to the cover member, the locking member including a plurality of locking elements, each cooperating with a respective locking finger disposed on the housing.

Abstract: A method for generating fluid pulses is provided. The device comprises a first channel with a first fluid inlet and a second channel with a second fluid inlet, in which the first fluid inlet and second fluid inlet are substantially situated opposite each other. The first channel comprises a first control outlet at the height of the first fluid inlet, and the second channel comprises a second control outlet at the height of the second fluid inlet, in which the respective control outlet is located in front of the respective fluid inlet in relation to the inflowing direction of the fluid inlet.

Abstract: The invention relates to fluid actuator for influencing the flow along a flow surface through ejection of a fluid. By means of a like fluid actuator, a continuous flow is distributed to at least two outlet openings in order to generate fluid pulses out of these outlet openings. Control of this distribution takes place inside an interaction chamber which is supplied with fluid flow via a feed line. Into this interaction chamber there merge at least two control lines via control openings to which a respective different pressure may be applied. Depending on the pressure difference at the control openings, the flow in the interaction chamber is distributed to the individual outlet openings.

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

Abstract: Methods for operating real-time wireless networks enable robust medium access strategies for communicating nodes in the network. A given wireless channel is divided into several sub-carriers, with each node assigned to a subset of sub-carriers. A master wireless node uses different subsets of the sub-carriers to communication with two or more slave wireless nodes simultaneously. The method includes generation of preambles that are robust to interference and multipath conditions. The method also enables communication within a maximum predetermined latency bound.

Abstract: A flow body having a surface, a leading edge has an active flow control system. The active flow control system includes a plurality of openings, at least one control pressure varying device and at least one fluidic actuator with an interaction chamber having an inlet connectable to an air source, at least two outlets and at least two control pressure ports. The openings are distributed along or parallel to the leading edge in a side-by-side relationship and extend through the surface. The control pressure varying device is connected to the at least two control pressure ports in a fluidic manner, wherein the control pressure varying device is adapted to bring about the flow of the fluid at least majoritarily into a respective one of the outlets. Each of the outlets is connected to one individual opening of the plurality of openings.

Abstract: Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove non-epitaxial material while deposited epitaxial material builds up cycle-by-cycle. Quality of the epitaxial material improves relative to selective processes where no deposition occurs on insulators. Use of a germanium catalyst during the etch phases of the process aid etch rates and facilitate economical maintenance of isothermal and/or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material over the insulating regions and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase.